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    Honeywell Sensing and Control SDP8407-001

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    SDP8407 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SDP8407 Honeywell Silicon Phototransistor Original PDF
    SDP8407-001 Honeywell Phototransistor Module, 100nA Dark Current, 840nm Wavelength Original PDF
    SDP8407-1 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    SDP8407 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor 600 nm

    Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
    Text: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION


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    PDF SDP8407 SEP8507 INFRA-16 SDP8407 phototransistor 600 nm simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet

    Infrared Phototransistor

    Abstract: simple phototransistor SDP8407 diode honeywell
    Text: 17 September 1997 SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor


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    PDF SEP8507 SDP8407 INFRA-18 SEP8507 Infrared Phototransistor simple phototransistor diode honeywell

    SDP8407

    Abstract: No abstract text available
    Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor INFRA-18.TIF DESCRIPTION


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    PDF SEP8507 SDP8407 INFRA-18 SEP8507

    simple phototransistor

    Abstract: phototransistor 600 nm phototransistor datasheet SDP8407
    Text: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded


    Original
    PDF SDP8407 SEP8507 INFRA-16 SDP8407 simple phototransistor phototransistor 600 nm phototransistor datasheet

    HOA1397-002

    Abstract: sensor transistor HOA1397 HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor
    Text: Datasheet - HOA1397-002 HOA1397-002 HOA Series Reflective Sensor, Transistor Output, Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● Due to regional agency approval requirements, some products may not be


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    PDF HOA1397-002 HOA1397 HOA1397-001, HOA1397-031, 20and 20Settings/rabab/Desktop/Datasheet 20HOA1397-002 HOA1397-002 sensor transistor HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor

    radiation detector

    Abstract: HOA1397 HOA1397-001 HOA1397-031 SDP8407
    Text: 17 September 1997 HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting


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    PDF HOA1397 INFRA-10 HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. radiation detector HOA1397-001 HOA1397-031 SDP8407

    HOA1397

    Abstract: HOA1397-001 HOA1397-031 HOA1397-032 SDP8407
    Text: HOA1397-032 HOA Series Reflective Sensor, Darlington Output, Plastic Package Actual product appearance may vary. Features Choice of phototransistor or photodarlington output ● Low profile for design flexibility ● Unfocused for sensing diffused surfaces


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    PDF HOA1397-032 HOA1397 HOA1397-001, HOA1397-031, SEP8507 HOA1397-001 HOA1397-031 HOA1397-032 SDP8407

    HOA0963-T51

    Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
    Text: Sensing and Control ! " = = Sept, 2002 = E-mail:jian.bo.zhou@honeywell.com www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65


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    PDF SE3450-011 SE3450-012 SE3450-013 SE3450-014 SE3455-001 SE3455-002 SE3455-003 SE3455-004 SE3470-001 SE3470-002 HOA0963-T51 HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002

    HOA1397

    Abstract: SDP8407
    Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor


    Original
    PDF HOA1397 INFRA-10 HOA1397 HOA1397- SEP8507 SDP8407. SDP8407

    SEP8507-001

    Abstract: SEP8507
    Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135“ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting


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    PDF SEP8507 SDP8407 SEP8507 SEP8507-001

    Untitled

    Abstract: No abstract text available
    Text: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package . 135° nominal acceptance angle . Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded


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    PDF SDP8407 SEP8507 SDP8407 0D2S55E

    SEP8507

    Abstract: No abstract text available
    Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135° nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting


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    PDF SEP8507 SDP8407 SEP8507

    Untitled

    Abstract: No abstract text available
    Text: SDP8407 Silicon Phototransistor DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded in an end-looking black plastic package. The chip is positioned to accept radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification.


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    PDF SDP8407 SDP8407

    SEP8507

    Abstract: No abstract text available
    Text: SDP8407 Silicon Phototransistor FEATUR ES • End-looking plastic package • 135° nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SD P8407 is an NPN silicon phototransistor molded


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    PDF SDP8407 SEP8507 P8407

    HOA1397-032

    Abstract: No abstract text available
    Text: H O A 1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffuse surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor


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    PDF HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. HOA1397-032

    Untitled

    Abstract: No abstract text available
    Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor


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    PDF HOA1397 HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. 4551A30

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


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    PDF GQ133Ã CLA60. C-101-C CLA60AA C-101-B CLA60AB C-101-A CLA65. C-102 CLA65AA TIL149 HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W

    HOA1397-002

    Abstract: pic with ir sensor A13970
    Text: HOA1397 Reflective Sensor DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1397-001, -002 or photodarlington (HOA1397-031, 032) encased side-by-side on parallel axes in a miniature black thermoplastic housing. The


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    PDF HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. HOA1397-002 pic with ir sensor A13970

    2440-002

    Abstract: No abstract text available
    Text: Selection Guide - Phototransistors Metal Package Components Package Style Part Number SD1440-001 SD 1440-002 S D 1440-003 S D 1440-004 Angular Response (Deg.) Light Current (mA) Min. Max. @H (mW/cm2) Page No. 5* 100 5* 100 20* 104 5* 108 5* 108 1 .5 " 112


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    PDF SD1440-001 1440-002L 1440-003L 1440-004L SD5443-001 SD5491-001 SD5491 SDP8407-001 SDP8436-001 SDP8436-002 2440-002

    A1397-031

    Abstract: A1397 A13970
    Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffuse surfaces DESCRIPTIO N The HOA1397 series consists of an Infrared emitting diode and an N PN silicon phototranslstor


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    PDF HOA1397 HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. A1397-031 A1397 A13970

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B

    A1397-001

    Abstract: No abstract text available
    Text: HOA1397 Reflective Sensor FE A TU R ES • C hoice of phototransistor or photodarlington output • Low p rofile fo r design fle xibility • U nfocused fo r sensing diffused surfaces D ESC R IP TIO N The H O A 1397 series consists of an infrared em itting


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    PDF HOA1397 A1397 SDP8407. A1397-001

    H0A1887

    Abstract: H0A2762 H0A0825 H0A1884 H0A1881 HLC2701 SE34705470 HOA1404 H0A69
    Text: Alphabetical Product Index R eference Page R eference Page R eference HLC1395 240 H0A2762 342 SE3455/5455 28 HLC2701 208 HOA2862 346 SE3470/5470 32 HLC2705 212 H0A696X/697X 376 SEP8505 36 HOA0149 228 H0A698X/699X 382 SEP8506 40 HOA0708/0709 232 H0A7720/7730


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    PDF HLC1395 HLC2701 HLC2705 HOA0149 HOA0708/0709 H0A0825 HOA086X/087X HOA088X/089X HOA0901 H0A09 H0A1887 H0A2762 H0A1884 H0A1881 SE34705470 HOA1404 H0A69