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    gm72v661641ct

    Abstract: GM72V66441CT
    Text: LG Semicon Co.,Ltd. REVISION HISTORY / Revision 1.0: July 1998 - Add PC100,7K 2-2-2 Specifications. - Update Icc Specifications. - Change Input Test Condition from 2.8/0.0V to 2.4/0.4V. - Added post SPD Information separately(7K/7J/10K) for Modules. - Add Minimum Capacitance Value for Component.


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    PDF PC100 7K/7J/10K) GM72V66841CT/CLT GM72V66841CT/CLT TTP-54D) TTP-54D gm72v661641ct GM72V66441CT

    gm72v661641ct

    Abstract: GM72V66841
    Text: LG Semicon Co.,Ltd. REVISION HISTORY / Revision 1.0: July 1998 - Add PC100,7K 2-2-2 Specifications. - Update Icc Specifications. - Change Input Test Condition from 2.8/0.0V to 2.4/0.4V. - Added post SPD Information separately(7K/7J/10K) for Modules. - Add Minimum Capacitance Value for Component.


    Original
    PDF PC100 7K/7J/10K) TheGM72V661641CT/CLTis GM72V661641CT/CLT GM72V661641CT/CLT TTP-54D) TTP-54D gm72v661641ct GM72V66841

    temperature control system using LM35

    Abstract: LM35 based fan control jerry thermostat a base LM335 THERMOSTAT SCHEMATIC lm335 Thermometer LM35 pcb circuit lm35 4-20ma lm317 LM35 application circuits with sensor LM35 driver fan speed control using lm35
    Text: l a n o i t a N s ’ r o t c u d Semicon k o o b d n a H r o s n e S e ur t a r e p m e T CONTENTS 1. Introduction to this Handbook . 1 2. Temperature Sensing Techniques.


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    PDF LM135 LM235 LM335 LM135A LM235A LM335A LM335Z LM335AZ C1995 LM335M temperature control system using LM35 LM35 based fan control jerry thermostat a base LM335 THERMOSTAT SCHEMATIC lm335 Thermometer LM35 pcb circuit lm35 4-20ma lm317 LM35 application circuits with sensor LM35 driver fan speed control using lm35

    LN3046

    Abstract: 1N3038 1N3021 zener diodes 10 watt 1N3035 1N3016 1N3017 1N3018 1N3019 1N3020
    Text: SEMICON COMPONENTS INC 2ÔE D • 0135157 GOOOfll? 7 ■ I ' H ~ ZENER DIODES 1.0 WATT POWER DISSIPATION METAL CASE (DO-13) FEATURES: n o d esc r iptio n i Semicon’s IN3016 Series is a high temperature metallurgical^ bonded device. Good for low power applications in the military and commercial industry.


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    PDF PO-13) IN3016 13S157 DO-13) 1N3025 1N3026 1N3027 1N3028 1N3029 1N3030 LN3046 1N3038 1N3021 zener diodes 10 watt 1N3035 1N3016 1N3017 1N3018 1N3019 1N3020

    1N5135

    Abstract: 1N5128 1N5126
    Text: 5 WATT ZENER GLASS CASE 1N4954,1N5968, &1N5118 SERIES G2 CASE FEATURES: • Voidless Subminiature Glass Packag . . x . , r-w- ^ . .• • Metallurgically Bonded Die© Construction DESCRIPTION Semicon’s glass zener seriesfeatures high tempera­


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    PDF 1N4954 1N5968, 1N5118 1N5135 1N5128 1N5126

    LN4149

    Abstract: 1N4009 equivalent 1N3604 cu308 1N4009 1N3600 x5200 1N4149 1N4150 1N914
    Text: a SEMICON DUC TORS INC CHE » | 613bb5D □□DDSS7 S | Silicon Switching Diodes DO-35 Package ABSOLUTE M A X IM U M R ATING S @25<>C Storage Temperature .,. Operating Temperature.


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    PDF 013bbSD 00DDSS7 DO-35 1N4148 1NS53 LN4149 1N4009 equivalent 1N3604 cu308 1N4009 1N3600 x5200 1N4149 1N4150 1N914

    diode 2U 88

    Abstract: 1N4446 150D LL4446 2u 45 diode 2U DIODE ITT G 91 35
    Text: ITT SEMICON] / INTERMETALL blE D • MbflB711 DDDBlbM 117 M I S I LL4446 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4446 •Cathode Mark - 3 .5 ± 0.1


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    PDF MbflB711 LL4446 1N4446 HbflS711 Q0031b7 diode 2U 88 1N4446 150D LL4446 2u 45 diode 2U DIODE ITT G 91 35

    1N49A

    Abstract: 1N512B 1N5120 1N5129 1N5126
    Text: 5 WATT ZENER GLASS CASE 1N4954,1N5968, &1N5118 SERIES G2 CASE FEATURES: DESCRIPTION • Voidless Subminiature Glass Package • Metallurgically Bonded Dice Construction • High Temperature Opération • Designed for High Stress Environments Semicon’s glass zener seriesfeatures high tempera­


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    PDF 1N4954 1N5968, 1N5118 Cto175 A13S1S7 1N49A 1N512B 1N5120 1N5129 1N5126

    1N659

    Abstract: No abstract text available
    Text: FAIRCHILD SEMICON DUC TOR fl4 D E | 3 4 bclti7M □□2747T 0 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 4 7 9 D« 1N659/660/661 FDLL659/660/661 FAIRCHILD A Schlum berger Company General Purpose Diodes _ T - b \ ‘ 0 ° \ PACKAGES


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    PDF 2747T 1N659/660/661 FDLL659/660/661 1N659, 1N660 1N661. 1N659

    amplifier CV 203

    Abstract: 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857
    Text: RA YTHEON/ SE MI CO NDUCT OR 75 97360 RAYTHEON» SEMICON DU CT OR hi ]>F| 75T73bD ODDSDfli 66C 05081 D T~- 3 l~ O Product Specifications Small Signal V NPN Raytheon Ultra High Frequency Oscillator and


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    PDF 75T73bD 2N917 2N918/JAN 2N2608 2N2857 Fj7S173tO O-116) 14-Lead 100BSC 548SC amplifier CV 203 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857

    NEC 14324

    Abstract: No abstract text available
    Text: SEMICON COMPONENTS INC 5ÔE D • 0135157 00007TÌ i ■ T"-// — -2.5 SUPP1 M 'E Qfil DESCRIPTION FEATURES: . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage


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    PDF 00007TÃ 12sec) 1N5662 1N5662A 1N5663 1N5663A 1N5664 1N5664A 1N5665 1N5665A NEC 14324

    itt capacitor

    Abstract: OT112 P8XC552 BST72A CROSS itt canon CB/CA P83CE598FFB 80C51 P80CE598 Clk16MHZ P80CE598FHB
    Text: NAPC/PHILIPS SEMICON» bûE D • bbS3T5H O G W i l 31 0 « S I C B Philips Preliminary specification 8-bit microcontroller with on-chip CAN CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION


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    PDF P8xCE598 itt capacitor OT112 P8XC552 BST72A CROSS itt canon CB/CA P83CE598FFB 80C51 P80CE598 Clk16MHZ P80CE598FHB

    MIL-S-19500

    Abstract: MIL-S-19500-507 1N538 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent
    Text: MILITARY DEVICES The following table lists the device types available from Semicon Components Inc. which are manufactured and tested in accordance with the requirements of MIL-S-19500 Revision "G” and the appropriate indicated detail specification. TYPE NUMBER


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    PDF MIL-S-19500 1N538 1N540 1N547 1N560 1N561 1N1124A& 1N1126AS 1N1128A& 1N3649 MIL-S-19500-507 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent

    1N2222A

    Abstract: 1N2222 1n15b 1n2268 ln2244a 1n15b1 1N223B LM3661TL-1.25 LN2222 1N15
    Text: SEMICON COMPONENTS INC PflE D 6135157 00D0533 5 STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 lQ RATING TO 16 AMPS 1rRR TYPE P BV VF V TEMP CURREKT C AMPERES TEMP TEMP AMPS NUMBER VOLTS 1N1537 1N1539 1N1540 1N1541 1N1542 50 160 200 300 400 1.5 1.5 1.5 1.5


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    PDF 13S1S7 1n1537 1n1539 1n1540 1n1541 1n1542 1n1543 1n1544 1n1551 1n1552 1N2222A 1N2222 1n15b 1n2268 ln2244a 1n15b1 1N223B LM3661TL-1.25 LN2222 1N15

    IOR 346H

    Abstract: 60T47 SE7071 IR 348H scsi manual BH s05 10-Mbytes ali 3511
    Text: @ LG Semicon. Co. LTD. GM82C700 FAST SCSI-2 HOST ADAPTER CHAPTER 1. OVERVIEW This section describes abstracted information of the GM82C700. 1.1 GENERAL DESCRIPTION The GM82C700 is a single chip SCSI host adap­ ter that is applied to peripheral devices controlled


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    PDF GM82C700 GM82C700. 80-pin 68-pin 10MBytes/sec. 000bl5? 000bl5fl IOR 346H 60T47 SE7071 IR 348H scsi manual BH s05 10-Mbytes ali 3511

    346h

    Abstract: 34DH gm82c gm82c700 i80x86 GM82 82c700
    Text: @ LG Semicon. Co. LTD. GM 82C700 FAST SCSI-2 HOST ADAPTER CHAPTER 1. OVERVIEW This section describes abstracted information of the GM82C700. 1.1 GENERAL DESCRIPTION The GM82C700 is a single chip SCSI host adap­ ter that is applied to peripheral devices controlled


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    PDF 82C700 GM82C700. GM82C700 80-pin 68-pin 402A757 346h 34DH gm82c i80x86 GM82 82c700

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    ispLSI1000

    Abstract: No abstract text available
    Text: Lattice ; Sem iconductor •Corporation ISP Programming and Boundary Scan Test In tr o d u c tio n Figure 1. ispLSI 2032V 44-Pin TQFP Pinout Diagram This document describes the details of Lattice Semicon­ ductor Corporation’s LSC ISP device architectures


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    PDF 44-Pin 1-888-ISP-PLDS ispLSI1000

    Untitled

    Abstract: No abstract text available
    Text: ZENER DIODES 1.0 WATT POWER DISSIPATION METAL CASE (DO-13)_ FEATURES: d e s c r ip t io n • Hermetically Sealed Semicon’s IN3016 Series is a high temperature metallurgically bonded device. Good for low power applications in the military and commercial industry.


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    PDF DO-13) IN3016 1N3036 1N3037 1N3038 1N3039 1N3040 1N3041 1N3042

    IDA45

    Abstract: RDRAM Clock
    Text: Direct RDRAM LG Semicon Co.,Ltd PRELIMINARY 64/72-Mbit 256Kx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


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    PDF 64/72-Mbit 256Kx16/18x16d) 64/72-Mbit 600MHz 800MHz DL0035-00 IDA45 RDRAM Clock

    GM76C256B

    Abstract: No abstract text available
    Text: LG Semicon Co.,Ltd. Description GM76C256BL/BLL 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle


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    PDF GM76C256BL/BLL GM76C256B 55/70/85ns. GM76C256BL/BLL 28-pin 600mil) 450mil)

    Untitled

    Abstract: No abstract text available
    Text: LG Semicon. Co. LTD. Description Features The GMM7408200AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408200AS/SG is optimized for


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    PDF GMM7408200AS/SG GMM7408200AS GMM7408200ASG

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICON] SECTOR 5SE D • 14302271 DDUM31b 77T « H A S HCTS273MS cSJ Radiation Hardened Octal D Fljp_Flop December 1992 Features : Pinouts • 3 Micron Radiation Hardened CMOS SOS F 4 ^ 0 1 - Il 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T20, LEAD FINISH C


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    PDF DDUM31b HCTS273MS MIL-STD-1835 CDIP2-T20, 108x106 05A/cm2 100nm 100nm

    Untitled

    Abstract: No abstract text available
    Text: GMM732101OCNS/SG-6/7/8 LG Semicon Co.,Ltd. Description The GMM7321010CNS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces o f IM x 16bit EDO DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321010CNS/SG is


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    PDF GMM7321010CNS/SG 16bit GMM7321010CNS/SG GMM732101OCNS/SG-6/7/8 GMM732101OCNS GMM7321010Caveform-7