Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates
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DIM500GCM33-TS000
DS6098-1
LN30465)
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DFM250PXM33-TS000
Abstract: No abstract text available
Text: DFM250PXM33-TS000 Fast Recovery Diode Module DS6100-1 May 2013 LN30467 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates High Current Density Enhanced DMOS
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DFM250PXM33-TS000
DS6100-1
LN30467)
DFM250PXM33-TS000
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Untitled
Abstract: No abstract text available
Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates
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DIM500GDM33-TS000
DS6097-1
LN30461)
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Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates
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DIM500GCM33-TS000
DS6098-1
LN30465)
2400ames
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Untitled
Abstract: No abstract text available
Text: DFM500NXM33-TS000 Fast Recovery Diode Module DS6099-1 May 2013 LN30466 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates High Current Density Enhanced DMOS
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DFM500NXM33-TS000
DS6099-1
LN30466)
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Untitled
Abstract: No abstract text available
Text: DFM250PXM33-TS000 Fast Recovery Diode Module DS6100-1 May 2013 LN30467 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates High Current Density Enhanced DMOS
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DFM250PXM33-TS000
DS6100-1
LN30467)
DFM250PXM33-TS000
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DFM500NXM33-TS000
Abstract: No abstract text available
Text: DFM500NXM33-TS000 Fast Recovery Diode Module DS6099-1 May 2013 LN30466 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates High Current Density Enhanced DMOS
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DFM500NXM33-TS000
DS6099-1
LN30466)
DFM500NXM33-TS000
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Untitled
Abstract: No abstract text available
Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates
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DIM500GDM33-TS000
DS6097-1
LN30461)
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PDF
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