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    SI443 Price and Stock

    Vishay Siliconix SI4435FDY-T1-GE3

    MOSFET P-CH 30V 12.6A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4435FDY-T1-GE3 Reel 32,500 2,500
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    New Advantage Corporation SI4435FDY-T1-GE3 5,000 1
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    Vishay Siliconix SI4431CDY-T1-GE3

    MOSFET P-CH 30V 9A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4431CDY-T1-GE3 Reel 32,500 2,500
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    RS SI4431CDY-T1-GE3 Bulk 2,500
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    Bristol Electronics SI4431CDY-T1-GE3 6
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    New Advantage Corporation SI4431CDY-T1-GE3 15,000 1
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    Vishay Siliconix SI4435DDY-T1-GE3

    MOSFET P-CH 30V 11.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4435DDY-T1-GE3 Reel 21,854 2,500
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    RS SI4435DDY-T1-GE3 Bulk 2,500
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    SI4435DDY-T1-GE3 Bulk 2,500
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    New Advantage Corporation SI4435DDY-T1-GE3 130,000 1
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    Vishay Siliconix SI4434DY-T1-GE3

    MOSFET N-CH 250V 2.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4434DY-T1-GE3 Reel 15,000 2,500
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    SI4434DY-T1-GE3 Cut Tape 2,002 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
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    New Advantage Corporation SI4434DY-T1-GE3 10,000 1
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    Vishay Siliconix SI4434DY-T1-E3

    MOSFET N-CH 250V 2.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4434DY-T1-E3 Reel 7,500 2,500
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    • 10000 $1.25091
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    SI4434DY-T1-E3 Cut Tape 1,310 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
    • 10000 $1.36819
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    Find more SI443 price and stock on Findchips.com

    SI443 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4430-A0-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX ISM 930MHZ 3.6V 20-QFN Original PDF
    SI4430-A0-FMR Silicon Laboratories IC RF TXRX ISM 20VFQFN Original PDF
    SI4430-B1-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 900-960MHZ -8-13DB 20QFN Original PDF
    SI4430-B1-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 900-960MHZ -8-13DB 20QFN Original PDF
    SI4430BDY Vishay Siliconix N-Channel, 30-V (D-S) MOSFET Original PDF
    SI4430BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A 8-SOIC Original PDF
    SI4430BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A 8-SOIC Original PDF
    Si4430DY Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4430DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4430DY Vishay Telefunken Si4430BDY vs. Si4430DY Comparison Original PDF
    Si4430DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4430DY-T1 Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4431 Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4431-A0-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX ISM 930MHZ 3.6V 20-QFN Original PDF
    SI4431ADY Vishay VISHAY/SILICONIX P-CHANNEL MOSFETS SO-8 30V 7A 2.5W Original PDF
    Si4431ADY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI4431ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4431-B1-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 240-930MHZ -8-13DB 20QFN Original PDF
    SI4431-B1-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 240-930MHZ -8-13DB 20QFN Original PDF
    SI4431BDY Vishay Siliconix MOSFETs Original PDF

    SI443 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4431CDY

    Abstract: No abstract text available
    Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4430B

    Abstract: si4430bd
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4430B si4430bd

    Untitled

    Abstract: No abstract text available
    Text: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 08h 01 R Device Version vc[4] vc[3] vc[2] vc[1]


    Original     		PDF AN440 Si4430/31/32

    Si4430BDY

    Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 11-Mar-11

    Si4430DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4430DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4430DY

    Si4431BDY-T1

    Abstract: Si4431BDY Si4431BDY-T1-E3 si4431b
    Text: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8


    Original     		PDF Si4431BDY Si4431BDY-T1 Si4431BDY-T1-E3 08-Apr-05 si4431b

    7w66

    Abstract: Si4435DY D665
    Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4435DY 7w66 D665

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si4435DY

    Abstract: No abstract text available
    Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-47958--Rev. 15-Apr-96

    SI4431DY

    Abstract: No abstract text available
    Text: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4431DY S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: No abstract text available
    Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-47958--Rev. 15-Apr-96

    Si1000

    Abstract: 1000-TCB1C915 AN474 Silabs Si10xx Crystal Radio ezradiopro Si100x AN440 C8051F930
    Text: AN474 Si1000 C OD E E X A M P L E S 1. Introduction The Si1000 is a mixed signal microcontroller with an integrated EZRadioPRO Sub-GHz wireless transceiver. The single chip Si1000 is functionally equivalent to the C8051F930 MCU and the Si4432 EZRadioPRO transceiver. The


    Original     		PDF AN474 Si1000 C8051F930 Si4432 Si10xx C8051 1000-TCB1C915 AN474 Silabs Crystal Radio ezradiopro Si100x AN440

    SI4430BDY-E3

    Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
    Text: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D


    Original     		PDF Si4430BDY Si4430BDY--E3 Si4430BDY-T1--E3 S-42242--Rev. 13-Dec-04 SI4430BDY-E3 S3550 SI4430BDY-T1-E3

    SI4435BDY-T1

    Abstract: Si4435BDY
    Text: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS


    Original     		PDF Si4435BDY Si4435BDY-T1 Si4435BDY-T1--E3 08-Apr-05

    65521

    Abstract: 9221 AN609 73727
    Text: Si4438DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4438DY AN609 12-Jan-06 65521 9221 73727

    SI4430BDY

    Abstract: 80 diode Si4430DY Si4430BDY-T1-E3 Si4430DY-T1 Si4430DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4430BDY vs. Si4430DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3 Si4430BDY-T1-E3 Replaces Si4430DY-T1 Summary of Performance:


    Original     		PDF Si4430BDY Si4430DY Si4430BDY-T1-E3 Si4430DY-T1-E3 Si4430DY-T1 80 diode

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested


    Original     		PDF Si4434DY Si4434DY-T1-E3 18-Jul-08

    SI-4436

    Abstract: No abstract text available
    Text: New Product Si4436DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.036 at VGS = 10 V 8 0.043 at VGS = 4.5 V 8 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous


    Original     		PDF Si4436DY Si4436DY-T1-E3 Si4436DY-T1-GE3 11-Mar-11 SI-4436

    A1818

    Abstract: SI4431BDY-T1-E3
    Text: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8


    Original     		PDF Si4431BDY Si4431BDY-T1 Si4431BDY-T1-E3 18-Jul-08 A1818

    Si4430BDY

    Abstract: A18280
    Text: SPICE Device Model Si4430BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4430BDY 18-Jul-08 A18280

    SI4435DY

    Abstract: AN609 74549N
    Text: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4435DY AN609 31-Aug-05 74549N

    Si4434DY

    Abstract: Si4434DY-T1-E3 Si4434DY-T1-GE3
    Text: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET


    Original     		PDF Si4434DY Si4434DY-T1-E3 Si4434DY-T1-GE3 18-Jul-08

    Si4430BDY

    Abstract: Si4430BDY-T1-GE3 Si4430BDY-T1-E3
    Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si4431DY Semiconductors P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) r DS(on) (£2) 30 Id (A) 0.040 @VGs = -10 V ±5.8 0.070 @ VGs = -4.5 V ±4.5 s s s SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF Si4431DY S-49534â 06-Oct-97 DD17flflT