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    SI1034CX Search Results

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    SI1034CX Price and Stock

    Vishay Siliconix SI1034CX-T1-GE3

    MOSFET 2N-CH 20V 0.61A SC89
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    DigiKey SI1034CX-T1-GE3 Reel 57,000 3,000
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    SI1034CX-T1-GE3 Cut Tape 6,382 1
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    SI1034CX-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SI1034CX-T1-GE3

    Transistor MOSFET Array Dual N-CH 20V 0.61A 6-Pin SC-89 T/R - Product that comes on tape, but is not reeled (Alt: 26AK9914)
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    Avnet Americas SI1034CX-T1-GE3 Ammo Pack 17 Weeks, 3 Days 1
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    SI1034CX-T1-GE3 Ammo Pack 17 Weeks, 5 Days 1
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    SI1034CX-T1-GE3 Reel 6 Weeks 3,000
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    Mouser Electronics SI1034CX-T1-GE3 37,749
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    Verical SI1034CX-T1-GE3 18,000 3,000
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    Arrow Electronics SI1034CX-T1-GE3 18,000 6 Weeks 3,000
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    Newark SI1034CX-T1-GE3 Reel 9,000 3,000
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    SI1034CX-T1-GE3 Cut Tape 975 1
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    SI1034CX-T1-GE3 Cut Tape 245 1
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    SI1034CX-T1-GE3 Reel 3,000
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    SI1034CX-T1-GE3 Reel 3,000
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    Quest Components SI1034CX-T1-GE3 1,440
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    TTI SI1034CX-T1-GE3 Reel 39,000 3,000
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    TME SI1034CX-T1-GE3 1
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    Avnet Asia SI1034CX-T1-GE3 8 Weeks 3,000
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    Chip1Stop SI1034CX-T1-GE3 18,000
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    EBV Elektronik SI1034CX-T1-GE3 3,000 13 Weeks 3,000
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    Texas Instruments SI1034CX-T1-GE3

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    Bristol Electronics SI1034CX-T1-GE3 50 12
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    Quest Components SI1034CX-T1-GE3 40
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    Vishay Huntington SI1034CX-T1-GE3

    Trans MOSFET N-CH 20V 0.61A 6-Pin SC-89 T/R / MOSFET 2N-CH 20V SC89-6
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    Win Source Electronics SI1034CX-T1-GE3 17,465
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    SI1034CX Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI1034CX-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V SC89-6 Original PDF

    SI1034CX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1034CX-T1-GE3

    Abstract: SC-89-6
    Text: Specification Comparison Vishay Siliconix Si1034CX vs. Si1034X Description: Package: Pin Out: Dual N-Channel, 20 V D-S MOSFET SC89-6 Identical Part Number Replacements: Si1034CX-T1-GE3 replaces Si1034X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si1034CX Si1034X SC89-6 Si1034CX-T1-GE3 Si1034X-T1-GE3 23-Mar-11 SC-89-6

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		PDF Si1034CX SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		PDF Si1034CX SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1034CX 2002/95/EC SC-89 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1034CX_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1034CX AN609, 10-Feb-11 1338u 4578u 1935m 4590m

    SI1034CX

    Abstract: No abstract text available
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET


    Original     		PDF Si1034CX SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SOT563F

    Abstract: Si1034CX-T1-GE3
    Text: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1034CX 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SOT563F Si1034CX-T1-GE3

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836