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    Sirenza Microdevices SHF-0289Z

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    Component Electronics, Inc SHF-0289Z 3
    • 1 $3.85
    • 10 $3.85
    • 100 $2.88
    • 1000 $2.5
    • 10000 $2.5
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    SHF0289 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SHF-0289 RF Micro Devices RF FETs, Discrete Semiconductor Products, IC HFET ALGAAS/GAAS 1W SOT-89 Original PDF
    SHF-0289 Sirenza Microdevices DC-3 GHz, 1.0 Watt GaAs HFET Original PDF
    SHF-0289 Sirenza Microdevices MESFET/TempFET/HEMT - Datasheet Reference Original PDF
    SHF-0289 Stanford Microdevices DC-3 GHz, 1.0 watt GaAs HFET Original PDF
    SHF-0289Z RF Micro Devices RF FETs, Discrete Semiconductor Products, IC HFET ALGAAS/GAAS 1W SOT-89 Original PDF

    SHF0289 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SHF-0289Z

    Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
    Text: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves


    Original     		PDF SHF0289Z 05GHz SHF0289Z OT-89 30dBm 200mA. 43dBm SHF-0289Z GaAS fet sot89 SHF0289ZSQ

    FR4 dielectric constant 4.6

    Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b
    Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original     		PDF SHF-0289 SHF-0289 30dBm 250mA. EDS-101241 FR4 dielectric constant 4.6 CD268 Stanford SHF-0289 SHF 189 MCH18 822 a b

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    SHF-0289

    Abstract: SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89
    Text: SHF-0289 Z SHF-0289(Z) 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)


    Original     		PDF SHF-0289 05GHz OT-89 30dBm 200mA. 43dBm SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89

    Untitled

    Abstract: No abstract text available
    Text: Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original     		PDF SHF-0289 30dBm 200mA. 200mA) SHF-0289 05area SHF-0x89 EDS-101241

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original     		PDF

    Stanford SHF-0289

    Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
    Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original     		PDF SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189

    SHF-0289 App Note AN-032

    Abstract: SHF-0289 an032 HFET
    Text: Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original     		PDF SHF-0289 31dBm 250mA. SHF-0289 SHF-0x89 EDS-101241 SHF-0289 App Note AN-032 an032 HFET

    SHF-0289Z

    Abstract: SHF-0289 SHF0289Z SHF-0289 App Note AN-032 s-parameter file of SHF-0289 by Sirenza 140C AN032
    Text: Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original     		PDF SHF-0289 SHF-0289 SHF-0289Z 30dBm 200mA. SHF-0x89 EDS-101241 SHF-0289Z SHF0289Z SHF-0289 App Note AN-032 s-parameter file of SHF-0289 by Sirenza 140C AN032

    SHF-0289

    Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S
    Text: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


    Original     		PDF AN-032 SHF-0289 EAN-101799 MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S

    SHF-0289

    Abstract: SHF-0289Z amplifier shf jesd22-a104b SHF-0189 SHF-0189Z JESD22-A113C GaAS fet sot89 JESD22-A114 reliability testing report
    Text: Reliability Qualification Report SHF-xx89 - SnPb Plated SHF-xx89Z - Matte Sn, RoHS Compliant Products Qualified SHF-0189 SHF-0289 SHF-0189Z SHF-0289Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


    Original     		PDF SHF-xx89 SHF-xx89Z SHF-0189 SHF-0289 SHF-0189Z SHF-0289Z RQR-105193 SHF-xx89/SHF-xx89Z JESD22-A108B SHF-0289 SHF-0289Z amplifier shf jesd22-a104b JESD22-A113C GaAS fet sot89 JESD22-A114 reliability testing report

    SHF-0289

    Abstract: SHF 189 FR4 dielectric constant vs temperature
    Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original     		PDF SHF-0289 30dBm 250mA. EDS-101241 SHF 189 FR4 dielectric constant vs temperature

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    SHF-0189

    Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
    Text: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


    Original     		PDF AN-031 SHF-0189 EAN-101798 SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C Vds=8V, Idq=250mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz


    Original     		PDF SHF-0289 250mA) MCH18 LL1608- FH15NT

    pnp-1500-p22

    Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1Stanford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ mance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology im proves breakdown voltage while m inim izing Schottky


    OCR Scan     		PDF SHF-0289 SHF-0289 30dBm 300mA.

    lm 293 iz 5

    Abstract: T-522A shf0289 t 522
    Text: H Siali ford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ m ance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology im proves breakdown voltage while minimizing Schottky


    OCR Scan     		PDF SHF-0289 30dBm 300mA. lm 293 iz 5 T-522A shf0289 t 522

    0289

    Abstract: Stanford SHF-0289
    Text: 1Stanford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ mance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology j im proves breakdown voltage while minimizing Schottky


    OCR Scan     		PDF SHF-0289 30dBm 300mA. SHF-0289 0289 Stanford SHF-0289