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    Vishay Siliconix SI4890DY-T1-E3

    MOSFET N-CH 30V 11A 8-SOIC
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    DigiKey SI4890DY-T1-E3 Reel 2,500 2,500
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    • 10000 $1.1875
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    Skyworks Solutions Inc SI4831-B31-GU

    RF RCVR AM/FM 24SSOP
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    DigiKey SI4831-B31-GU Tube 191 1
    • 1 $4.04
    • 10 $3.611
    • 100 $4.04
    • 1000 $2.39754
    • 10000 $1.84148
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    Richardson RFPD SI4831-B31-GU 1
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    Skyworks Solutions Inc SI4835-B30-GU

    RF RX AM/FM 504KHZ-1.75MHZ SSOP
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    DigiKey SI4835-B30-GU Tube 85 1
    • 1 $4.8
    • 10 $3.664
    • 100 $4.8
    • 1000 $2.54308
    • 10000 $2.41953
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    Richardson RFPD SI4835-B30-GU 1
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    Altran Magetics ASR-SI480D40ZW-L

    SSR RELAY SPST-NO 40A 48-530V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASR-SI480D40ZW-L Box 20 1
    • 1 $33.51
    • 10 $31.836
    • 100 $26.8094
    • 1000 $25.13384
    • 10000 $25.13384
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    Altran Magetics ASR-SI480A25RY-LV

    SSR RELAY SPST-NO 25A 48-530V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASR-SI480A25RY-LV Box 19 1
    • 1 $28.28
    • 10 $26.866
    • 100 $22.624
    • 1000 $19.796
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    Find more SI48 price and stock on Findchips.com

    SI48 Datasheets (415)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4800 NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    Si4800 Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    SI4800 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    SI4800,518 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A SOT96-1 Original PDF
    SI4800BDY Vishay Siliconix MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.3W; Resistance, Rds on:0.0185R; SMD:1; Charge, gate p Original PDF
    SI4800BDY Vishay Siliconix MOSFETs Original PDF
    Si4800BDY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4800BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC Original PDF
    SI4800BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC Original PDF
    Si4800DY Vishay Intertechnology N-Channel Reducded Q g , Fast Switching MOSFET Original PDF
    SI4800DY Vishay Telefunken N-Channel 30-V (D-S) MOSFET Original PDF
    Si4800DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4800DY-T1 Vishay Intertechnology N-Channel Reducded Q g , Fast Switching MOSFET Original PDF
    Si4802DY Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    Si4802DY Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4802DY Vishay Siliconix MOSFETs Original PDF
    SI4802DY-T1 Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4804BDY Vishay Siliconix MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1; Original PDF
    Si4804BDY Vishay Siliconix Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison Original PDF
    SI4804BDY Vishay Siliconix MOSFETs Original PDF
    ...

    SI48 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4850EY-t1g

    Abstract: si4850
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4850EY-t1g si4850

    si4838

    Abstract: No abstract text available
    Text: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si4838DY Si4838DY-T1-E3 Si4838DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4838

    Si4842DY

    Abstract: S-02445
    Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4842DY S-02445--Rev. 06-Nov-00 S-02445

    2sc9018

    Abstract: No abstract text available
    Text: AN738 Si4825/36-A A NTENNA , S CHEMATIC , L AYOUT AND D E S I G N G UIDEL INES 1. Introduction This document provides general Si4825/36-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM and PCB layout. All users should follow the Si4825/36-A design guidelines presented in Section 2


    Original     		PDF AN738 Si4825/36-A Si4825 Si4836 2sc9018

    Si4816BDY

    Abstract: Si4816BDY-T1-E3
    Text: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V


    Original     		PDF Si4816BDY 08-Apr-05 Si4816BDY-T1-E3

    Si4866DY

    Abstract: Si4866DY-T1-E3
    Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 11-Mar-11

    Si4800BDY-T1-E3

    Abstract: Si4800BDY Si4800BDY-T1-GE3
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 11-Mar-11

    Si4816DY

    Abstract: Si4816DY-T1-E3
    Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4816DY 2002/95/EC 11-Mar-11 Si4816DY-T1-E3

    Si4888DY

    Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4888DY Si4888DY-T1-E3 Si4888DY-T1-GE3 11-Mar-11

    Si4840DY

    Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050
    Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 11-Mar-11 US2050

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4804DY Dual N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4804DY

    si4829

    Abstract: No abstract text available
    Text: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4829DY 2002/95/EC Si4829DY-T1-E3 18-Jul-08 si4829

    SI4823DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4823DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4862DY

    Abstract: No abstract text available
    Text: Si4862DY New Product Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.3-mW rDS(on) D Low Gate Resistance PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) ID (A) 0.0033 @ VGS = 4.5 V 25 0.0055 @ VGS = 2.5 V 20 APPLICATIONS


    Original     		PDF Si4862DY S-03596--Rev. 07-May-01

    Si4804CDY

    Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si4804CDY vs. Si4804BDY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3 Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3


    Original     		PDF Si4804CDY Si4804BDY Si4804CDY-T1-GE3 Si4804BDY-T1-E3 20-Jul-09

    Si4818DY

    Abstract: No abstract text available
    Text: Si4818DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V 8.2 SCHOTTKY PRODUCT SUMMARY


    Original     		PDF Si4818DY S-00042--Rev. 24-Jan-00

    71142 a

    Abstract: 71142 D Si4886DY
    Text: Si4886DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 13 0.0135 @ VGS = 4.5 V 11 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4886DY 08-Apr-05 71142 a 71142 D

    S99-041

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original     		PDF Si4884DY S99-041--Rev. 04-Oct-99 S99-041

    Untitled

    Abstract: No abstract text available
    Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A


    Original     		PDF Si4810DY S-56946--Rev. 23-Nov-98

    Si4866BDY

    Abstract: 71342
    Text: New Product Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 VDS (V) 12 Qg (Typ) 29.5 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4866BDY Si4866BDY-T1-E3 08-Apr-05 71342

    si4833a

    Abstract: SI4833ADY
    Text: Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A)a 0.072 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 Qg (Typ) • LITTLE FOOT Plus Power MOSFET RoHS - 4.6 COMPLIANT


    Original     		PDF Si4833ADY Si4833ADY-T1-E3 S-60428-Rev. 20-Mar-06 si4833a

    Si4884DY

    Abstract: Si4884DY-T1
    Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY


    Original     		PDF Si4884DY Si4884DY-T1 08-Apr-05