Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SGD600P1 Search Results

    SGD600P1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SJEP120R100

    Abstract: SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth
    Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original
    PDF SJEP120R100 O-247 SJEP120R100 SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth