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    SI2365EDS Price and Stock

    Vishay Siliconix SI2365EDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2365EDS-T1-BE3 Cut Tape 2,579 1
    • 1 $0.42
    • 10 $0.257
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    SI2365EDS-T1-BE3 Digi-Reel 2,579 1
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    SI2365EDS-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI2365EDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2365EDS-T1-BE3)
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    Avnet Americas SI2365EDS-T1-BE3 Reel 6,000 18 Weeks 3,000
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    Mouser Electronics SI2365EDS-T1-BE3 70,943
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    • 100 $0.182
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    Verical SI2365EDS-T1-BE3 3,000 3,000
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    Arrow Electronics SI2365EDS-T1-BE3 3,000 18 Weeks 3,000
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    Bristol Electronics SI2365EDS-T1-BE3 3,946
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    TTI SI2365EDS-T1-BE3 Reel 33,000 3,000
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    TME SI2365EDS-T1-BE3 1
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    • 10 $0.256
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    EBV Elektronik SI2365EDS-T1-BE3 19 Weeks 3,000
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    Vishay Intertechnologies SI2365EDS-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2365EDS-T1-GE3)
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    Avnet Americas SI2365EDS-T1-GE3 Reel 6,000 6 Weeks 3,000
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    SI2365EDS-T1-GE3 Ammo Pack 17 Weeks, 3 Days 1
    • 1 $0.3
    • 10 $0.203
    • 100 $0.105
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    Mouser Electronics SI2365EDS-T1-GE3 114,926
    • 1 $0.39
    • 10 $0.237
    • 100 $0.121
    • 1000 $0.096
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    Verical SI2365EDS-T1-GE3 15,000 3,000
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    SI2365EDS-T1-GE3 9,000 3,000
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    SI2365EDS-T1-GE3 2,875 582
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    Arrow Electronics SI2365EDS-T1-GE3 15,000 6 Weeks 3,000
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    SI2365EDS-T1-GE3 9,000 6 Weeks 3,000
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    Newark SI2365EDS-T1-GE3 Reel 6,000 3,000
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    SI2365EDS-T1-GE3 Reel 3,000 3,000
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    SI2365EDS-T1-GE3 Cut Tape 2,875 1
    • 1 $0.086
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    • 100 $0.079
    • 1000 $0.079
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    TTI SI2365EDS-T1-GE3 Reel 6,000 3,000
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    TME SI2365EDS-T1-GE3 3,057 1
    • 1 $0.347
    • 10 $0.249
    • 100 $0.132
    • 1000 $0.09
    • 10000 $0.082
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    Avnet Asia SI2365EDS-T1-GE3 8 Weeks 3,000
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    Component Electronics, Inc SI2365EDS-T1-GE3 5
    • 1 $3.08
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    • 100 $2.31
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    EBV Elektronik SI2365EDS-T1-GE3 7 Weeks 3,000
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    Vishay Siliconix SI2365EDS-T1-GE3

    SI2365EDS-T1-GE3 P-channel MOSFET Transistor, 4.7 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2365EDS-T1-GE3
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    RS SI2365EDS-T1-GE3 Bulk 3,000
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    Chip 1 Exchange SI2365EDS-T1-GE3 15,472
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    Vishay Intertechnologies SI2365EDS-TI-GE3

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    Chip-Germany GmbH SI2365EDS-TI-GE3 Reel 2,550
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    Find more SI2365EDS price and stock on Findchips.com

    SI2365EDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2365EDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.9A TO-236 Original PDF

    SI2365EDS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    si2365eds

    Abstract: SI2365EDS-T1-GE3
    Text: Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23) G APPLICATIONS


    Original     		Si2365EDS O-236 OT-23) Si2365EDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SI2365

    Abstract: Si2365EDS SI2365EDS-T1-GE3 P6 marking
    Text: New Product Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23)


    Original     		Si2365EDS O-236 OT-23) Si2365EDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A SI2365 P6 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2365EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2365EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF