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    SE1450

    Abstract: SE1470 SEP8505 SEP8506 SEP8705 SEP8706 SE3453
    Text: Reliability IRED Power Dissipation Consideration IRED power output Po increases with forward current (lF). Increasing the forward current also increases power dissipation (Pd) and chip junction temperature (Tj), resulting in decreased optical power output and device


    Original     		PDF SE1450 SE1470 SE3453/5453 SE3455/5455 SE34705470 SEP8505 SEP8705 SEP8506 SEP8706 SE1450 SE1470 SEP8505 SEP8506 SEP8705 SEP8706 SE3453

    Untitled

    Abstract: No abstract text available
    Text: Reliability IRED Power Dissipation Consideration IRED power output P0 increases with forward current (If). Increasing the forward current also increases power dissipation (P a) and chip junction temperature (T j), resulting in decreased optical power output and device


    OCR Scan     		PDF 37CTC/W 750-C/W SE1450 SE1470 SE3453/5453 SE3455/5455 SE34705470 SEP8505 SEP8705 SEP8506

    teradyne A360

    Abstract: No abstract text available
    Text: Reliability Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged In an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium


    OCR Scan     		PDF SEC450 SE1450 SE1470 SE3453/5453 SE3455/5455 SE34705470 SEP8505 SEP8705 SEP8506 teradyne A360