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    SI4438DY Search Results

    SI4438DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4438DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 36A 8-SOIC Original PDF
    SI4438DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 36A 8-SOIC Original PDF

    SI4438DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65521

    Abstract: 9221 AN609 73727
    Text: Si4438DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si4438DY AN609 12-Jan-06 65521 9221 73727

    Si4438DY-T1-E3

    Abstract: Si4438DY-T1-GE3 si4438
    Text: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si4438DY Si4438DY-T1-E3 Si4438DY-T1-GE3 11-Mar-11 si4438

    74156

    Abstract: Si4438DY
    Text: SPICE Device Model Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si4438DY to-10-V S-60180Rev. 13-Feb-06 74156

    Untitled

    Abstract: No abstract text available
    Text: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si4438DY Si4438DY-T1-E3 Si4438DY-T1-GE3 11-Mar-11

    SI4438DY

    Abstract: 12DE 73581
    Text: Si4438DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID rDS(on) (W) (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 D TrenchFETr Power MOSFET D 100 % Rg Tested D RoHS Compliant Qg (Typ) 41 nC RoHS COMPLIANT


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    PDF Si4438DY Si4438DY-T1--E3 18-Jul-08 12DE 73581

    what is datasheet 74156

    Abstract: 74156
    Text: SPICE Device Model Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si4438DY to-10-V 18-Jul-08 what is datasheet 74156 74156

    SI4438

    Abstract: No abstract text available
    Text: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si4438DY Si4438DY-T1-E3 Si4438DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4438

    SI4438DY-T1-E3

    Abstract: SI4438 73581
    Text: Si4438DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID rDS(on) (W) (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 D TrenchFETr Power MOSFET D 100 % Rg Tested D RoHS Compliant Qg (Typ) 41 nC RoHS COMPLIANT


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    PDF Si4438DY Si4438DY-T1--E3 08-Apr-05 SI4438DY-T1-E3 SI4438 73581

    Si4438DY-T1-E3

    Abstract: Si4438DY-T1-GE3
    Text: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    PDF Si4438DY Si4438DY-T1-E3 Si4438DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


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    PDF Si4438DY Si4438DY-T1-E3 Si4438DY-T1-GE3 30electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    LTC4352

    Abstract: LTM4608 MOSFET and parallel Schottky diode mosfet with Integrated Schottky Diodes DFN-12 LN1261CAL LN1351C SBG1025L Si7336ADP SMAJ12A
    Text: L DESIGN FEATURES 0V to 18V Ideal Diode Controller Saves Watts and Space over Schottky by Pinkesh Sachdev Introduction Schottky diodes are used in a variety of ways to implement multisource power systems. For instance, high availability electronic systems, such


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    PDF LTC4352 12-pin LTM4608 MOSFET and parallel Schottky diode mosfet with Integrated Schottky Diodes DFN-12 LN1261CAL LN1351C SBG1025L Si7336ADP SMAJ12A

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


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    PDF 250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

    schematic diagram 12v to 48v dc buck boost conver

    Abstract: schematic diagram 110v dc charger ultrasonic transducers 48V laptop Lithium-ion battery diagram schematic 12V, 20A automatic charger schematic Sanyo supercapacitors ultrasonic transducers 50w 40 khz mobile battery charger circuit using 7805 LTC4009-2 nesscap active balancing circuit
    Text: LINEAR TECHNOLOGY SEPTEMBER 2008 IN THIS ISSUE… COVER ARTICLE Replace Batteries in Power RideThrough Applications with Robust Supercaps and 3mm x 3mm Capacitor Charger .1 Jim Drew Linear in the News… .2


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    PDF 20mm2 1-800-4-LINEAR schematic diagram 12v to 48v dc buck boost conver schematic diagram 110v dc charger ultrasonic transducers 48V laptop Lithium-ion battery diagram schematic 12V, 20A automatic charger schematic Sanyo supercapacitors ultrasonic transducers 50w 40 khz mobile battery charger circuit using 7805 LTC4009-2 nesscap active balancing circuit

    st mosfet

    Abstract: 12-PIN LTC4352 LTC4352C LTC4352CDD LTC4352H LTC4352I SBG1025L Si7336ADP LTC4352IMS#PBF
    Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring Features n n n n n n n n n n Description Low Loss Replacement for Power Diode Controls N-Channel MOSFET 0V to 18V Supply ORing or Holdup 0.5 s Turn-On and Turn-Off Time Undervoltage and Overvoltage Protection


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    PDF LTC4352 12-Pin LTC4352 OT-23 LTC4412/LTC4412HV 8V/36V, TSOT-23 LTC4413/LTC4413-1 DFN-10 st mosfet LTC4352C LTC4352CDD LTC4352H LTC4352I SBG1025L Si7336ADP LTC4352IMS#PBF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04