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    SI4447ADY Search Results

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    SI4447ADY Price and Stock

    Vishay Siliconix SI4447ADY-T1-GE3

    MOSFET P-CH 40V 7.2A 8SO
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    DigiKey SI4447ADY-T1-GE3 Digi-Reel 4,981 1
    • 1 $0.95
    • 10 $0.594
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    • 1000 $0.26866
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    SI4447ADY-T1-GE3 Cut Tape 4,981 1
    • 1 $0.95
    • 10 $0.594
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    • 1000 $0.26866
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    SI4447ADY-T1-GE3 Reel 2,500
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    RS SI4447ADY-T1-GE3 Bulk 2,500
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    New Advantage Corporation SI4447ADY-T1-GE3 10,000 1
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    Vishay Intertechnologies SI4447ADY-T1-GE3

    P-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI4447ADY-T1-GE3)
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    Avnet Americas SI4447ADY-T1-GE3 Reel 27,500 16 Weeks 2,500
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    SI4447ADY-T1-GE3 Ammo Pack 17 Weeks 1
    • 1 $0.753
    • 10 $0.601
    • 100 $0.43
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    SI4447ADY-T1-GE3 Ammo Pack 7 Weeks, 3 Days 1
    • 1 $0.71
    • 10 $0.558
    • 100 $0.387
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    Mouser Electronics SI4447ADY-T1-GE3 28,815
    • 1 $0.79
    • 10 $0.527
    • 100 $0.387
    • 1000 $0.269
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    Newark SI4447ADY-T1-GE3 Cut Tape 8,711 1
    • 1 $0.315
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    • 100 $0.289
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    SI4447ADY-T1-GE3 Cut Tape 2,500 1
    • 1 $0.177
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    SI4447ADY-T1-GE3 Reel 1
    • 1 $0.264
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    • 10000 $0.239
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    Bristol Electronics SI4447ADY-T1-GE3 9,940
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    Quest Components SI4447ADY-T1-GE3 2,000
    • 1 $1.405
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    • 100 $1.405
    • 1000 $0.562
    • 10000 $0.4918
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    TTI SI4447ADY-T1-GE3 Reel 20,000 2,500
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    TME SI4447ADY-T1-GE3 2,208 1
    • 1 $0.507
    • 10 $0.426
    • 100 $0.354
    • 1000 $0.284
    • 10000 $0.264
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    Avnet Asia SI4447ADY-T1-GE3 19 Weeks 2,500
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    EBV Elektronik SI4447ADY-T1-GE3 17 Weeks 2,500
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    Vishay Intertechnologies SI4447ADY-T1-GE3.

    Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:4.2W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI4447ADY-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4447ADY-T1-GE3. Reel 2,500
    • 1 $0.178
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    Vishay Huntington SI4447ADY-T1-GE3

    MOSFET P-CH 40V 7.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4447ADY-T1-GE3 62,400
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    • 10000 $0.1886
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    SI4447ADY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4447ADY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 7.2A 8SOIC Original PDF

    SI4447ADY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4447ADY www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4447ADY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4447

    Abstract: 78523
    Text: Si4447ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    Si4447ADY AN609, 2022u 3033m 1758m 6182u 9154m 1324m 2158m Si4447 78523 PDF

    Si4447

    Abstract: Si4447ADY
    Text: SPICE Device Model Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4447ADY 18-Jul-08 Si4447 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 11-Mar-11 PDF

    si4447ady

    Abstract: No abstract text available
    Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF