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    SI4931DY Price and Stock

    Vishay Siliconix SI4931DY-T1-GE3

    MOSFET 2P-CH 12V 6.7A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4931DY-T1-GE3 Reel 7,500 2,500
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    SI4931DY-T1-GE3 Cut Tape 360 1
    • 1 $1.18
    • 10 $0.966
    • 100 $0.7517
    • 1000 $0.51902
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    SI4931DY-T1-GE3 Digi-Reel 1
    • 1 $1.18
    • 10 $0.966
    • 100 $0.7517
    • 1000 $0.51902
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    New Advantage Corporation SI4931DY-T1-GE3 10,000 1
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    Vishay Siliconix SI4931DY-T1-E3

    MOSFET 2P-CH 12V 6.7A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4931DY-T1-E3 Reel 2,500 2,500
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    SI4931DY-T1-E3 Cut Tape 1,974 1
    • 1 $1.18
    • 10 $0.966
    • 100 $0.7517
    • 1000 $0.51902
    • 10000 $0.51902
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    SI4931DY-T1-E3 Digi-Reel 1
    • 1 $1.18
    • 10 $0.966
    • 100 $0.7517
    • 1000 $0.51902
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    Vishay Intertechnologies SI4931DY-T1-GE3

    Transistor MOSFET Array Dual P-CH 12V 6.7A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4931DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4931DY-T1-GE3 Reel 13 Weeks 2,500
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    Mouser Electronics SI4931DY-T1-GE3 2,805
    • 1 $1.09
    • 10 $0.91
    • 100 $0.789
    • 1000 $0.789
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    Verical SI4931DY-T1-GE3 2,500 2,500
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    SI4931DY-T1-GE3 1,753 10
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    • 10 $0.6605
    • 100 $0.6528
    • 1000 $0.6412
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    Arrow Electronics SI4931DY-T1-GE3 Cut Strips 1,753 13 Weeks 1
    • 1 $0.6644
    • 10 $0.6605
    • 100 $0.6528
    • 1000 $0.6412
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    Newark SI4931DY-T1-GE3 Reel 2,500
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    TTI SI4931DY-T1-GE3 Reel 20,000 2,500
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    Avnet Asia SI4931DY-T1-GE3 15 Weeks 2,500
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    Chip1Stop SI4931DY-T1-GE3 1,753
    • 1 $1.11
    • 10 $0.761
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    EBV Elektronik SI4931DY-T1-GE3 14 Weeks 2,500
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    Vishay Intertechnologies SI4931DY-T1-E3

    Transistor MOSFET Array Dual P-CH 12V 6.7A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4931DY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4931DY-T1-E3 Reel 2,500
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    • 10000 $0.6489
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    Verical SI4931DY-T1-E3 2,447 47
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    • 1000 $0.67
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    Arrow Electronics SI4931DY-T1-E3 Cut Strips 3 9 Weeks 1
    • 1 $0.5882
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    Bristol Electronics SI4931DY-T1-E3 24
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    TTI SI4931DY-T1-E3 Reel 2,500
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    Avnet Asia SI4931DY-T1-E3 2,500
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    Chip1Stop SI4931DY-T1-E3 Cut Tape 2,447
    • 1 $0.537
    • 10 $0.536
    • 100 $0.532
    • 1000 $0.528
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    EBV Elektronik SI4931DY-T1-E3 10 Weeks 2,500
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    Vishay Intertechnologies SI4931DYT1GE3

    DUAL P-CHANNEL 12-V (D-S) MOSFET Small Signal Field-Effect Transistor, 6.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4931DYT1GE3 310
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    SI4931DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI4931DY-E3 Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF
    Si4931DY SPICE Device Model Vishay Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI4931DY-T1 Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI4931DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 6.7A 8-SOIC Original PDF
    SI4931DY-T1-E3 Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI4931DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 6.7A 8SOIC Original PDF

    SI4931DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4931DY 2002/95/EC Si4931DY-T1-E3 Si4931DY-T1-GE3 11-Mar-11

    Si4931DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4931DY S-52446Rev. 28-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4931DY 2002/96/EC Si4931DY-T1-E3 Si4931DY-T1-GE3 18-Jul-08

    Si4931DY

    Abstract: Si4931DY-T1
    Text: Si4931DY Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = −4.5 V −8.9 APPLICATIONS 0.022 @ VGS = −2.5 V


    Original     		PDF Si4931DY Si4931DY--E3 Si4931DY-T1--E3 08-Apr-05 Si4931DY-T1

    31915

    Abstract: No abstract text available
    Text: Si4931DY Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = - 4.5 V - 8.9 APPLICATIONS 0.022 @ VGS = - 2.5 V - 8.1


    Original     		PDF Si4931DY Si4931DY-T1 S-31915--Rev. 15-JSep03 31915

    AN609

    Abstract: Si4931DY 27352
    Text: Si4931DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4931DY AN609 19-Mar-07 27352

    Untitled

    Abstract: No abstract text available
    Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4931DY 2002/95/EC Si4931DY-T1-E3 Si4931DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4931DY

    Abstract: Si4931DY-T1-E3
    Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4931DY 2002/95/EC Si4931DY-T1-E3 Si4931DY-T1-GE3 18-Jul-08

    Si4931DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4931DY 18-Jul-08

    Si4931DY

    Abstract: Si4931DY-T1-E3
    Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4931DY 2002/95/EC Si4931DY-T1-E3 Si4931DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4931DY 2002/95/EC Si4931DY-T1-E3 Si4931DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4931DY Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = −4.5 V −8.9 APPLICATIONS 0.022 @ VGS = −2.5 V


    Original     		PDF Si4931DY Si4931DY--E3 Si4931DY-T1--E3 18-Jul-08

    SI4931DY-T1-E3

    Abstract: Si4931DY Si4931DY-T1
    Text: Si4931DY Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = −4.5 V −8.9 APPLICATIONS 0.022 @ VGS = −2.5 V


    Original     		PDF Si4931DY Si4931DY--E3 Si4931DY-T1--E3 S-32411--Rev. 24-Nov-03 SI4931DY-T1-E3 Si4931DY-T1

    Si4931DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4931DY 29-Sep-03

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    LTC4417GN

    Abstract: LTC3690 cvs3 power v1 v2 v3 uv1 uv2 uv3 valid1 valid2 valid3 LTC4417 LTC4417IUF Si4909DY FDS6675BNZ LTC4417HGN UV3 marking
    Text: LTC4417 Prioritized PowerPath Controller Description Features Selects Highest Priority Supply from Three Inputs n Blocks Reverse and Cross Conduction Currents n Wide Operating Voltage Range: 2.5V to 36V n –42V Protection Against Reverse Battery Connection


    Original     		PDF 24-Lead LTC4417 OT-23 MSOP-16 DFN-16 SO-16, DFN-14 TSSOP-20 LTC4417GN LTC3690 cvs3 power v1 v2 v3 uv1 uv2 uv3 valid1 valid2 valid3 LTC4417IUF Si4909DY FDS6675BNZ LTC4417HGN UV3 marking