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    SI4228DY Search Results

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    SI4228DY Price and Stock

    Vishay Siliconix SI4228DY-T1-GE3

    MOSFET 2N-CH 25V 8A 8SOIC
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    DigiKey SI4228DY-T1-GE3 Cut Tape 8,621 1
    • 1 $1.37
    • 10 $0.866
    • 100 $1.37
    • 1000 $0.40772
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    SI4228DY-T1-GE3 Digi-Reel 8,621 1
    • 1 $1.37
    • 10 $0.866
    • 100 $1.37
    • 1000 $0.40772
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    SI4228DY-T1-GE3 Reel 5,000 2,500
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    Vishay Siliconix SI4228DY-T1-E3

    MOSFET 2N-CH 25V 8A 8SOIC
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    DigiKey SI4228DY-T1-E3 Reel
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    Vishay Intertechnologies SI4228DY-T1-GE3

    DUAL N-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SI4228DY-T1-GE3)
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    Avnet Americas SI4228DY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4228DY-T1-GE3 69,916
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    Arrow Electronics SI4228DY-T1-GE3 Cut Strips 9 17 Weeks 1
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    Newark SI4228DY-T1-GE3 Cut Tape 2,500
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    SI4228DY-T1-GE3 Reel 2,500
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    TTI SI4228DY-T1-GE3 Reel 2,500
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    TME SI4228DY-T1-GE3 1
    • 1 $0.775
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    EBV Elektronik SI4228DY-T1-GE3 18 Weeks 2,500
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    SI4228DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4228DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 8A SO8 Original PDF
    SI4228DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 8A 8-SOIC Original PDF

    SI4228DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4228DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4228DY-T1-E3 2002/95/EC 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4228DY

    Abstract: si4228
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 18-Jul-08 si4228

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4228DY Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4228DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4228DY-T1-E3 2002/95/EC 25hay 11-Mar-11

    si4228

    Abstract: No abstract text available
    Text: Si4228DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4228DY AN609, 1613u 1920m 7658m 3832u 5799m 6769m 6927m si4228

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836