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    SI4202DY Price and Stock

    Vishay Siliconix SI4202DY-T1-GE3

    MOSFET 2N-CH 30V 12.1A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4202DY-T1-GE3 Reel 5,000 2,500
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    • 10000 $0.5252
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    SI4202DY-T1-GE3 Cut Tape 113 1
    • 1 $1.33
    • 10 $1.091
    • 100 $0.8484
    • 1000 $0.5858
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    SI4202DY-T1-GE3 Digi-Reel 1
    • 1 $1.33
    • 10 $1.091
    • 100 $0.8484
    • 1000 $0.5858
    • 10000 $0.5858
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    New Advantage Corporation SI4202DY-T1-GE3 10,000 1
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    Vishay Intertechnologies SI4202DY-T1-GE3

    Transistor MOSFET Array Dual N-CH 30V 12.1A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4202DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4202DY-T1-GE3 Reel 5,000 16 Weeks 2,500
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    SI4202DY-T1-GE3 Reel 2,500
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    Mouser Electronics SI4202DY-T1-GE3 6,250
    • 1 $1.32
    • 10 $1.08
    • 100 $0.848
    • 1000 $0.585
    • 10000 $0.5
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    Verical SI4202DY-T1-GE3 2,500 2,500
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    Quest Components SI4202DY-T1-GE3 118
    • 1 $1.7
    • 10 $1.7
    • 100 $0.51
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    SI4202DY-T1-GE3 772
    • 1 $2.3
    • 10 $2.3
    • 100 $1.15
    • 1000 $0.92
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    TTI SI4202DY-T1-GE3 Reel 12,500 2,500
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    Avnet Asia SI4202DY-T1-GE3 14 Weeks 2,500
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    Vishay BLH SI4202DY-T1-GE3

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    Bristol Electronics SI4202DY-T1-GE3 148 4
    • 1 -
    • 10 $1.275
    • 100 $0.4781
    • 1000 $0.4781
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    SI4202DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4202DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 12.1A 8SO Original PDF

    SI4202DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4202DY AN609, 2175m 2923m 2439m 3089u 1542m 7069m 8017m

    Untitled

    Abstract: No abstract text available
    Text: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4202DY 2002/95/EC Si4202DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4202

    Abstract: SI4202DY
    Text: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4202DY 2002/95/EC Si4202DY-T1-GE3 11-Mar-11 si4202

    Si4202

    Abstract: No abstract text available
    Text: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4202DY 2002/95/EC Si4202DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si4202

    Untitled

    Abstract: No abstract text available
    Text: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4202DY 2002/95/EC Si4202DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4202DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4202DY 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836