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    SI230 Price and Stock

    MOSLEADER SI2301-ML

    20V 2.2A 700mW P Channel SOT-23
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    DigiKey SI2301-ML Reel 300,000 200
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    MOSLEADER SI2300DS-T1-GE3-ML

    N 30V 3.6A SOT-23
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    DigiKey SI2300DS-T1-GE3-ML Reel 300,000 200
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    MOSLEADER SI2302DDS-T1-GE3-ML

    N 20V 2.9A SOT-23
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    DigiKey SI2302DDS-T1-GE3-ML Reel 300,000 200
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    Vishay Siliconix SI2307CDS-T1-E3

    MOSFET P-CH 30V 3.5A SOT23-3
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    DigiKey SI2307CDS-T1-E3 Reel 30,000 3,000
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    SI2307CDS-T1-E3 Cut Tape 1,559 1
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    New Advantage Corporation SI2307CDS-T1-E3 12,000 1
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    Vishay Siliconix SI2303CDS-T1-GE3

    MOSFET P-CH 30V 2.7A SOT23-3
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    DigiKey SI2303CDS-T1-GE3 Reel 18,000 3,000
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    SI2303CDS-T1-GE3 Cut Tape 1,090 1
    • 1 $0.43
    • 10 $0.369
    • 100 $0.2563
    • 1000 $0.16265
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    New Advantage Corporation SI2303CDS-T1-GE3 18,000 1
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    Find more SI230 price and stock on Findchips.com

    SI230 Datasheets (154)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI2300 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    SI2300 TY Semiconductor TY Equivalent - N-Channel Enhancement Mode MOSFET - SOT-23 Original PDF
    SI2300DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23 Original PDF
    SI2300-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    SI2301-3A Unknown MOSFET SOT-23 P Channel 20V Original PDF
    Si2301ADS Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301ADS Vishay Telefunken V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET Original PDF
    Si2301ADS-E3 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 Original PDF
    Si2301ADS-T1 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL Original PDF
    Si2301ADS-T1-E3 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL Original PDF
    SI2301A-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    Si2301BD Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 Original PDF
    Si2301BDS SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDST1 Vishay MOSFET,P CHAN,2.5V,SOT23 Original PDF
    Si2301BDS-T1 Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-T1-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 T/R Original PDF
    SI2301BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF
    SI2301BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF
    ...

    SI230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking L4 mosfet sot23

    Abstract: SI2304
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304

    si2301

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    Si2303CDS

    Abstract: No abstract text available
    Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 Si2303CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    si2301cds-t1-ge3

    Abstract: No abstract text available
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3


    Original     		PDF Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1

    si2300 sot-23

    Abstract: No abstract text available
    Text: Product specification KI2300 SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1


    Original     		PDF KI2300 SI2300) OT-23 si2300 sot-23

    SI2301

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2301 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V


    Original     		PDF SI2301 OT-23 OT-23 SI2301

    Si2303CDS

    Abstract: No abstract text available
    Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 08-Apr-05

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11

    Si2309DS

    Abstract: Si2309DS-T1
    Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236


    Original     		PDF Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 Si2309DS-T1-GE3 11-Mar-11

    Si2302ADS

    Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE
    Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 11-Mar-11 2A MARKING CODE

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05

    Si2307CDS

    Abstract: No abstract text available
    Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices


    Original     		PDF Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    4614 mosfet

    Abstract: Si2304DDS A 0412 MOSFET MOSFET 4614 AN609
    Text: Si2304DDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2304DDS AN609, 29-Jul-09 4614 mosfet A 0412 MOSFET MOSFET 4614 AN609

    Si2305DS-T1-E3

    Abstract: SI2305DS-T1 / A5 Si2305DS Si2305DS-T1
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT


    Original     		PDF Si2305DS O-236 OT-23) Si2305DS-T1 Si2305DS-T1-E3 08-Apr-05 SI2305DS-T1 / A5

    SI2302

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2302 Features • Halogen free available upon request by adding suffix "-HF" • 20V,3.0A, RDS ON =55m¡@VGS=4.5V


    Original     		PDF SI2302 OT-23 OT-23 SI2302

    Si2308BDS-T1-GE3

    Abstract: si2308bds
    Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 Si2308BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


    Original     		PDF Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11

    SI2306BDS-T1-E3

    Abstract: Si2306BDS SI2306DS SI2306DS-T1-E3 120r Si2306DS-T1
    Text: Specification Comparison Vishay Siliconix Si2306BDS vs. Si2306DS Description: N-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2306BDS-T1-E3 Replaces Si2306DS-T1-E3 Si2306BDS-T1-E3 Replaces Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2306BDS Si2306DS OT-23 Si2306BDS-T1-E3 Si2306DS-T1-E3 Si2306DS-T1 06-Nov-06 120r

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF SI2304 OT-23 OT-23

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 S-50694--Rev. 18-Apr-05 Si2301BDS SPICE Device Model

    si2301

    Abstract: "MARKING CODE S1" si2301 sot-23
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2301 Features • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V


    Original     		PDF SI2301 OT-23 si2301 "MARKING CODE S1" si2301 sot-23

    Si2303DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2303DS P-Channel Enhancement Mode MOSFETs Characteristics • • • • • Applicable Over a -55 to 125 o C Temperature Range • Models Gate Charge, Transient and Diode Reverse P-Channel Vertical DMOS Macro-Model Subcircuit Level 3 MOS


    Original     		PDF Si2303DS SI2303DS

    SI2304DS marking code SOT-23

    Abstract: A4* marking code A4 MARKING CODE
    Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )


    OCR Scan     		PDF 2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE