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    SI2309DS-T1-GE3 Search Results

    SI2309DS-T1-GE3 Result Highlights (5)

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    SI2309DS-T1-GE3 Price and Stock

    Vishay Intertechnologies SI2309DS-T1-GE3

    P Ch Mosfet; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.25A; Drain Source Voltage Vds:-60V; On Resistance Rds(On):275Mohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W Rohs Compliant: Yes |Vishay SI2309DS-T1-GE3
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    Newark SI2309DS-T1-GE3 Reel 3,000
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    SI2309DS-T1-GE3 Cut Tape 3,000
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