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    Vishay Siliconix SI1315DL-T1-GE3

    MOSFET P-CH 8V 900MA SOT323
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    Vishay Intertechnologies SI1315DL-T1-GE3

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    Bristol Electronics SI1315DL-T1-GE3 600
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    SI1315 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI1315DL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 900MA SC70-3 Original PDF

    SI1315 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si1315DL-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si1315DL-GE3 AN609, 7709u 6995u 3040m 6752m 2430u 4802u 3505u 5404m

    SI1315DL

    Abstract: lj marking
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original
    PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. lj marking

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original
    PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 11-Mar-11

    si1315

    Abstract: Si1315DL
    Text: SPICE Device Model Si1315DL www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si1315DL 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1315

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original
    PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()


    Original
    PDF Si1315DL 2002/95/EC OT-323 SC-70 Si1315DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836