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    Vishay Siliconix SI4276DY-T1-E3

    MOSFET 2N-CH 30V 8A 8SOIC
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    Vishay Siliconix SI4276DY-T1-GE3

    MOSFET 2N-CH 30V 8A 8SOIC
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    SI4276DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4276DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A SO8 Original PDF
    SI4276DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8-SOIC Original PDF

    SI4276DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si4276DY AN609, 19-May-10 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 18-Jul-08 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		Si4276DY-T1-E3 2002/95/EC 150hay 11-Mar-11 SI4276DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		Si4276DY-T1-E3 2002/95/EC 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si4276

    Abstract: SI4276DY
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		Si4276DY-T1-E3 2002/95/EC 150trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4276 SI4276DY PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 11-Mar-11 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4276DY 18-Jul-08 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF