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    SI2392ADS Price and Stock

    Vishay Siliconix SI2392ADS-T1-BE3

    N-CHANNEL 100-V (D-S) MOSFET
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    DigiKey SI2392ADS-T1-BE3 Cut Tape 2,188 1
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    Vishay Siliconix SI2392ADS-T1-GE3

    MOSFET N-CH 100V 3.1A SOT23-3
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    Vishay Intertechnologies SI2392ADS-T1-BE3

    N-CHANNEL 100-V (D-S) MOSFET (Alt: SI2392ADS-T1-BE3)
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    Avnet Americas SI2392ADS-T1-BE3 26 Weeks 6,000
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    Mouser Electronics SI2392ADS-T1-BE3 14,917
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    Verical SI2392ADS-T1-BE3 3,000 3,000
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    Vishay Intertechnologies SI2392ADS-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI2392ADS-T1-GE3)
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    Avnet Americas SI2392ADS-T1-GE3 Reel 26 Weeks 6,000
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    Mouser Electronics SI2392ADS-T1-GE3 28,650
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    Verical SI2392ADS-T1-GE3 2,400 38
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    Arrow Electronics SI2392ADS-T1-GE3 Cut Strips 2,400 26 Weeks 1
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    Newark SI2392ADS-T1-GE3 Cut Tape 5
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    SI2392ADS-T1-GE3 Reel 6,000
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    TME SI2392ADS-T1-GE3 1
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    Chip 1 Exchange SI2392ADS-T1-GE3 39,000
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    Avnet Asia SI2392ADS-T1-GE3 30 Weeks 6,000
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    Chip-Germany GmbH SI2392ADS-T1-GE3 62
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    Chip1Stop SI2392ADS-T1-GE3 2,400
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    EBV Elektronik SI2392ADS-T1-GE3 29 Weeks 3,000
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    SI2392ADS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI2392ADS-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 3.1A SOT-23 Original PDF

    SI2392ADS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET


    Original     		PDF Si2392ADS OT-23 O-236) Si2392ADS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2392ADS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si2392ADS AN609, 3452u 7006u 5750m 4348m 8505m 7774m 6074m 30-Apr-15

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs