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    SGR3000EX26 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    CS thyristor

    Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
    Text: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment


    OCR Scan     		SGB00GXH25 SG1500GXH25 SG3000GXH25 SGR3000EX26 SGR3000GXH26 SG800EX25* SG1400EX25" SHR400R22 SL1500GX22 SL2500JX21 CS thyristor Thyristor CS 165 SHR400 cs50n SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v PDF

    lrm200

    Abstract: SGR3000EX26 GTO 3000A 2500V LS LRM2000-A SGR3000EX GTO 100A 500V
    Text: TOSHIBA REVERSE CONDUCTING TYPE SGR3000EX26 Unit in mm PRELIMINARY í-¿3.5±02 Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 2500V Note 1. • R.M.S. On-State Current: IT (RMS) = 1400A (Tf=77°C) • R.M.S. Reverse Current: lT (RMS) = 1000A (Tf=77°C)


    OCR Scan     		SGR3000EX26 10mise lrm200 SGR3000EX26 GTO 3000A 2500V LS LRM2000-A SGR3000EX GTO 100A 500V PDF

    GTO 100A 500V

    Abstract: No abstract text available
    Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR SGR3000EX26 TnCUIDA • w w ■I I TECHNICAL DATA REVERSE CONDUCTING TYPE T E N T A T IV E D A T A SGR3000EX26 INVERTER APPLICATION U n it in mm 2-03.5 +0.2 • R ep etitive Peak Off-State Voltage : V;q r m = 2500V (Note. 1)


    OCR Scan     		SGR3000EX26 SGR3000EX26) --3000A 00A//zs --2000A, SGR3000EX26 GTO 100A 500V PDF

    SGR3000EX26

    Abstract: GTO 100A 500V
    Text: TO SH IBA GATE T U R N - O F F THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SGR3000EX26 DATA REVERSE CONDUCTING TYPE TENTATIVE DATA SGR3000EX26 Unit in mm INVERTER APPLICATION • • • • • • Repetitive Peak Off-State Voltage : V d r m = 2500V (Note. 1)


    OCR Scan     		SGR3000EX26 SGR3000EX26) --50A SGR3000EX26 GTO 100A 500V PDF

    snubber diode

    Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
    Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11


    OCR Scan     		SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G PDF

    500EXH21

    Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
    Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that


    OCR Scan     		SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX PDF

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


    OCR Scan     		SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v PDF

    gate turn off thyristors

    Abstract: 500EXH21 800gxhh21 800exh21
    Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that


    OCR Scan     		1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21 PDF