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    SI3460DDV Search Results

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    SI3460DDV Price and Stock

    Vishay Siliconix SI3460DDV-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI3460DDV-T1-BE3 Reel 6,000 3,000
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    SI3460DDV-T1-BE3 Cut Tape 2,979 1
    • 1 $0.42
    • 10 $0.299
    • 100 $0.1506
    • 1000 $0.10383
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    SI3460DDV-T1-BE3 Digi-Reel 1
    • 1 $0.42
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    Vishay Siliconix SI3460DDV-T1-GE3

    MOSFET N-CH 20V 7.9A 6TSOP
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    DigiKey SI3460DDV-T1-GE3 Reel 3,000 3,000
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    SI3460DDV-T1-GE3 Cut Tape 714 1
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    • 1000 $0.14998
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    SI3460DDV-T1-GE3 Digi-Reel 1
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    New Advantage Corporation SI3460DDV-T1-GE3 18,000 1
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    Vishay Intertechnologies SI3460DDV-T1-GE3

    Trans MOSFET N-CH 20V 6.2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460DDV-T1-GE3)
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    Avnet Americas SI3460DDV-T1-GE3 Reel 12,000 6 Weeks 3,000
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    SI3460DDV-T1-GE3 Reel 6 Weeks 3,000
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    Mouser Electronics SI3460DDV-T1-GE3 5,772
    • 1 $0.4
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    Bristol Electronics SI3460DDV-T1-GE3 5,106
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    SI3460DDV-T1-GE3 6,314
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    Quest Components SI3460DDV-T1-GE3 5,051
    • 1 $0.84
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    TTI SI3460DDV-T1-GE3 Reel 12,000 3,000
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    TME SI3460DDV-T1-GE3 2,490 1
    • 1 $0.379
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    Vishay Intertechnologies SI3460DDV-T1-BE3

    Transistor MOSFET N-CH 20V 7.9A 6-Pin TSOP - Tape and Reel (Alt: SI3460DDV-T1-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI3460DDV-T1-BE3 Reel 16 Weeks 3,000
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    Mouser Electronics SI3460DDV-T1-BE3 83,505
    • 1 $0.4
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    • 100 $0.151
    • 1000 $0.113
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    Bristol Electronics SI3460DDV-T1-BE3 5,900
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    TTI SI3460DDV-T1-BE3 Reel 15,000 3,000
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    SI3460DDV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI3460DDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 7.9A 6-TSOP Original PDF

    SI3460DDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si3460DDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si3460DDV AN609, 31-May-10

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si3460DDV 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.028 at VGS = 4.5 V 7.9 0.032 at VGS = 2.5 V 7.4 0.038 at VGS = 1.8 V 6.8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3460DDV 2002/95/EC Si3460DDV-T1-GE3 18-Jul-08

    Si3460BDV

    Abstract: SI3460BDV-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si3460DDV vs. Si3460BDV Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3460DDV-T1-GE3 replaces Si3460BDV-T1-GE3 Si3460DDV-T1-GE3 replaces Si3460BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    PDF Si3460DDV Si3460BDV Si3460DDV-T1-GE3 Si3460BDV-T1-GE3 09-Apr-10

    Untitled

    Abstract: No abstract text available
    Text: Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.028 at VGS = 4.5 V 7.9 0.032 at VGS = 2.5 V 7.4 0.038 at VGS = 1.8 V 6.8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3460DDV 2002/95/EC Si3460DDV-T1-llectual 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3460DDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.028 at VGS = 4.5 V 7.9 0.032 at VGS = 2.5 V 7.4 0.038 at VGS = 1.8 V 6.8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3460DDV 2002/95/EC Si3460DDV-T1-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irf3717

    Abstract: FDV0630-1R0
    Text: LTC3872 No RSENSE Current Mode Boost DC/DC Controller Features Description No Current Sense Resistor Required n V OUT up to 60V n Constant Frequency 550kHz Operation n Internal Soft-Start and Optional External Soft-Start n Adjustable Current Limit n Pulse Skipping at Light Load


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    PDF LTC3872 550kHz OT-23 LTC3704 50kHz LTC1871/LTC1871-7 LTC3703/LTC3703-5 600kHz, SSOP-16, SSOP-28 irf3717 FDV0630-1R0

    Untitled

    Abstract: No abstract text available
    Text: LTC3872-1 No RSENSE Current Mode Boost DC/DC Controller Features Description No Current Sense Resistor Required n V OUT up to 60V n Constant Frequency 550kHz Operation n Internal Soft-Start and Optional External Soft-Start n Adjustable Current Limit n Pulse Skipping at Light Load


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    PDF LTC3872-1 550kHz OT-23 LTC1871/LTC1871-1/ LTC1871-7 LTC3859AL 50kHz MSOP-10 38721f com/LTC3872-1

    3 watt 70v zener diode

    Abstract: inkjet print head interface K784P
    Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP


    Original
    PDF 00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P

    FDV0630-1R0

    Abstract: No abstract text available
    Text: 5 4 3 2 1 REVISION HISTORY ECO REV 1 1 DESCRIPTION ADD -B VERSION, PROD DATE APPROVED 01/14/14 VICTOR K. D D VIN Vin C10 10uF 10V 1 L1 1.0uH FDV0630-1R0 IPRG SW 8 RUN GND E2 C9 0.1uF NGATE 5 VOUT Vout E3 C1 100uF 10V C2 100uF 10V C11 OPT C3 OPT 4 C7 47pF C5


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    PDF FDV0630-1R0 100uF Si3460DDV 1800pF Si4116DY 470uF LTC3872-1ETS8 LTC3872ETS8/LTC3872-1ETS8, LTC3872ETS8 FDV0630-1R0

    Untitled

    Abstract: No abstract text available
    Text: QUICK START GUIDE FOR DC989B-A TINY NO RSENSE BOOST CONVERTER LTC3872 DESCRIPTION Demonstration circuit 989B-A is a single-output boost converter, it features tiny, boost controller LTC3872. The input voltage is from 3.0V to 4.5V without output de-rating. The supply has one output: 5V/2AMAX. Minimum input voltage is 2.75V.


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    PDF DC989B-A LTC3872 989B-A LTC3872. LTC3872, DC989B-A Si4116DY Si3460DDV FDV0630-1R0 100uF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836