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    SGP30N60 Price and Stock

    Infineon Technologies AG SGP30N60XKSA1

    IGBT 600V 41A 250W TO263
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    DigiKey SGP30N60XKSA1 Tube
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    Avnet Americas SGP30N60XKSA1 Tube 4 Weeks 1
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    Rochester Electronics SGP30N60XKSA1 50 1
    • 1 $1.75
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    • 100 $1.65
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    Infineon Technologies AG SGP30N60HSXKSA1

    IGBT 600V 41A 250W TO220-3
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    Infineon Technologies AG SGP30N60

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    Quest Components SGP30N60 41
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    SGP30N60 33
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    ComSIT USA SGP30N60 500
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    SGP30N60 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SGP30N60 Infineon Technologies Fast IGBT in NPT Technology Original PDF
    SGP30N60 Infineon Technologies 30A 600V TO220AB IGBT Original PDF
    SGP30N60 Unknown IGBT ULTRAFAST TO-220 Original PDF
    SGP30N60 Siemens IGBT Original PDF
    SGP30N60 Siemens Original PDF
    SGP30N60HS Infineon Technologies 30A 600V TO220 IGBT Original PDF
    SGP30N60HS Infineon Technologies High Speed IGBT in NPT-technology Original PDF
    SGP30N60HSXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO220-3 Original PDF
    SGP30N60XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO263 Original PDF

    SGP30N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7262-S

    Abstract: SGP30N60 SIGC25T60SNC
    Text: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn


    Original     		PDF SIGC25T60SNC SGP30N60 Q67041-A4667A001 Q67041-A4667A002 7262-S, 7262-S SGP30N60 SIGC25T60SNC

    SGP30N60HS

    Abstract: SGW30N60HS 3UAT
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS P-TO-220-3-1 O-220AB) P-TO-247-3-1 O-247AC) O-220AB Q67040-S4500 SGP30N60HS SGW30N60HS 3UAT

    Untitled

    Abstract: No abstract text available
    Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGB30N60, SGW30N60 O-220AB Q67041-A4713-A2 SGB30N60 O-263AB Q67041-A4713-A4 O-247AC

    Untitled

    Abstract: No abstract text available
    Text: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn


    Original     		PDF SIGC25T60SNC SGP30N60 Q67041-A4667A001 Q67041-A4667A002 7262-S,

    G15N60

    Abstract: No abstract text available
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW30N60 G15N60

    g30n60hs

    Abstract: g30n60 SGW30N60HS 1A20A
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60 1A20A

    SKW30N60

    Abstract: 02449 SGP30N60
    Text: Preliminary IGBT same as SGP30N60 SKW30N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


    Original     		PDF SGP30N60 SKW30N60 O-247AC Q67040-S4244 Aug-99 SKW30N60 02449 SGP30N60

    7262-S

    Abstract: s7262s
    Text: Preliminary SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE This chip is used for: • SGP30N60 G Applications: • drives


    Original     		PDF SIGC25T60SNC SGP30N60 SIGC25T60SNC Q67041-A4667sawn Q67041-A4667unsawn 7262-S, 7262-S s7262s

    SGW30N60HS

    Abstract: SGP30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS P-TO-220-3-1 O-220AB) P-TO-247-3-1 O-247AC) O-220AB Q67040-S4500 SGW30N60HS SGP30N60HS

    SGP30N60HS

    Abstract: SIGC25T60UN
    Text: SIGC25T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SGP30N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC25T60UN


    Original     		PDF SIGC25T60UN SGP30N60HS Q67041-A4667A001 7262-U, SGP30N60HS SIGC25T60UN

    30A20V

    Abstract: Q67040-S4237 SGB30N60 SGP30N60 SGW30N60
    Text: SGP30N60 SGB30N60, SGW30N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGB30N60, SGW30N60 O-220AB Q67041-A4713-A2 SGB30N60 O-263AB Q67041-A4713-A4 O-247AC 30A20V Q67040-S4237 SGB30N60 SGP30N60 SGW30N60

    SGP30N60

    Abstract: SIGC25T60SNC
    Text: SIGC25T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP30N60 G Applications: • drives Chip Type VCE ICn


    Original     		PDF SIGC25T60SNC SGP30N60 Q67041-A4667A001 Q67041-A4667A002 7262-S, SGP30N60 SIGC25T60SNC

    G30N60

    Abstract: G30N60 IGBT g30n60 infineon SGW30N60 PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 SGW30N60 G30N60 G30N60 IGBT g30n60 infineon PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A

    g30n60

    Abstract: equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW30N60 g30n60 equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21

    Q67040-A4463

    Abstract: Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60
    Text: SGP30N60 SGB30N60, SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGB30N60, SGW30N60 O-220AB Q67040-A4463 SGB30N60 O-263AB Q67041-A4713 O-247AC Q67040-A4463 Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60 SGW30N60

    g30n60

    Abstract: PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 G30N60 PG-TO-220-3-1ain g30n60 PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet

    G30N60HS

    Abstract: SGP30N60HS G30N60h SGW30N60HS G30N60 g30n60hs pspice high frequency igbt G30N60hs IGBT PG-TO-247-3 PG-TO-220-3-1 PG-TO-247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 G30N60HS SGW30N60HS G30N60HS SGP30N60HS G30N60h G30N60 g30n60hs pspice high frequency igbt G30N60hs IGBT PG-TO-247-3 PG-TO-220-3-1 PG-TO-247-3-21

    SGP30N60

    Abstract: SGP30N60 3 BUP603D
    Text: SGP30N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP30N60 600V 30A TO-220 AB Q67040-A . . . . Maximum Ratings


    Original     		PDF SGP30N60 O-220 Q67040-A BUP603D Apr-08-1998 SGP30N60 SGP30N60 3 BUP603D

    g30N60

    Abstract: G30N60 IGBT g30n60 infineon equivalent to g30n60 SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 1000v 30a
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 G30N60 SGW30N6ntain g30N60 G30N60 IGBT g30n60 infineon equivalent to g30n60 SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 1000v 30a

    g30n60hs

    Abstract: G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 G30N60HS g30n60hs G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21

    g30n60hs

    Abstract: g30n60 SGW30N60HS SGP30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60

    g30n60hs

    Abstract: g30n60 RG111 SGW30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW30N60HS g30n60hs g30n60 RG111

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC25T60UN IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type SIGC25T60UN VCE 600V This chip is used for: • SGP30N60HS G


    Original     		PDF SIGC25T60UN SGP30N60HS Q67041-A4667sawn 7262-U,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan     		PDF SGP30N60, SGB30N60, SGW30N60 O-220AB O-263AB SGP30N60 Q67041-A4713-A2 SGB30N60