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    ASJD1200R045

    Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R045 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth silicon carbide JFET silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258

    SiC JFET

    Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R045 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth 5A JFET SEMISOUTH SJDP