SJEP120R100A
Abstract: JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories
Text: Silicon Carbide PRELIMINARY SJEP120R100A Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C
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SJEP120R100A
O-247
SJEP120R100A
JFET semisouth
SEMISOUTH
SGDR300P1
silicon carbide JFET
SGD300P1
silicon carbide j-fet
SJEP120R100
silicon carbide
SemiSouth Laboratories
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SJEP170R550
Abstract: SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP
Text: Silicon Carbide PRELIMINARY SJEP170R550 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior
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SJEP170R550
O-247
SJEP170R550
SEMISOUTH
3E05
silicon carbide JFET
JFET semisouth
silicon carbide j-fet
SJEP170
SJEP170R550 datasheet
high voltage smps
SJEP
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SJEP120R063
Abstract: SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0
Text: Silicon Carbide PRELIMINARY SJEP120R063 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior
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SJEP120R063
O-247
SJEP120R063
SEMISOUTH sjep120r063
SEMISOUTH
JFET semisouth
silicon carbide JFET
silicon carbide j-fet
silicon carbide
SJEP
SJEP120
sjep120r0
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SJEP120R100
Abstract: SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth
Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C
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SJEP120R100
O-247
SJEP120R100
SEMISOUTH
silicon carbide JFET
semisouth sjEp120R100
SGD600P1
SGDR600P1
silicon carbide
JFET semisouth
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SJDP120R085
Abstract: SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r
Text: Silicon Carbide PRELIMINARY SJDP120R085 Product Summary Normally-On Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C
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SJDP120R085
O-247
SJDP120R085
SEMISOUTH
sjdp120
SJDP
silicon carbide JFET
JFET semisouth
JFET semisouth Semisouth, SJDP120R085
silicon carbide j-fet
silicon carbide
sjdp120r
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SJEP120R100
Abstract: SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET
Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C
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SJEP120R100
O-247
SJEP120R100
SEMISOUTH
silicon carbide JFET
SJEP120
JFET semisouth
silicon carbide j-fet
SJEP
semisouth sjEp120R100
induction heating schematic
semisouth JFET
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ASJD1200R045
Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)
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ASJD1200R045
O-258
260oC
MIL-PRF-19500
MIL-STD-750
O-258
SJDP120R045
O-247
ASJD1200R045
SiC JFET
JFET semisouth
silicon carbide JFET
silicon carbide j-fet
SEMISOUTH
semisouth JFET
VGS15V
TO258
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SiC JFET
Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)
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ASJD1200R045
O-257
260oC
MIL-PRF-19500
MIL-STD-750
O-257
SJDP120R045
O-247
ASJD1200R045
SiC JFET
JFET semisouth
5A JFET
SEMISOUTH
SJDP
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JFET semisouth
Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET
Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A
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SGDR600P1
5V/-15V
SGDR600P1
SJEP120R050
SJEP120R063
SJEP120R050
JFET semisouth
SEMISOUTH
SJEP120
AN-SS1
ixdd509
SiC JFET
JFET
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Untitled
Abstract: No abstract text available
Text: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm
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30-kW
30-kW,
SJEP120R100,
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Untitled
Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 michael.frisch@vincotech.com FIRST STANDARD POWER MODULES WITH NORMALLY OFF SiC JFETs FOR HIGHPERFORMANCE SOLAR INVERTERS
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SEMISOUTH
Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)
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ASJD1200R085
O-257
260oC
MIL-PRF-19500
MIL-STD-750
O-257
SJDP120R085
O-247
ASJD1200R085
SEMISOUTH
JFET semisouth
SiC JFET
semisouth JFET
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JFET semisouth
Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1200R063
O-257
260oC
MIL-PRF-19500
MIL-STD-750
SJEP120R063
O-247
ASJE1200R063
JFET semisouth
SiC JFET
SEMISOUTH
sjep120r0
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JFET semisouth
Abstract: SEMISOUTH SiC JFET
Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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O-257
260oC
MIL-PRF-19500
MIL-STD-750
ASJE1200R100
SJEP120R100
O-247
ASJE1200R100
JFET semisouth
SEMISOUTH
SiC JFET
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SEMISOUTH
Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC
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-55oC
200oC
260oC*
MIL-PRF-19500
O-257)
O-257
SEMISOUTH
1200v 30A to247
JFETs SiC
jfets
downhole
ASJD1200R045
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Untitled
Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-147 michael.frisch@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com A COMPLETE RANGE OF POWER MODULES WITH VARIOUS SiC SWITCHES FOR HIGHPERFORMANCE, THREE-PHASE SOLAR INVERTERS
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ASJE1200R100
Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Text: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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O-258
260oC
MIL-PRF-19500
MIL-STD-750
ASJE1200R100
SJEP120R100
O-247
ASJE1200R100
O-257
SiC JFET
JFET semisouth
semisouth sjEp120R100
SEMISOUTH
SJEP120
silicon carbide JFET
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ASJE1700R550
Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
Text: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1700R550
O-258
260oC
MIL-PRF-19500
MIL-STD-750
SJEP170R550
O-247
ASJE1700R550
O-257
SiC JFET
JFET semisouth
3E05
SEMISOUTH
silicon carbide j-fet
silicon carbide JFET
SJEP170
SJEP
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ASJE1200R063
Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1200R063
O-258
260oC
MIL-PRF-19500
MIL-STD-750
SJEP120R063
O-247
ASJE1200R063
O-257
SiC JFET
JFET semisouth
SJEP120
SEMISOUTH
silicon carbide JFET
sjep120r0
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SJEP170R550
Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
Text: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1700R550
O-257
260oC
MIL-PRF-19500
MIL-STD-750
SJEP170R550
O-247
ASJE1700R550
semisouth JFET
3E05
SEMISOUTH
JFET semisouth
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SDC30S120
Abstract: SEMISOUTH SGDR2500P2 SJEC120R100 SEMISOUTH SDC30S120 APTJC120AM13VCT1AG Semisouth SJEC120R100 JFET semisouth sic jfet diode t25 4 c3
Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 mΩ max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • SiC JFETX, Normally off 8 * SJEC120R100 in parallel per switch
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APTJC120AM13VCT1AG
SJEC120R100
SDC30S120
SGDR2500P2)
APTJC120AM13VCT1AG
SEMISOUTH
SGDR2500P2
SEMISOUTH SDC30S120
Semisouth SJEC120R100
JFET semisouth
sic jfet
diode t25 4 c3
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Untitled
Abstract: No abstract text available
Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 m max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features
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APTJC120AM13VCT1AG
SJEC120R100
SDC30S120
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SJEP120R125
Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2
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Integrated cooling solutions hot up
Abstract: No abstract text available
Text: J U L Y 2 0 1 2 I S S U E N ° 6 I N D U S T R Y R E V I E W Integrated cooling solutions hot up Stacks of potential: Danfoss is using its ShowerPower cooling solution to build three dimensional power blocks which will offer especially high power density.
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RD100
Integrated cooling solutions hot up
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