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    SI4874 Price and Stock

    Vishay Siliconix SI4874BDY-T1-E3

    MOSFET N-CH 30V 12A 8SO
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    DigiKey SI4874BDY-T1-E3 Digi-Reel 7,025 1
    • 1 $1.34
    • 10 $1.099
    • 100 $1.34
    • 1000 $0.59005
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    SI4874BDY-T1-E3 Cut Tape 7,025 1
    • 1 $1.34
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    SI4874BDY-T1-E3 Reel 2,500 2,500
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    RS SI4874BDY-T1-E3 Bulk 2,500
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    • 10000 $1.35
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    Vishay Siliconix SI4874BDY-T1-GE3

    MOSFET N-CH 30V 12A 8SO
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    DigiKey SI4874BDY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4874BDY-T1-GE3

    Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4874BDY-T1-GE3)
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    Avnet Americas SI4874BDY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4874BDY-T1-GE3
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    Newark SI4874BDY-T1-GE3 Reel 2,500
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    SI4874BDY-T1-GE3 Cut Tape 2,500
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    Bristol Electronics SI4874BDY-T1-GE3 2,500
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    Quest Components SI4874BDY-T1-GE3 2,000
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    TTI SI4874BDY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4874BDY-T1-E3

    Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4874BDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4874BDY-T1-E3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4874BDY-T1-E3 3,406
    • 1 $0.96
    • 10 $0.958
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    Verical SI4874BDY-T1-E3 1,660 59
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    SI4874BDY-T1-E3 313 13
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    Arrow Electronics SI4874BDY-T1-E3 Cut Strips 313 17 Weeks 1
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    Newark SI4874BDY-T1-E3 Cut Tape 2,500
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    Bristol Electronics SI4874BDY-T1-E3 2,225
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    Quest Components SI4874BDY-T1-E3 1,678
    • 1 $1.7065
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    • 1000 $0.6826
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    TTI SI4874BDY-T1-E3 Reel 2,500
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    Chip1Stop SI4874BDY-T1-E3 Cut Tape 1,660
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    SI4874BDY-T1-E3 313
    • 1 $0.805
    • 10 $0.575
    • 100 $0.508
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    EBV Elektronik SI4874BDY-T1-E3 18 Weeks 2,500
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    Vishay Intertechnologies SI4874DY-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4874DY-T1 3,514
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    Quest Components SI4874DY-T1 2,811
    • 1 $3.84
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    • 1000 $1.44
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    SI4874DY-T1 1,392
    • 1 $13.77
    • 10 $13.77
    • 100 $13.77
    • 1000 $6.885
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    SI4874DY-T1 400
    • 1 $3.84
    • 10 $3.84
    • 100 $3.84
    • 1000 $1.584
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    Component Electronics, Inc SI4874DY-T1 66
    • 1 $1.54
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    SI4874 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4874BDY Vishay Siliconix Specification Comparison Original PDF
    Si4874BDY Vishay Telefunken N-channel 30-v Mosfet Original PDF
    SI4874BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC Original PDF
    SI4874BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC Original PDF
    SI4874DY Fairchild Semiconductor Single N-Channel, Logic Level, PowerTrench MOSFET Original PDF
    SI4874DY Unknown N-Channel Reduced Qg , Fast Switching MOSFET Original PDF
    SI4874DY Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    Si4874DY Vishay Telefunken N-Channel 30-V MOSFET Original PDF
    Si4874DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4874DY-T1 Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF

    SI4874 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4874BDY

    Abstract: SI4874BDY-E3
    Text: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View


    Original     		PDF Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 08-Apr-05 SI4874BDY-E3

    SI4874BDY

    Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1 V4140
    Text: Specification Comparison Vishay Siliconix Si4874BDY vs. Si4874DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4874BDY-T1-E3 Replaces Si4874DY-T1-E3 Si4874BDY-T1-E3 Replaces Si4874DY-T1 Summary of Performance:


    Original     		PDF Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874DY-T1 V4140

    Untitled

    Abstract: No abstract text available
    Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 11-Mar-11

    Si4874DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		PDF Si4874DY 18-Jul-08

    Si4874DY

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY 18-Jul-08

    Si4874BDY

    Abstract: No abstract text available
    Text: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View


    Original     		PDF Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 S-41508--Rev. 09-Aug-04

    Si4874BDY

    Abstract: Si4874BDY-T1-E3
    Text: New Product Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3


    Original     		PDF Si4874BDY Si4874BDY-T1-E3 08-Apr-05

    Si4874DY

    Abstract: s9904
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY S99-040--Rev. 04-Oct-99 s9904

    Untitled

    Abstract: No abstract text available
    Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4874DY

    Abstract: 71469
    Text: SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4874DY 17-Apr-01 71469

    40685

    Abstract: A 69234 AN609 Si4874BDY
    Text: Si4874BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4874BDY AN609 26-Jul-07 40685 A 69234

    Si4874BDY

    Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1
    Text: Specification Comparison Vishay Siliconix Si4874BDY vs. Si4874DY Description: N-Channel, 30 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4874BDY-T1-E3 Replaces Si4874DY-T1-E3 Si4874BDY-T1 Replaces Si4874DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874BDY-T1 Si4874DY-T1

    Si4874DY

    Abstract: SOIC-16
    Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF Si4874DY SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF Si4874DY OT-23

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3


    Original     		PDF Si4874BDY Si4874BDY-T1-E3 18-Jul-08

    Si4874BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4874BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4874BDY S-60245Rev. 20-Feb-06

    Untitled

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY S99-040--Rev. 04-Oct-99

    SI4874BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4874BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4874BDY 18-Jul-08

    Si4874BDY

    Abstract: Si4874BDY-T1-E3 Si4874BDY-T1-GE3
    Text: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY S-61803--Rev. 21-Jun-99

    Untitled

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC


    Original     		PDF Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive


    Original     		PDF Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12