SG600EX21
Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
Text: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01
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DS5549
DS5549-1
1501-25A01
DG406BP25
2001-25A01
DG646BH25
2003-45A01
DG648BH45
2501-25A01
SG600EX21
SG600R21
FG2000DV-90
FG2000DV90
westcode cross reference
SG1000R23
SG1000EX23
FG1000AH
SG700EX22
DG406BP18
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CS thyristor
Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
Text: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment
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SGB00GXH25
SG1500GXH25
SG3000GXH25
SGR3000EX26
SGR3000GXH26
SG800EX25*
SG1400EX25"
SHR400R22
SL1500GX22
SL2500JX21
CS thyristor
Thyristor CS 165
SHR400
cs50n
SL3000GX22
2500v
SHR400R22
reverse conducting thyristor
4500v
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SG3000GXH29
Abstract: SG3000GXH 13-108D1A
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent
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SG3000GXH29
SG3000GXH29)
SG3000GXH29
SG3000GXH
13-108D1A
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SG3000GXH29
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us
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SG3000GXH23G
000V//
--25A,
SG3000GXH29.
SG3000GXH29
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm = 4500V Note 1 Repetitive Peak Reverse Voltage : V r r m = 4000V R.M.S On-State Current : IT(RMS) = 800A
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SG3000GXH25
S120MAX.
300mA
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sg3000gx
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG3000GXH25
10ms16000
--2500A
--3000V
300mA
--300A
sg3000gx
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SG3000GXH24
Abstract: Gate Turn-off Thyristor sg3000gxh24
Text: TO SH IBA SG3000GXH24 T O S H IB A GATE T U R N -O F F THY RISTOR SG3000GXH24 INVERTER APPLICA TION Repetitive Peak Off-State Voltage : V d r m = 4500 V R.M.S On-State Current : It RMS = 1200 A Peak Turn-Off Current : It GQM = 3000 A Critical Rate of Rise of On-State Current : di / dt = 400 A / jus
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SG3000GXH24
SG3000GXH24
Gate Turn-off Thyristor sg3000gxh24
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4500v
Abstract: SG3000GXH23G SG3000GXH29
Text: TOSHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VdRM = 4500V R.M.S On-State Current IT RMS = 1200A Peak Turn-Off Current ItGQM —3000A Critical Rate of Rise of On-State Current : di/dt = 400A/ jus
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SG3000GXH23G
00A//Â
000V//Â
10ms-Width
sg3000gxh29.
4500v
SG3000GXH23G
SG3000GXH29
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toshiba gto
Abstract: SG3000GXH23 SG3000GXH29
Text: TO SH IBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Repetitive Peak Off-State Voltage V d RM = 4500 V R.M.S On-State Current ÏT RMS = 1200 A Peak Turn-Off Current :TGQM = 3000 A Critical Rate of Rise of On-State Current : d i/ dt = 400 A//us
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SG3000GXH23
toshiba gto
SG3000GXH23
SG3000GXH29
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SG3000GXH24
Abstract: Gate Turn-off Thyristor sg3000gxh24
Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA S G 3 0 0 0 G XH 2 4 J Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current
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SG3000GXH24
SG3000GXH24
Gate Turn-off Thyristor sg3000gxh24
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SG3000GXH29
Abstract: LT10
Text: TOSHIBA SG3000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH29 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d RM —4500V R.M.S On-State Current : It RMS = 1200A Peak Turn-Off Current : It GQM —3000A Critical Rate of Rise of On-State Current : di/dt= 400A / jus
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SG3000GXH29
SG3000GXH29
LT10
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SG3000GXH25
Abstract: Gate Turn-off Thyristor
Text: TO SH IBA TENTATIVE INVERTER APPLICATION SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR S G 3 0 0 0 G X H 25 Unit in mm Repetitive Peak Off-State Voltage : VDRM - 4500 V Note 1 Repetitive Peak Reverse Voltage • VRRM = 4000 V R.M.S On-State Current • lT (RMS) = 800 A
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SG3000GXH25
900Y//us
SG3000GXH25
Gate Turn-off Thyristor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent
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SG3000GXH29
SG3000GXH29)
SG3000GXH29
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23 TENTATIVE TOSHIBA GATE TURN-OFF THYRISTOR < ;r ;3 n n n r ; Y H 73 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current ÌT RMS = 1200A Peak Turn-Off Current ITGQM —3000A Critical Rate of Rise of On-State Current : d i/d t = 400A /(lus
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SG3000GXH23
--3000A
1250C
--24V,
3000Ai
450QV,
SG3000GXH29.
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SG3000GXH24
Abstract: GP-850 QA3000
Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA SG3000GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current : It GQM = 3000A
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SG3000GXH24
SG3000GXH24)
SG3000GXH24
GP-850
QA3000
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Unit in mm Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A i T G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us
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SG3000GXH23
000V//
--25A,
ITGQ-3000A,
SG3000GXH29.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG3000GXH24 DATA SG3000GXH24 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current : It GQM = 3000A
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SG3000GXH24
SG3000GXH24)
SG3000GXH24
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SG3000GXH29
Abstract: No abstract text available
Text: SEMICONDUCTOR T O SH IB A TECHNICAL TOSHIBA GATE TURN-OFF THYRISTOR. SG3000GXH29 DATA S G 3 0 0 0 G XH 2 9 J Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current
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SG3000GXH29
SG3000GXH29
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sm4500
Abstract: Gate Turn-off Thyristor sg3000gxh24 SG3000GXH24
Text: SG3000GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH24 SG3000GXH24 Unit in mm INVERTER APPLICATION RepetiUve Peak Off-State Voltage : 4500V R.M.S On-State Current : I t (R M S ) = 1200A Peak Turn-Off Current : I t GQM = 3000A Critical Rate of Rise of On-State Current : d i/d t= 4 0 0 A ///s
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SG3000GXH24
SG3000GXH24)
sm4500
Gate Turn-off Thyristor sg3000gxh24
SG3000GXH24
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TOSHIBA FL INVERTER
Abstract: SG3000GXH23 n42a
Text: TO SHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3QQ0GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current 1T RMS = 1200A Peak Turn-Off Current ITGQM —3000A Critical Rate of Rise of On-State Current : d i/d t = 400A /(lus
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SG3000GXH23G
SG3QQ0GXH23G
--3000A
--24V,
3000Ai
Tj--125
30Q0V,
SG3000GXH29.
TOSHIBA FL INVERTER
SG3000GXH23
n42a
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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SG600GXH26
SG800W24
SG1000GXH26
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2000GXH26
SG2200GXH24
SG2500EX24
snubber diode
SG2500GX
gto sg3000gxh24
SG3000GXH24
free diode
1000GXHH22
800EXH21
SG3000GXH
100GXHH21
SG4000GXH26G
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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SG1200EX24
SG1500EX24
SG2000EX24
SG2200GXH24
SG3000EX24
SG3000GXH24
SG3000JX24
SG2000GXH26
SG800GXH24
SG1000GXH26
500EXH21
100gxhh21
800A 75m
gate turn off thyristors
TOSHIBA 100GXHH21
800GXHH21
800GX
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100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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SG2500EX24
SG3000EX24
SG4000EX26
SG2000R24
SG2000U24
SG2000W24
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
100EXG11
500EXH21
200FXG12
200FXH12
800GXHH21
gto 200A
100exh
gto 300A
100GXHH21
4500v
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2200GXH24
SG3000EX24
SGR3000EX26
SG4000EX26
SGR3000GXH26
SG4000GXH26
gate turn off thyristors
500EXH21
800gxhh21
800exh21
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