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    SI2392ADS Price and Stock

    Vishay Siliconix SI2392ADS-T1-BE3

    N-CHANNEL 100-V (D-S) MOSFET
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    DigiKey SI2392ADS-T1-BE3 Cut Tape 2,134 1
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    SI2392ADS-T1-BE3 Digi-Reel 2,134 1
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    SI2392ADS-T1-BE3 Reel 6,000
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    Vishay Siliconix SI2392ADS-T1-GE3

    MOSFET N-CH 100V 3.1A SOT23-3
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    DigiKey SI2392ADS-T1-GE3 Digi-Reel 1,253 1
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    SI2392ADS-T1-GE3 Cut Tape 1,253 1
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    SI2392ADS-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI2392ADS-T1-BE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI2392ADS-T1-BE3)
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    Avnet Americas SI2392ADS-T1-BE3 Reel 12,000 27 Weeks 3,000
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    Mouser Electronics SI2392ADS-T1-BE3 20,827
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    Newark SI2392ADS-T1-BE3 Bulk 6,000
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    TTI SI2392ADS-T1-BE3 Reel 30,000 3,000
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    EBV Elektronik SI2392ADS-T1-BE3 28 Weeks 3,000
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    Vishay Intertechnologies SI2392ADS-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI2392ADS-T1-GE3)
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    Avnet Americas SI2392ADS-T1-GE3 Reel 27 Weeks 6,000
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    Mouser Electronics SI2392ADS-T1-GE3 16,455
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    Newark SI2392ADS-T1-GE3 Reel 6,000
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    SI2392ADS-T1-GE3 Cut Tape 5
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    TTI SI2392ADS-T1-GE3 Reel 21,000 3,000
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    SI2392ADS-T1-GE3 Cut Tape 3,000 25
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    TME SI2392ADS-T1-GE3 1
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    Chip 1 Exchange SI2392ADS-T1-GE3 39,000
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    Avnet Asia SI2392ADS-T1-GE3 29 Weeks 6,000
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    Chip-Germany GmbH SI2392ADS-T1-GE3 62
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    EBV Elektronik SI2392ADS-T1-GE3 28 Weeks 3,000
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    Vishay Huntington SI2392ADS-T1-GE3

    MOSFET N-CH 100V 3.1A SOT-23
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    Win Source Electronics SI2392ADS-T1-GE3 93,000
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    SI2392ADS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2392ADS-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 3.1A SOT-23 Original PDF

    SI2392ADS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET


    Original
    Si2392ADS OT-23 O-236) Si2392ADS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2392ADS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    Si2392ADS AN609, 3452u 7006u 5750m 4348m 8505m 7774m 6074m 30-Apr-15 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original
    SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF