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    SI1416EDH Price and Stock

    Vishay Siliconix SI1416EDH-T1-GE3

    MOSFET N-CH 30V 3.9A SOT-363
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    DigiKey SI1416EDH-T1-GE3 Reel 45,000 3,000
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    SI1416EDH-T1-GE3 Cut Tape 438 1
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    SI1416EDH-T1-GE3 Digi-Reel 1
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    RS SI1416EDH-T1-GE3 Bulk 20
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    ES Components SI1416EDH-T1-GE3
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    Vishay Siliconix SI1416EDH-T1-BE3

    MOSFET N-CH 30V 3.9A/3.9A SC70-6
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    DigiKey SI1416EDH-T1-BE3 Reel 3,000 3,000
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    SI1416EDH-T1-BE3 Cut Tape 262 1
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    SI1416EDH-T1-BE3 Digi-Reel 1
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    Vishay Intertechnologies SI1416EDH-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI1416EDH-T1-GE3)
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    Avnet Americas SI1416EDH-T1-GE3 Reel 39,000 6 Weeks 3,000
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    Mouser Electronics SI1416EDH-T1-GE3 590,591
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    Verical SI1416EDH-T1-GE3 12,000 3,000
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    SI1416EDH-T1-GE3 3,000 3,000
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    SI1416EDH-T1-GE3 2,895 157
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    Arrow Electronics SI1416EDH-T1-GE3 12,000 16 Weeks 3,000
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    SI1416EDH-T1-GE3 3,000 6 Weeks 3,000
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    Newark SI1416EDH-T1-GE3 Reel 3,000
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    SI1416EDH-T1-GE3 Reel 3,000
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    TTI SI1416EDH-T1-GE3 Reel 165,000 3,000
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    Avnet Asia SI1416EDH-T1-GE3 18 Weeks 3,000
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    EBV Elektronik SI1416EDH-T1-GE3 17 Weeks 3,000
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    New Advantage Corporation SI1416EDH-T1-GE3 9,000 1
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    Vishay Intertechnologies SI1416EDH-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI1416EDH-T1-BE3)
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    Avnet Americas SI1416EDH-T1-BE3 Reel 16 Weeks 3,000
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    Mouser Electronics SI1416EDH-T1-BE3 63,000
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    Newark SI1416EDH-T1-BE3 Cut Tape 3,000 1
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    SI1416EDH-T1-BE3 Reel 3,000
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    TTI SI1416EDH-T1-BE3 Reel 54,000 3,000
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    EBV Elektronik SI1416EDH-T1-BE3 17 Weeks 3,000
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    SI1416EDH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI1416EDH-T1-BE3 Vishay Siliconix MOSFET N-CH 30V 3.9A/3.9A SC70-6 Original PDF
    SI1416EDH-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 3.9A SOT-363 Original PDF

    SI1416EDH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1416EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1416EDH AN609, 9774u 9125m 8816m 6885u 1252u 3841m 9719u 28-Mar-11

    67580

    Abstract: high current sot-363 p-channel mosfet
    Text: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1416EDH 2002/95/EC OT-363 SC-70 Si1416EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67580 high current sot-363 p-channel mosfet

    67580

    Abstract: si1416
    Text: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1416EDH 2002/95/EC OT-363 SC-70 Si1416EDH-T1-GE3 11-Mar-11 67580 si1416

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1416EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1416EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1416EDH 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1416EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1416EDH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836