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    SG3000JX24 Search Results

    SG3000JX24 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SG3000JX24 Toshiba GATE TURN-OFF THYRISTOR Scan PDF
    SG3000JX24 Toshiba INVERTER APPLICATION Scan PDF

    SG3000JX24 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current


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    PDF SG3000JX24 SG3000JX24)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current


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    PDF SG3000JX24 SG3000JX24) 1350VI

    SG3000JX24

    Abstract: No abstract text available
    Text: SG3000JX24 TOSHIBA SG3000JX24 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION Unit in mm 0 3 .5 1 0.2 Repetitive Peak Off-State Voltage : V d RM —6000V R.M.S On-State Current : It RMS = 1200A Peak Turn-Off Current : It GQM —3000A Critical Rate of Rise of On-State Current : di / dt = 400A / jus


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    PDF SG3000JX24 3000a 00A//Â 350V/jus SG3000JX24

    50HzH

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 INVERTER APPLICATION • Repetitive Peak Off-State Voltage : V d r m ;= 6000V • R.M.S On-State C urrent • Peak Turn-Off C urrent : It (RMS)= 1200A : It GQM = 3000A


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    PDF SG3000JX24 SG3000JX24) 50HzH

    Tf76

    Abstract: t6000
    Text: SG3000JX24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000JX24 SG3000JX24 U nit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : = 6000V R.M.S On-State Current : It (RMS) = 1200A Peak Turn-Off Current : It GQM = 3000A Critical Rate of Rise of On-State Current : d i/d t= 4 0 0 A //o s


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    PDF SG3000JX24 SG3000JX24) Tf76 t6000

    snubber diode

    Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
    Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11


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    PDF SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G

    500EXH21

    Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
    Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that


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    PDF SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


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    PDF SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v

    gate turn off thyristors

    Abstract: 500EXH21 800gxhh21 800exh21
    Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that


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    PDF 1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21