Untitled
Abstract: No abstract text available
Text: Æ lltron PRODUCT DEVICES.INC. 1000V, 4 .4A, 4 .0 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D ra in - S o u rc e Vo 1t . 1 D rain-G ate Voltage (RGS-1.0Mo ) (1) Gate-Source V oltage Con t inuous D rain Current Continuous (Tc = 25* C) D ra in C u rre n t P u ls e d ( 3 )
|
OCR Scan
|
PDF
|
SDF4NA100
11age
|
Untitled
Abstract: No abstract text available
Text: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER
|
OCR Scan
|
PDF
|
863-594G
63bfibD2
|
SDF6NA100
Abstract: 2A472
Text: Æwtion PRODUCT DEVICES.INC N-CHANNEL ENHANCEMENT MOS FET 1000V, 5.5A, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-Source Volt. l Drain-Gate Vo 1tage (RGS-1.0Mo ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25’C) Drain Current Pulsed(3)
|
OCR Scan
|
PDF
|
SDF6NA100
MIL-S-19500
A47-2
2A472
|
APT55M90BFN
Abstract: APT60M90BFN PD10
Text: ADVANCFD POWER TECHN^0L0^6Y 4 CIE IÂVP □ 257^ 0^ 00005*10 117 1> ADVANCED OD 4 'T -S fl-is PO W ER Tec h n o lo g y APT60M90BFN 600V 63.0A 0.090 APT55M90BFN 550V 63.0A 0.090 OS<4)* a POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFElTS
|
OCR Scan
|
PDF
|
APT60M90BFN
APT55M90BFN
00A/ps)
MIL-STD-750
PD10
|
Untitled
Abstract: No abstract text available
Text: International ggjRectifier P D - 9.1232 IRFP460LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced CjSS, Coss, CrgS Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
|
OCR Scan
|
PDF
|
IRFP460LC
61350BadHomburgTel:
5545E
GD223D1
|
J212
Abstract: No abstract text available
Text: J2 1 0 .J2 1 1 .J2 1 2 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN gfe = 7000|imho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|##= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
100pA
360mW
S-16V
Vos-15V
J212
|
PN5033
Abstract: igss B-022-05 1300n
Text: CENTRAL SEMICONDUCTOR ^~r-ay-à*r na'Ht.a a0Q037i E M C E N •^D central g m ie sn tìu e to r Corp. Csnfral sem iconductor Corp. Central Sem iconductor Cori». Central sem iconductor Corp. 145 Adams Avenue ' Hauppauge, New York 11788 DESCRIPTION The CENTRAL SEMICONDUCTOR PN5033 type is a silicon P-channel junction field effect
|
OCR Scan
|
PDF
|
a0Q037i
PN5033
150Hz
VDSs10V,
igss
B-022-05
1300n
|
Untitled
Abstract: No abstract text available
Text: PD- 9.1336A International I R Rectifier IR F R /U 0 2 4 N PRELIMINARY HEXFET Power MOSFET • • • • • • Ultra Low O n-Resistance S urface M ount IRFR024N Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully A valanche Rated
|
OCR Scan
|
PDF
|
IRFR024N)
IRFU024N)
usin233
|
Untitled
Abstract: No abstract text available
Text: i^^plltron PRODUCT D E V I C E S . I NC . 1000V, 9. 0A, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D ra in -s o u rc e V o l t . l D ra in -G a te V o lta g e (RgsM .O M o ) ( l ) G ate-Sou rce V o lta g e Con t i n uo u s D ra in C u rre n t C o n tin u o u s
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: - SOLITRON DEVICES INC 4ÖE D • flBbflbQS ÜÜD3S77 D73 ■ S O D J f o W t X i m devices inc PRODUCT 'rg'&'fi N-CHANNEL ENHANCEMENT MOS FET W a llis 1000V, 4.4A. 4.0 n ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-Source Volt. l Drain-Gate Voltage
|
OCR Scan
|
PDF
|
D3S77
300nS.
|
Untitled
Abstract: No abstract text available
Text: Æ SOLITRON DEVICES INC Æntron devices. MAE D • p ro d u c t ^ . VDSS Drain-source Volt. l Drain-Gate Voltage VDGR (Rg s -I.OM o ) (1) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25*C) IOM Drain Current Pulsed(3) PD Total Power Dissipation
|
OCR Scan
|
PDF
|
di/dt-100A/
|