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    SI1411 Search Results

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    SI1411 Price and Stock

    Vishay Siliconix SI1411DH-T1-GE3

    MOSFET P-CH 150V 420MA SOT363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1411DH-T1-GE3 Cut Tape 5,651 1
    • 1 $1.29
    • 10 $0.812
    • 100 $1.29
    • 1000 $0.37933
    • 10000 $0.37933
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    SI1411DH-T1-GE3 Digi-Reel 5,651 1
    • 1 $1.29
    • 10 $0.812
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    • 1000 $0.37933
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    SI1411DH-T1-GE3 Reel 3,000
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    Vishay Siliconix SI1411DH-T1-BE3

    MOSFET P-CH 150V 420MA SC70-6
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    DigiKey SI1411DH-T1-BE3 Cut Tape 803 1
    • 1 $1.29
    • 10 $0.812
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    • 1000 $0.37933
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    SI1411DH-T1-BE3 Digi-Reel 803 1
    • 1 $1.29
    • 10 $0.812
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    • 1000 $0.37933
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    SI1411DH-T1-BE3 Reel 3,000
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    Vishay Siliconix SI1411DH-T1-E3

    MOSFET P-CH 150V 420MA SC70-6
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    DigiKey SI1411DH-T1-E3 Cut Tape
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    SI1411DH-T1-E3 Digi-Reel 1
    • 1 $0.87
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    SI1411DH-T1-E3 Reel
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    Vishay Intertechnologies SI1411DH-T1-BE3

    P-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SI1411DH-T1-BE3)
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    Avnet Americas SI1411DH-T1-BE3 Reel 3,000
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    Newark SI1411DH-T1-BE3 Reel 3,000
    • 1 $0.403
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    • 10000 $0.365
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    Bristol Electronics SI1411DH-T1-BE3 6,000
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    TTI SI1411DH-T1-BE3 Reel 15,000 3,000
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    Vishay Intertechnologies SI1411DH-T1-GE3

    P-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SI1411DH-T1-GE3)
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    Avnet Americas SI1411DH-T1-GE3 Reel 13 Weeks 3,000
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    Mouser Electronics SI1411DH-T1-GE3 21,900
    • 1 $0.85
    • 10 $0.672
    • 100 $0.471
    • 1000 $0.345
    • 10000 $0.286
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    Verical SI1411DH-T1-GE3 2,927 21
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    Arrow Electronics SI1411DH-T1-GE3 Cut Strips 2,927 13 Weeks 1
    • 1 $0.4005
    • 10 $0.3815
    • 100 $0.3365
    • 1000 $0.2936
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    Newark SI1411DH-T1-GE3 Cut Tape 2,850 1
    • 1 $0.788
    • 10 $0.704
    • 100 $0.537
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    SI1411DH-T1-GE3 Reel 3,000
    • 1 $0.403
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    • 100 $0.403
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    • 10000 $0.365
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    TTI SI1411DH-T1-GE3 Reel 3,000 3,000
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    TME SI1411DH-T1-GE3 1
    • 1 $0.837
    • 10 $0.598
    • 100 $0.478
    • 1000 $0.435
    • 10000 $0.435
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    Component Electronics, Inc SI1411DH-T1-GE3 2,851
    • 1 $5.31
    • 10 $5.31
    • 100 $3.98
    • 1000 $3.45
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    EBV Elektronik SI1411DH-T1-GE3 14 Weeks 3,000
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    SI1411 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si1411DH Vishay P-Channel Power MOSFET Original PDF
    SI1411DH-T1-BE3 Vishay Siliconix MOSFET P-CH 150V 420MA SC70-6 Original PDF
    SI1411DH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 420MA SC70-6 Original PDF
    SI1411DH-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 150V 420MA SC70 Original PDF

    SI1411 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1411DH

    Abstract: si1411dh-t1-e3
    Text: Si1411DH Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 2.6 at VGS = - 10 V - 0.52 2.7 at VGS = - 6 V - 0.51 Qg (Typ.) 4.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


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    PDF Si1411DH SC-70 2002/95/EC OT-363 SC-70 Si1411DH-T1-E3 Si1411DH-T1-GE3 18-Jul-08

    Si1411DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1411DH Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1411DH 18-Jul-08

    Si1411DH

    Abstract: RthJA
    Text: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


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    PDF Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 18-Jul-08 RthJA

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1411DH www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    PDF Si1411DH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    9349

    Abstract: AN609 Si1411DH
    Text: Si1411DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si1411DH AN609 12-Mar-07 9349

    Si1411DH

    Abstract: SI1411
    Text: SPICE Device Model Si1411DH Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1411DH netw14 S-62426Rev. 04-Dec-06 SI1411

    Si1411DH

    Abstract: marking code G SI1411DH-T1-E3
    Text: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original
    PDF Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 08-Apr-05 marking code G SI1411DH-T1-E3

    Si1411DH

    Abstract: No abstract text available
    Text: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original
    PDF Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 S-50461--Rev. 14-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: Si1411DH Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 2.6 at VGS = - 10 V - 0.52 2.7 at VGS = - 6 V - 0.51 Qg (Typ.) 4.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


    Original
    PDF Si1411DH SC-70 2002/95/EC OT-363 SC-70 Si1411DH-T1-E3 Si1411DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si1411DH Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 2.6 at VGS = - 10 V - 0.52 2.7 at VGS = - 6 V - 0.51 Qg (Typ.) 4.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


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    PDF Si1411DH SC-70 2002/95/EC OT-363 SC-70 Si1411DH-T1-E3 Si1411llectual 18-Jul-08

    CTX03-18774

    Abstract: CTX03-18775 TRANSISTOR N3 CTX03 transformer EP10 GRM1885C1H100H CTX031 MAX5974A MAX5974AETE 0826-1X1T-GH-F
    Text: 19-5880; Rev 0; 5/11 MAX5974A Evaluation Kit The EV kit features a galvanically isolated 25W, 600kHz switching frequency forward DC-DC converter using the IC. The circuit achieves high efficiency up to 92% VIN = +42V using a coupled-inductor forward DC-DC


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    PDF MAX5974A 600kHz MAX5969B Figure10. MAX5974A CTX03-18774 CTX03-18775 TRANSISTOR N3 CTX03 transformer EP10 GRM1885C1H100H CTX031 MAX5974AETE 0826-1X1T-GH-F

    wurth 744

    Abstract: ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40
    Text: Maxim > Design support > App notes > Basestations/Wireless Infrastructure > APP 5043 Maxim > Design support > App notes > Hot-Swap and Power Switching Circuits > APP 5043 Maxim > Design support > App notes > Power-Supply Circuits > APP 5043 Keywords: powered device, PD, Power over Ethernet, PoE, IEEE 802.3af, IEEE 802.3at, Class 2 PD, Class 3 PD, IP phones, IP


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    PDF com/an5043 AN5043, APP5043, Appnote5043, wurth 744 ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    CTX03-18842-R

    Abstract: MAX5974C B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842
    Text: 19-5262; Rev 0; 11/11 MAX5974C Evaluation Kit Evaluates: MAX5974C General Description The EV kit features a galvanically isolated 25W, 250kHz switching-frequency, active-clamped, synchronous-rectified forward DC-DC converter using the IC. The device circuit achieves high efficiency up to 93.5% using a


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    PDF MAX5974C MAX5974C 250kHz MAX5969B Products10 CTX03-18842-R B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477