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    SI4430 Price and Stock

    Silicon Laboratories Inc SI4430-B1-FM

    IC RF TXRX ISM<1GHZ 20QFN
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    DigiKey SI4430-B1-FM Tube 21 1
    • 1 $10.86
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    Mouser Electronics SI4430-B1-FM
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    Newark SI4430-B1-FM Bulk 1
    • 1 $7.97
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    Symmetry Electronics SI4430-B1-FM 1
    • 1 $6.89
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    Silicon Laboratories Inc SI4430-A0-FM

    IC RF TXRX ISM<1GHZ 20QFN
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    DigiKey SI4430-A0-FM Tube
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    Symmetry Electronics SI4430-A0-FM 1
    • 1 $4.41
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    Silicon Laboratories Inc SI4430-B1-FMR

    IC RF TXRX ISM<1GHZ 20QFN
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    DigiKey SI4430-B1-FMR Reel 2,500
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    Mouser Electronics SI4430-B1-FMR
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    Symmetry Electronics SI4430-B1-FMR 1
    • 1 $6.89
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    Silicon Laboratories Inc SI4430-A0-FMR

    IC RF TXRX ISM 20VFQFN
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    DigiKey SI4430-A0-FMR Reel 2,500
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    Mouser Electronics SI4430-A0-FMR
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    Symmetry Electronics SI4430-A0-FMR 1
    • 1 $4.41
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    Vishay Siliconix SI4430BDY-T1-GE3

    MOSFET N-CH 30V 14A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4430BDY-T1-GE3 Reel 2,500
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    Find more SI4430 price and stock on Findchips.com

    SI4430 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4430-A0-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX ISM 930MHZ 3.6V 20-QFN Original PDF
    SI4430-A0-FMR Silicon Laboratories IC RF TXRX ISM 20VFQFN Original PDF
    SI4430-B1-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 900-960MHZ -8-13DB 20QFN Original PDF
    SI4430-B1-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 900-960MHZ -8-13DB 20QFN Original PDF
    SI4430BDY Vishay Siliconix N-Channel, 30-V (D-S) MOSFET Original PDF
    SI4430BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A 8-SOIC Original PDF
    SI4430BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A 8-SOIC Original PDF
    Si4430DY Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4430DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4430DY Vishay Telefunken Si4430BDY vs. Si4430DY Comparison Original PDF
    Si4430DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4430DY-T1 Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF

    SI4430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4430B

    Abstract: si4430bd
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4430B si4430bd

    Untitled

    Abstract: No abstract text available
    Text: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 08h 01 R Device Version vc[4] vc[3] vc[2] vc[1]


    Original     		PDF AN440 Si4430/31/32

    Si4430BDY

    Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 11-Mar-11

    Si4430DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4430DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4430DY

    SI4430BDY-E3

    Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
    Text: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D


    Original     		PDF Si4430BDY Si4430BDY--E3 Si4430BDY-T1--E3 S-42242--Rev. 13-Dec-04 SI4430BDY-E3 S3550 SI4430BDY-T1-E3

    SI4430BDY

    Abstract: 80 diode Si4430DY Si4430BDY-T1-E3 Si4430DY-T1 Si4430DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4430BDY vs. Si4430DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3 Si4430BDY-T1-E3 Replaces Si4430DY-T1 Summary of Performance:


    Original     		PDF Si4430BDY Si4430DY Si4430BDY-T1-E3 Si4430DY-T1-E3 Si4430DY-T1 80 diode

    Si4430BDY

    Abstract: A18280
    Text: SPICE Device Model Si4430BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4430BDY 18-Jul-08 A18280

    Si4430BDY

    Abstract: Si4430BDY-T1-GE3 Si4430BDY-T1-E3
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 18-Jul-08

    Si4430DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4430DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4430DY S-51095Rev. 13-Jun-05

    SI4730

    Abstract: AN461 Si4430 Si4432B AN453 diode GP2 354 SI4432-B1-FM si4432-b1 RF toy plane circuit diagram SI4430B
    Text: Si4430/31/32-B1 Si4430/31/32 ISM T RANSCEIVER Features Applications Silicon Laboratories’ Si4430/31/32 devices are highly integrated, single chip wireless ISM transceivers. The high-performance EZRadioPRO family includes a complete line of transmitters, receivers, and transceivers allowing the RF


    Original     		PDF Si4430/31/32-B1 Si4430/31/32 SI4730 AN461 Si4430 Si4432B AN453 diode GP2 354 SI4432-B1-FM si4432-b1 RF toy plane circuit diagram SI4430B

    Si4430DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4430DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4430DY 16-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 11-Mar-11

    si4430dy

    Abstract: No abstract text available
    Text: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4430DY S-00538--Rev. 27-Mar-00

    Untitled

    Abstract: No abstract text available
    Text: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4430DY S-99587--Rev. 20-Dec-99

    Si4430BDY

    Abstract: A18280
    Text: SPICE Device Model Si4430BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4430BDY S-51095Rev. 13-Jun-05 A18280

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT 24 SO-8 D S 1 8


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 18-Jul-08

    Si4432B

    Abstract: fsk modem 9400 ant-div switch RX 3152 8 pin integrated circuit frequency hopping spread spectrum 900 SI4430
    Text: Si4430/31/32-B1 Si4430/31/32 ISM T RANSCEIVER Features Silicon Laboratories’ Si4430/31/32 devices are highly integrated, single chip wireless ISM transceivers. The high-performance EZRadioPRO family includes a complete line of transmitters, receivers, and transceivers allowing the RF


    Original     		PDF Si4430/31/32-B1 Si4430/31/32 Si4431/32 Si4430) Si4432) Si4430/31 Si4432B fsk modem 9400 ant-div switch RX 3152 8 pin integrated circuit frequency hopping spread spectrum 900 SI4430

    Si4430DY

    Abstract: No abstract text available
    Text: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4430DY S-00538--Rev. 27-Mar-00

    74094

    Abstract: a 6151 A 7710 AN609 Si4430BDY
    Text: Si4430BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4430BDY AN609 31-Aug-05 74094 a 6151 A 7710

    AN440

    Abstract: Si4432 CRC-16 37H7D si443 crga ichip
    Text: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 00111 01 R Device Version vc[4] vc[3] vc[2]


    Original     		PDF AN440 Si4430/31/32 AN440 Si4432 CRC-16 37H7D si443 crga ichip

    Untitled

    Abstract: No abstract text available
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: Si4430DY
    Text: Si4430DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4430DY AN609 12-Jan-06

    Untitled

    Abstract: No abstract text available
    Text: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4430DY 08-Apr-05

    si4430

    Abstract: Siward crystal xtal OSC CMOS 32.768K
    Text: Si4430 Si4430 ISM T RANSCEIVER Features           Frequency Range = 900–960 MHz Sensitivity = –118 dBm +13 dBm Max Output Power Configurable –8 to +13 dBm Low Power Consumption 18.5 mA receive 28 mA @ +13 dBm transmit


    Original     		PDF Si4430 Si4430 20-Pin Siward crystal xtal OSC CMOS 32.768K