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    SGB30N60 Price and Stock

    Infineon Technologies AG SGB30N60ATMA1

    IGBT 600V 41A 250W TO263-3
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    DigiKey SGB30N60ATMA1 Reel
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    Siemens SGB30N60

    41 A, 600 V, N-CHANNEL IGBT, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SGB30N60 70
    • 1 $4.5675
    • 10 $2.2838
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    Infineon Technologies AG SGB30N60

    Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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    ComSIT USA SGB30N60 1,000
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    SGB30N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGB30N60 Infineon Technologies Fast IGBT in NPT Technology Original PDF
    SGB30N60 Infineon Technologies IGBT Discretes; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 25°: 41.0 A; IC(max) @ 100°: 30.0 A Original PDF
    SGB30N60 Infineon Technologies 30A 600V TO263AB SMD IGBT Original PDF
    SGB30N60 Siemens Original PDF
    SGB30N60ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO263-3 Original PDF

    SGB30N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGB30N60, SGW30N60 O-220AB Q67041-A4713-A2 SGB30N60 O-263AB Q67041-A4713-A4 O-247AC PDF

    g30n60

    Abstract: G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB30N60 PG-TO-263-3-2 O-263AB) G30N60 g30n60 G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ PDF

    30A20V

    Abstract: Q67040-S4237 SGB30N60 SGP30N60 SGW30N60
    Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGB30N60, SGW30N60 O-220AB Q67041-A4713-A2 SGB30N60 O-263AB Q67041-A4713-A4 O-247AC 30A20V Q67040-S4237 SGB30N60 SGP30N60 SGW30N60 PDF

    Q67040-A4463

    Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
    Text: SGP30N60 SGB30N60, SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGB30N60, SGW30N60 O-220AB Q67040-A4463 SGB30N60 O-263AB Q67041-A4713 O-247AC Q67040-A4463 Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60 PDF

    G30N60

    Abstract: G30N60 IGBT JESD-022
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB30N60 PG-TO-263-3-2 O-263AB) SGB30N60 G30N60 G30N60 IGBT JESD-022 PDF

    G30N60

    Abstract: copper bond wire infineon G30N60 IGBT
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB30N60 P-TO-263-3-2 O-263AB) SGB30N60 G30N60 copper bond wire infineon G30N60 IGBT PDF

    G30N60

    Abstract: No abstract text available
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB30N60 P-TO-263-3-2 O-263AB) G30N60 G30N60 PDF

    SGP30N60

    Abstract: BUP603D Q67040-S4237 SGB30N60 SGW30N60 SGP30N60 3 SC35015
    Text: Preliminary data SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:


    Original     		SGP30N60, SGB30N60, SGW30N60 SGP30N60 O-220AB Q67041-A4713-A2 SGB30N60 O-263AB Q67041-A4713-A3 SGP30N60 BUP603D Q67040-S4237 SGB30N60 SGW30N60 SGP30N60 3 SC35015 PDF

    Q67040-S4237

    Abstract: sgw30n60
    Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGB30N60, SGW30N60 SGB30N60 SGW30N60 O-220AB O-263AB O-247AC Q67040-A4463 Q67040-S4237 PDF

    G30N60

    Abstract: G30N60 IGBT equivalent to g30n60
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB30N60 SGB30N60 G30N60 G30N60 IGBT equivalent to g30n60 PDF

    Q67040-A4463

    Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
    Text: SGP30N60, SGB30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60, SGB30N60 SGW30N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 P-TO-247-3-1 O-263AB) O-247AC) O-220AB Q67040-A4463 Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGB30N60, SGW30N60 O-220AB Q67041-A4713-A2 SGB30N60 O-263AB Q67041-A4713-A4 O-247AC PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


    Original     		B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60 PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D PDF

    SIPC69N60C3

    Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
    Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78


    Original     		SDP06S60 SDP04S60 SDB10S30 BTS555 BTS550P BTS650P BTS114A BSP78 BTS115A BTS134D SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822 PDF

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan     		SGP30N60, SGB30N60, SGW30N60 O-220AB O-263AB SGP30N60 Q67041-A4713-A2 SGB30N60 PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF