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Vishay Intertechnologies SI4842DY-T1
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Bristol Electronics	SI4842DY-T1		19,382			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4842DY-T1		2,500			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4842DY
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Bristol Electronics	SI4842DY		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4842DY-T1-E3 15000 MA, 30 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, LEAD FREE
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Quest Components	SI4842DY-T1-E3		932			1 $3.3 10 $3.3 100 $3.3 1000 $1.32 10000 $1.32	Buy Now
Vishay Siliconix SI4842DY TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,15A I(D),SO
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Quest Components	SI4842DY		93			1 $4.2 10 $2.1 100 $2.1 1000 $2.1 10000 $2.1	Buy Now
ComSIT USA	SI4842DY		18			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others SI4842DY INSTOCK
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Chip 1 Exchange	SI4842DY		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4842DY Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4842DY	Vishay	IC FPS7760A NCHANNEL SO8 MOSFET	Original	PDF
Si4842DY	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4842DY	Vishay Siliconix	MOSFETs	Original	PDF
SI4842DY	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4842DY SPICE Device Model	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4842DY-T1	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF

SI4842DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4842DY Abstract: S-02445 Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4842DY S-02445--Rev. 06-Nov-00 S-02445	PDF
Si4842BDY Abstract: Si4842DY Si4842DY-T1-E3 Si4842BDY-T1-E3 Si4842DY-T1 Text: Specification Comparison Vishay Siliconix Si4842BDY vs. Si4842DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4842BDY-T1-E3 Replaces Si4842DY-T1-E3 Si4842BDY-T1-E3 Replaces Si4842DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4842BDY Si4842DY Si4842BDY-T1-E3 Si4842DY-T1-E3 Si4842DY-T1 06-Nov-06	PDF
Si4842DY Abstract: Si4842DY-T1 Si4842DY-T1-E3 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY	Original	Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 18-Jul-08	PDF
Si4842DY Abstract: No abstract text available Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4842DY S-03662--Rev. 14-Apr-03	PDF
Si4842DY Abstract: No abstract text available Text: SPICE Device Model Si4842DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	Si4842DY sub-circu10	PDF
S-41576-Rev Abstract: Si4842DY Si4842DY-T1 Si4842DY-T1-E3 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY	Original	Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 08-Apr-05 S-41576-Rev	PDF
Si4842DY Abstract: NC1036 71482 Text: \\\ SPICE Device Model Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4842DY 0-to-10V 19-Feb-02 NC1036 71482	PDF
Si4842DY-T1-E3 Abstract: Si4842DY Si4842DY-T1 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY	Original	Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 S-41576--Rev. 23-Aug-04	PDF
AN609 Abstract: Si4842DY Text: Si4842DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4842DY AN609 02-Mar-06	PDF
Si4842DY Abstract: Si4842DY-T1 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4842DY	Original	Si4842DY Si4842DY-T1 S-31726--Rev. 18-Aug-03	PDF
fr9220 Abstract: DPA426 Text: DPA423-426 DPA-Switch Family Highly Integrated DC-DC Converter ICs for Distributed Power Architectures Product Highlights VO Highly Integrated Solution • Eliminates 20-50 external components–saves space, cost • Integrates 200 V high frequency MOSFET, PWM control	Original	DPA423-426 stan00 17F-3, fr9220 DPA426	PDF
CT7343 Abstract: m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN" Text: SC4810B/E High Performance Current Mode PWM Controller with Complementary Output, Programmable Delay POWER MANAGEMENT Description Features The SC4810B/E is a 16 pin BICMOS primary side PWM controller for use in Isolated DC-DC and off-line switching	Original	SC4810B/E SC4810B/E MLPQ-16, CT7343 m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN"	PDF
R0805 Abstract: mosfet 4456 sot23-123 Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and	Original	SC4910A/B MO-153, TSSOP-20 R0805 mosfet 4456 sot23-123	PDF
CT7343 Abstract: pa016 SC1302 Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and	Original	SC4910A/B features302A SC4911 TSSOP-20 SC4910A/B TSSOP-20 CT7343 pa016 SC1302	PDF

LX1671 Abstract: LX1673 Si4842DY fet cross reference 5a2 zener diode Text: LX1673 PRODUCT DESIGN GUIDE AN20 LX1673 PR0DUCT DESIGN GUIDE I N T E G R A T E D Copyright  2000 Rev. 0.2, 2002-09-12 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1673	Original	LX1673 LX1673 LX1671 Si4842DY fet cross reference 5a2 zener diode	PDF
71917 Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller	Original	AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds	PDF
170M Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK	Original		PDF
5a6 zener diode Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical	Original	Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415	PDF
mosfet 4456 Abstract: R0805 C31 MARKING CODE SO8 CT7343 4456 so8 SC4910A SC4201 1N4148WS SC4910AITSTRT SC4910B Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and	Original	SC4910A/B SC4910A/B MO-153, TSSOP-20 mosfet 4456 R0805 C31 MARKING CODE SO8 CT7343 4456 so8 SC4910A SC4201 1N4148WS SC4910AITSTRT SC4910B	PDF
AMD64 Abstract: LX1677 LX1677-CLQ LX1677-CLQT LX1677-CPW Text: LX1677 I N T E G R A T E D AMD64 Processor VRM Controller P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION maximizing regulator response. A true differential input amplifier is used for remote voltage sensing at the processor core. A VID code generator provides an	Original	LX1677 AMD64 LX1677 LX1677-CLQ LX1677-CLQT LX1677-CPW	PDF
C0603C102K8RAC Abstract: IRF7811W IRF7822 JMK325BJ226MN LMK316BJ475ML LMK325BJ106MN MAX1954 kemet capacitor 1nF 0603 capacitor 1nF 0603 N4 SOT23 Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Nov 11, 2002 Keywords: graphics chip, high current, Nvidea, ATI, processor power APPLICATION NOTE 1781 Graphics Chip Supply Delivers 1.65V at 26A Abstract: Game boxes are using more powerful processors to provide more realistic and complex graphics and	Original	MAX1954 300kHz 100nC MAX1954EUB com/an1781 MAX1954: AN1781, APP1781, Appnote1781, C0603C102K8RAC IRF7811W IRF7822 JMK325BJ226MN LMK316BJ475ML LMK325BJ106MN kemet capacitor 1nF 0603 capacitor 1nF 0603 N4 SOT23	PDF
CT7343 Abstract: R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features K K K K K K K K K K K K The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and	Original	SC4910A/B SC4910A/B 8208T 31414R TPS2829 TPS2829DBVR" TSSOP-20 SC4911 CT7343 R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A	PDF
5a2 zener diode Abstract: AN19 LX1671 LX1672 Si4842DY Text: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	LX1672 LX1672 5a2 zener diode AN19 LX1671 Si4842DY	PDF
mosfet 4456 Abstract: p94a marking U6 SOD123 GRM55RR Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and	Original	SC4910A/B features302A SC4911 TSSOP-20 SC4910A/B TSSOP-20 mosfet 4456 p94a marking U6 SOD123 GRM55RR	PDF

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SI4842DY Search Results

SI4842DY Price and Stock

Vishay Intertechnologies SI4842DY-T1

Vishay Intertechnologies SI4842DY

Vishay Siliconix SI4842DY-T1-E3

Vishay Siliconix SI4842DY

Others SI4842DY

SI4842DY Datasheets (6)

SI4842DY Datasheets Context Search

Si4842DY

Si4842BDY

Si4842DY

Si4842DY

Si4842DY

S-41576-Rev

Si4842DY

Si4842DY-T1-E3

AN609

Si4842DY

fr9220

CT7343

R0805

CT7343

LX1671

71917

170M

5a6 zener diode

mosfet 4456

AMD64

C0603C102K8RAC

CT7343

5a2 zener diode

mosfet 4456