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    SI4447ADY Search Results

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    SI4447ADY Price and Stock

    Vishay Siliconix SI4447ADY-T1-GE3

    MOSFET P-CH 40V 7.2A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4447ADY-T1-GE3 Reel 7,500 2,500
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    • 10000 $0.20452
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    SI4447ADY-T1-GE3 Cut Tape 4,653 1
    • 1 $0.57
    • 10 $0.492
    • 100 $0.3409
    • 1000 $0.2424
    • 10000 $0.2424
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    SI4447ADY-T1-GE3 Digi-Reel 1
    • 1 $0.57
    • 10 $0.492
    • 100 $0.3409
    • 1000 $0.2424
    • 10000 $0.2424
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    RS SI4447ADY-T1-GE3 Bulk 2,500
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    • 10000 $0.567
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    New Advantage Corporation SI4447ADY-T1-GE3 5,000 1
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    Vishay Intertechnologies SI4447ADY-T1-GE3

    P-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI4447ADY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4447ADY-T1-GE3 Reel 27,500 19 Weeks 2,500
    • 1 -
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    • 10000 $0.17775
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    SI4447ADY-T1-GE3 Ammo Pack 17 Weeks 1
    • 1 $0.604
    • 10 $0.543
    • 100 $0.384
    • 1000 $0.384
    • 10000 $0.384
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    SI4447ADY-T1-GE3 Ammo Pack 7 Weeks, 3 Days 1
    • 1 $0.56
    • 10 $0.499
    • 100 $0.34
    • 1000 $0.34
    • 10000 $0.34
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    SI4447ADY-T1-GE3 Reel 2,500
    • 1 -
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    • 10000 $0.18413
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    Mouser Electronics SI4447ADY-T1-GE3 27,519
    • 1 $0.57
    • 10 $0.485
    • 100 $0.341
    • 1000 $0.243
    • 10000 $0.189
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    Verical SI4447ADY-T1-GE3 2,500 2,500
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    Arrow Electronics SI4447ADY-T1-GE3 2,500 19 Weeks 2,500
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    Newark SI4447ADY-T1-GE3 Cut Tape 8,711 1
    • 1 $0.331
    • 10 $0.331
    • 100 $0.303
    • 1000 $0.303
    • 10000 $0.303
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    SI4447ADY-T1-GE3 Cut Tape 2,500 1
    • 1 $0.177
    • 10 $0.177
    • 100 $0.177
    • 1000 $0.177
    • 10000 $0.177
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    SI4447ADY-T1-GE3 Reel 2,500
    • 1 $0.264
    • 10 $0.264
    • 100 $0.264
    • 1000 $0.264
    • 10000 $0.239
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    Bristol Electronics SI4447ADY-T1-GE3 9,940
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    Quest Components SI4447ADY-T1-GE3 2,000
    • 1 $1.405
    • 10 $1.405
    • 100 $1.405
    • 1000 $0.562
    • 10000 $0.4918
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    TTI SI4447ADY-T1-GE3 Reel 25,000 2,500
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    • 10000 $0.187
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    TME SI4447ADY-T1-GE3 2,224 1
    • 1 $0.539
    • 10 $0.453
    • 100 $0.377
    • 1000 $0.302
    • 10000 $0.281
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    Avnet Asia SI4447ADY-T1-GE3 20 Weeks 2,500
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    • 10000 $0.29096
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    Chip1Stop SI4447ADY-T1-GE3 2,500
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    • 10000 $0.246
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    EBV Elektronik SI4447ADY-T1-GE3 19 Weeks 2,500
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    Vishay Intertechnologies SI4447ADY-T1-GE3.

    Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:4.2W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI4447ADY-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4447ADY-T1-GE3. Reel 2,500
    • 1 $0.178
    • 10 $0.178
    • 100 $0.178
    • 1000 $0.178
    • 10000 $0.178
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    Vishay Huntington SI4447ADY-T1-GE3

    MOSFET P-CH 40V 7.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4447ADY-T1-GE3 62,400
    • 1 -
    • 10 -
    • 100 $2.022
    • 1000 $1.696
    • 10000 $1.696
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    SI4447ADY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4447ADY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 7.2A 8SOIC Original PDF

    SI4447ADY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4447ADY www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4447ADY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4447

    Abstract: 78523
    Text: Si4447ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4447ADY AN609, 2022u 3033m 1758m 6182u 9154m 1324m 2158m Si4447 78523

    Si4447

    Abstract: Si4447ADY
    Text: SPICE Device Model Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4447ADY 18-Jul-08 Si4447

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 11-Mar-11

    si4447ady

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836