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    SI4412 Price and Stock

    Vishay Siliconix SI4412ADY-T1-E3

    MOSFET N-CH 30V 5.8A 8SO
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    DigiKey SI4412ADY-T1-E3 Cut Tape
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    SI4412ADY-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI4412ADY-T1-GE3

    MOSFET N-CH 30V 5.8A 8SO
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    Vishay Siliconix SI4412DY-T1

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    Bristol Electronics SI4412DY-T1 7,510
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    SI4412DY-T1 1,131
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    Quest Components SI4412DY-T1 6,000
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    SI4412DY-T1 1,738
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    SI4412DY-T1 904
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    SI4412DY-T1 272
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    Vishay Intertechnologies SI4412DY-T1

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    Bristol Electronics SI4412DY-T1 2,500
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    Quest Components SI4412DY-T1 2,000
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    SI4412DY-T1 1,302
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    Vishay Siliconix SI4412DY

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    Bristol Electronics SI4412DY 300
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    SI4412DY 163
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    Quest Components SI4412DY 1,040
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    SI4412DY 618
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    Component Electronics, Inc SI4412DY 6
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    Find more SI4412 price and stock on Findchips.com

    SI4412 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4412ADY Siliconix N-Channel 30-V (D-S) Rated MOSFET Original PDF
    Si4412ADY Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    Si4412ADY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4412ADY-T1 Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4412ADY-T1 Vishay Telefunken Original PDF
    SI4412ADY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.8A 8-SOIC Original PDF
    SI4412ADY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.8A 8-SOIC Original PDF
    Si4412DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4412DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    Si4412DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4412DY Vishay 30-V (D-S) Single Original PDF
    Si4412DY Vishay Intertechnology N-Channel 30-V (D-S) Rated MOSFET Original PDF
    SI4412DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SO-8 Scan PDF
    SI4412DY_NL Fairchild Semiconductor 30V Single N-Channel, Logic Level, PowerTrench MOSFET Original PDF

    SI4412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507

    Untitled

    Abstract: No abstract text available
    Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S44176Rev.

    SI4412DY

    Abstract: No abstract text available
    Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 18-Jul-08

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S-47958--Rev. 15-Apr-96

    Si4412ADY

    Abstract: Si4412ADY-T1
    Text: Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.024 @ VGS = 10 V 8 0.035 @ VGS = 4.5 V 6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4412ADY Si4412ADY-T1 (with Tape and Reel)


    Original     		PDF Si4412ADY Si4412ADY-T1 S-03951--Rev. 26-May-03

    9959

    Abstract: SI4412DY 9a2a
    Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY 9959 9a2a

    Untitled

    Abstract: No abstract text available
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.024 @ VGS = 10 V 8 0.035 @ VGS = 4.5 V 6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4412ADY Si4412ADY-T1 (with Tape and Reel)


    Original     		PDF Si4412ADY Si4412ADY-T1 18-Jul-08

    9959

    Abstract: No abstract text available
    Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY 9959

    SI4412ADY

    Abstract: No abstract text available
    Text: Si4412ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "8 0.035 @ VGS = 4.5 V "6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4412ADY S-99547--Rev. 20-Dec-99

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Diode HER 507

    99547

    Abstract: No abstract text available
    Text: Si4412ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "8 0.035 @ VGS = 4.5 V "6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4412ADY S-99547--Rev. 20-Dec-99 99547

    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 11-Mar-11 Diode HER 507

    SI4412DY

    Abstract: S-49534
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY 08-Apr-05 S-49534

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY

    Si4412ADY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4412ADY 17-Apr-01

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4412DY S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8 0.035 at VGS = 4.5 V 6.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4412ADY 2002/95/EC Si4412ADY-T1-E3 Si4412ADY-T1-GE3 11-Mar-11

    6914

    Abstract: AN609 Si4412ADY
    Text: Si4412ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4412ADY AN609 15-Mar-07 6914

    Si4412ADY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4412ADY 18-Jul-08

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    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    Untitled

    Abstract: No abstract text available
    Text: Temic Si4412DY Semiconductors N-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.028 @ VGs = 10 V ±7.0 0.042 @ VGs = 4.5 V ±5.8 D D D D SO-8 s s s N-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF Si4412DY S-49534â 06-Oct-97 S2SM735 DD17flflT