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    SI4004 Search Results

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    SI4004 Price and Stock

    Vishay Siliconix SI4004DY-T1-GE3

    MOSFET N-CH 20V 12A 8SO
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    DigiKey SI4004DY-T1-GE3 Digi-Reel 1
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    SI4004DY-T1-GE3 Cut Tape
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    RS SI4004DY-T1-GE3 Bulk 100
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    PEPPERL+FUCHS GmbH ACC-PACK-INK-TSI40 04

    Rotary Encoder Accessories |Pepperl+Fuchs ACC-PACK-INK-TSI40 04
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    Newark ACC-PACK-INK-TSI40 04 Bulk 1
    • 1 $55.74
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    Pulse Electronics Corporation MSI-400404-50NM-E-IS

    PULMSI-400404-50NM-E-IS CHILISIN INDUCTO (Alt: MSI-400404-50NM-E-IS)
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    Avnet Asia MSI-400404-50NM-E-IS 10 Weeks 9,000
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    Pulse Electronics Corporation MSI-400406-R10M-E

    Power Inductor (SMD), 100 nH, ? 20%, 40 A, Shielded, 16 A, 4.5mm x 4.5mm x 6mm (Alt: MSI-400406-R10M-E)
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    Avnet Asia MSI-400406-R10M-E 6 Weeks 6,000
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    Pulse Electronics Corporation MSI-400404-65NL-I-VH

    PULMSI-400404-65NL-I-VH CHILISIN INDUCTO (Alt: MSI-400404-65NL-I-VH)
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    Avnet Asia MSI-400404-65NL-I-VH 16 Weeks 9,000
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    SI4004 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4004DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 12A 8-SOIC Original PDF

    SI4004 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S10-1617

    Abstract: No abstract text available
    Text: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4004DY 18-Jul-08 S10-1617 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4004DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si4004DY AN609, 7091m 5039m 6331m 9944m 5460m 2019m 0747m PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si4004

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 18-Jul-08 si4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    CP2201EB

    Abstract: cp220x Wireless markup language abstract LM015 CP2201 Silabs AN237 AN292 "power sourcing equipment" F340
    Text: AN292 EMBEDDED ETHERNET SYSTEM DESIGN GUIDE Relevant Devices This application note applies to the following devices: CP2200, CP2201 1. Introduction Embedded systems today are small, fast, and very powerful. Embedded connectivity stands at the forefront of harnessing the power of today’s embedded systems.


    Original     		AN292 CP2200, CP2201 CP220x CP2201EB Wireless markup language abstract LM015 CP2201 Silabs AN237 AN292 "power sourcing equipment" F340 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    CP2201EB

    Abstract: CP220x Wireless markup language abstract LM015 programmer schematic tcp embedded AN292 6605752-1 6605752 embedded system projects pdf free download Silabs
    Text: AN292 E MBEDDED E T H E R N E T S Y S T E M D ESIGN G UIDE Relevant Devices This application note applies to the following devices: CP2200, CP2201 1. Introduction Embedded systems today are small, fast, and very powerful. Embedded connectivity stands at the forefront


    Original     		AN292 CP2200, CP2201 CP220x CP2201EB Wireless markup language abstract LM015 programmer schematic tcp embedded AN292 6605752-1 6605752 embedded system projects pdf free download Silabs PDF

    Untitled

    Abstract: No abstract text available
    Text: lOOOpFj 2 K V ELEC TRIC A L SPEC IFIC ATIO N S: 1.0 TU R N S 2 .0 INDUCTANCE: 3 .0 LEAKAG E 4 .0 INTERW INDING 5 .0 DC NDTES RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) (P 6 - P 4 (P 3 - P 1 INDUCTANCE: 350uH 350uH P6-P4 P3-P1


    OCR Scan     		350uH CT720034X1 SI-40048 PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 6 - P 8 - P 3 : (J 6 -J 3 ) ( P 2 - P 7 - P 1 ) : (J 2 -J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 8 )= (P 8 -P 3 )


    OCR Scan     		200uH 10KHz CT720034-X1 SI-40047 PDF

    40048

    Abstract: No abstract text available
    Text: lOOOpF I 2 K V 1 ! 1 PB 75 -A A /V 1 ! 1 75 ÎP2) -AA/V- ELECTRICAL SPECIFICATIONS: NDTES 1.0 T U R N S RATIO : ( P 6 - P 5 - P 4 ) (P 3 -P 2 -P 1 ) : (J 6 -J 3 ) : (J 2 -J 1 ) 2.0 INDUCTANCE : 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0


    OCR Scan     		350uH 100KHz, CT720034X1 SI-40048 40048 PDF

    1J54

    Abstract: SI-4Q040
    Text: PORTS 2,3 & 4 IQOOpF ; 2K V PORT 1 Irt \r o/ P7j J/ Jo (Pf if (p4Ì \y (po) J4n ( p i) 11 (p?) N f lT F S 1,0 P IN S WITHDUT E L E C T R IC A L C D N N E C T ID N ARE DM ITTED, InNet T e c h n o l o g i e s httpi//*iwiv.lnnet-'tech.con Inc. Siewart C onnecior System s


    OCR Scan     		SI-4Q040 30MHz 60MHz 80MHz CT720091 /CT720074/24-0028 105mW 590nm 565nm SI-40040 1J54 PDF

    SI-40043

    Abstract: 40043
    Text: lOOOpFj £ K V ELECTRICAL 1.0 S PECIFICATIO NS' TURNS RATIO < P6-P5-P4> <P3-P2-P1> 2.0 INDUCTANCE 3.0 L E A K A G E NDTES 1.0 PINS WITHOUT E L E C T R I C A L CDNNECTIDN ARE OMITTED, i 1CT ! 1CT± 3V. i J6 -J3 i <J2-J1> i 1CT i 1CT ± 3% (P6-P4) ! 3 5 0 uH MIN. g 0.1V , lOOKHz, 8mA DC B ia s


    OCR Scan     		C1720034X1 SI-40043 SI-40043 40043 PDF

    40049

    Abstract: No abstract text available
    Text: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J 6 - J 3 ) = (J2- J1 ) (P 6 - P 4


    OCR Scan     		100KH 350uH CT720035X1 40049 PDF

    EN555

    Abstract: 2p1t
    Text: IQOQpF 2KV E L E C T R IC A L SPEC IFIC ATIO N S' 1.0 TURNS RATIO P 6 - P 5 - P 4 ) N flT F S 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. i 1C T • 1 C T ± 3% i ( J & -J 3 ) ' 1CT ! 1CT ± 37. <P 3 -P2-P 1) ■ ( J 2 - J 1 ) 2.0 INDUCTANCE CP6-P4)


    OCR Scan     		SI-40041 EN555 2p1t PDF

    J22CA

    Abstract: No abstract text available
    Text: lOOOpFj £ K V E L E C T R I C A L S P E C IF I C A T IO N S ' 1.0 T U R N S R A T IO < P 6 - P 5 - P 4 > < P 3 -P 2 -P 1 > 2.0 IN D U C T A N C E 3.0 NDTES i < J 2 -J1 > i ic t : e ± 3 •/. P 6 -P 4 ! 3 5 0 uH MIN. g 0.1V , lOOKHz, 8mA DC B ia s (P 3 -P D


    OCR Scan     		350uH SI-40042 J22CA PDF