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    SI236 Price and Stock

    MOSLEADER SI2366DS-T1-GE3-ML

    N 30V 5.8A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2366DS-T1-GE3-ML Reel 300,000 200
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    • 1000 $0.03416
    • 10000 $0.03122
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    MOSLEADER SI2367DS-T1-GE3-ML

    P -20V 3.8A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2367DS-T1-GE3-ML Reel 300,000 200
    • 1 -
    • 10 -
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    • 1000 $0.03416
    • 10000 $0.03122
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    Vishay Siliconix SI2369BDS-T1-GE3

    MOSFET P-CH 30V 5.6A/7.5A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2369BDS-T1-GE3 Cut Tape 19,002 1
    • 1 $0.51
    • 10 $0.395
    • 100 $0.2372
    • 1000 $0.14938
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    SI2369BDS-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.10875
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    New Advantage Corporation SI2369BDS-T1-GE3 12,000 1
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    Vishay Siliconix SI2365EDS-T1-GE3

    MOSFET P-CH 20V 5.9A TO236
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2365EDS-T1-GE3 Reel 18,000 3,000
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    SI2365EDS-T1-GE3 Cut Tape 2,654 1
    • 1 $0.39
    • 10 $0.275
    • 100 $0.1385
    • 1000 $0.09555
    • 10000 $0.09555
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    RS SI2365EDS-T1-GE3 Bulk 3,000
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    Chip 1 Exchange SI2365EDS-T1-GE3 15,600
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    Vishay Siliconix SI2366DS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2366DS-T1-BE3 Reel 6,000 3,000
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    SI2366DS-T1-BE3 Cut Tape 1,842 1
    • 1 $0.44
    • 10 $0.378
    • 100 $0.2626
    • 1000 $0.16665
    • 10000 $0.16665
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    Find more SI236 price and stock on Findchips.com

    SI236 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI2365EDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.9A TO-236 Original PDF
    SI2366DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.8A SOT-23 Original PDF
    SI2367DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.8A SOT-23 Original PDF
    SI2369BDS-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 5.6A/7.5A SOT23 Original PDF
    SI2369DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7.6A TO-236 Original PDF
    SI236N Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SI236N Unknown Discontinued Transistor Data Book 1975 Scan PDF

    SI236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si2366

    Abstract: No abstract text available
    Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2366DS AN609, J2523 4374u 1469m 9180m 0805u 5327u 7530m 0215u si2366

    Untitled

    Abstract: No abstract text available
    Text: SI236N Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)15Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF SI236N

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI2366DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2366DS Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2366DS 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2367DS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2367DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si2365eds

    Abstract: SI2365EDS-T1-GE3
    Text: Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23) G APPLICATIONS


    Original     		PDF Si2365EDS O-236 OT-23) Si2365EDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Marking code H6

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 11-Mar-11 Marking code H6

    Si2367DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF Si2367DS 18-Jul-08

    Marking code H6

    Abstract: si2366 si23
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Marking code H6 si2366 si23

    SI2367DS

    Abstract: No abstract text available
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2367DS 2002/95/EC O-236 OT-23) Si2367DS-T1-GE3 11-Mar-11

    Si2367DS

    Abstract: H7 MARKING
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 18-Jul-08 H7 MARKING

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2369DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si2367

    Abstract: h7 sot23 diode SI2367DS SI236
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2367DS 2002/95/EC O-236 OT-23) Si2367DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2367 h7 sot23 diode SI236

    5506

    Abstract: AN609 Si2367DS
    Text: Si2367DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2367DS AN609, 21-Jul-09 5506 AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2366DS www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2366DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2365EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2365EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)d VDS (V) RDS(on) (Ω) 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    SI2369DS

    Abstract: No abstract text available
    Text: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a


    Original     		PDF Si2369DS O-236 OT-23) Si2369DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A

    2SK19GR

    Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V 2SK19GR X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001