Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEP8507 Search Results

    SF Impression Pixel

    SEP8507 Price and Stock

    Honeywell Sensing and Control SEP8507-001

    EMITTER IR 935NM 60MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SEP8507-001 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Verical SEP8507-001 90 20
    • 1 -
    • 10 -
    • 100 $3.289
    • 1000 $2.704
    • 10000 $2.704
    		Buy Now
    Onlinecomponents.com SEP8507-001 95
    • 1 -
    • 10 $3.12
    • 100 $2.53
    • 1000 $2.08
    • 10000 $1.88
    		Buy Now
    Master Electronics SEP8507-001 95
    • 1 -
    • 10 $3.12
    • 100 $2.53
    • 1000 $2.08
    • 10000 $1.88
    		Buy Now

    SEP8507 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SEP8507-001 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTNG GAAS ENDLOKING Original PDF

    SEP8507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor 600 nm

    Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
    Text: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION


    Original     		PDF SDP8407 SEP8507 INFRA-16 SDP8407 phototransistor 600 nm simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet

    Infrared Phototransistor

    Abstract: simple phototransistor SDP8407 diode honeywell
    Text: 17 September 1997 SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor


    Original     		PDF SEP8507 SDP8407 INFRA-18 SEP8507 Infrared Phototransistor simple phototransistor diode honeywell

    SDP8407

    Abstract: No abstract text available
    Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor INFRA-18.TIF DESCRIPTION


    Original     		PDF SEP8507 SDP8407 INFRA-18 SEP8507

    simple phototransistor

    Abstract: phototransistor 600 nm phototransistor datasheet SDP8407
    Text: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded


    Original     		PDF SDP8407 SEP8507 INFRA-16 SDP8407 simple phototransistor phototransistor 600 nm phototransistor datasheet

    HOA1397-002

    Abstract: sensor transistor HOA1397 HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor
    Text: Datasheet - HOA1397-002 HOA1397-002 HOA Series Reflective Sensor, Transistor Output, Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF HOA1397-002 HOA1397 HOA1397-001, HOA1397-031, 20and 20Settings/rabab/Desktop/Datasheet 20HOA1397-002 HOA1397-002 sensor transistor HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor

    radiation detector

    Abstract: HOA1397 HOA1397-001 HOA1397-031 SDP8407
    Text: 17 September 1997 HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting


    Original     		PDF HOA1397 INFRA-10 HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. radiation detector HOA1397-001 HOA1397-031 SDP8407

    HOA1397

    Abstract: HOA1397-001 HOA1397-031 HOA1397-032 SDP8407
    Text: HOA1397-032 HOA Series Reflective Sensor, Darlington Output, Plastic Package Actual product appearance may vary. Features Choice of phototransistor or photodarlington output ● Low profile for design flexibility ● Unfocused for sensing diffused surfaces


    Original     		PDF HOA1397-032 HOA1397 HOA1397-001, HOA1397-031, SEP8507 HOA1397-001 HOA1397-031 HOA1397-032 SDP8407

    HOA0963-T51

    Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
    Text: Sensing and Control ! " = = Sept, 2002 = E-mail:jian.bo.zhou@honeywell.com www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65


    Original     		PDF SE3450-011 SE3450-012 SE3450-013 SE3450-014 SE3455-001 SE3455-002 SE3455-003 SE3455-004 SE3470-001 SE3470-002 HOA0963-T51 HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002

    teradyne A360

    Abstract: IRED A360 SE1450 SE2460 SE3450 SE5450 SEP8505 SEP8506 SE1455
    Text: Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study INTRODUCTION Honeywell is committed to the manufacture of reliable, high quality optoelectronic products. An ISO 9001 quality system is maintained, providing the necessary controls to assure that all product meets or exceeds the


    Original     		PDF SEC450 SE1450/1455 SE3450/5450 SEP8505 SEP8506 SEP8507 teradyne A360 IRED A360 SE1450 SE2460 SE3450 SE5450 SE1455

    HOA1397

    Abstract: SDP8407
    Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor


    Original     		PDF HOA1397 INFRA-10 HOA1397 HOA1397- SEP8507 SDP8407. SDP8407

    SEP8507-001

    Abstract: SEP8507
    Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135“ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting


    OCR Scan     		PDF SEP8507 SDP8407 SEP8507 SEP8507-001

    Untitled

    Abstract: No abstract text available
    Text: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package . 135° nominal acceptance angle . Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded


    OCR Scan     		PDF SDP8407 SEP8507 SDP8407 0D2S55E

    SEP8507

    Abstract: No abstract text available
    Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135° nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting


    OCR Scan     		PDF SEP8507 SDP8407 SEP8507

    SEP8507

    Abstract: No abstract text available
    Text: SDP8407 Silicon Phototransistor FEATUR ES • End-looking plastic package • 135° nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SD P8407 is an NPN silicon phototransistor molded


    OCR Scan     		PDF SDP8407 SEP8507 P8407

    HOA149-1

    Abstract: HOA708-1 HOA709-1 HOA708 HOA1405-1 HOA1405-2 HOA708-11 HOA709-11 HOA149 BUT 11 Transistor
    Text: HONEYWELL INC/ MICRO Assemblies 11E D m 4SS1S3D 0013884 B • HON1 7 ^ > - d / Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,


    OCR Scan     		PDF QD13flfll4 HLC1395 HOA149, HOA708, HOA709, HOA1405 SEP8505IRED, SDP8405 SDP8105 HOA1397 HOA149-1 HOA708-1 HOA709-1 HOA708 HOA1405-1 HOA1405-2 HOA708-11 HOA709-11 HOA149 BUT 11 Transistor

    HOA1397-032

    Abstract: No abstract text available
    Text: H O A 1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffuse surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor


    OCR Scan     		PDF HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. HOA1397-032

    HOA1405-1

    Abstract: HOA149-1 HOA1405-2 HOA708 HOA709-1 HOA708-1 HOA709-11 HOA708-11 HOA709 HOA149
    Text: HO NE YWELL INC/ MICRO Assemblies 41E D • 4SS1A3D 0D13fifl4 2 ■ H O N L Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,


    OCR Scan     		PDF HLC1395 HOA149, HOA708, HOA709, HOA1405 SEP8505IRED, SDP8405 SDP8105 HOA1397 SEP8507 HOA1405-1 HOA149-1 HOA1405-2 HOA708 HOA709-1 HOA708-1 HOA709-11 HOA708-11 HOA709 HOA149

    Untitled

    Abstract: No abstract text available
    Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor


    OCR Scan     		PDF HOA1397 HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. 4551A30

    E5450

    Abstract: E1470 1450001 345-500 SE5470 E1450 u 880 e
    Text: Selection Guide - Infrared Emitting Diodes Metal Package Components P ackage Part X Beam Style Num ber (nm ) Angle Total Pow er O utput Min. M ax @ l„ P age No. Units (m A) mw 50 8 m W /cm 2 20 12 mW 50 8 m W /cm ' 20 12 mW 50 16 (Deg.) S E 1450-001 S E1450-002


    OCR Scan     		PDF E1450-002 SE1450-003 SE1450-004 SE1470-001 E1450-002L SE1450-003L SE1450-004L SE1470-002L E1470-003L E1470-004L E5450 E1470 1450001 345-500 SE5470 E1450 u 880 e

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


    OCR Scan     		PDF GQ133Ã CLA60. C-101-C CLA60AA C-101-B CLA60AB C-101-A CLA65. C-102 CLA65AA TIL149 HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W

    teradyne A360

    Abstract: No abstract text available
    Text: Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged in an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium


    OCR Scan     		PDF SEC450 SEP8505 SEP8506 SEP8507 teradyne A360

    HOA1397-002

    Abstract: pic with ir sensor A13970
    Text: HOA1397 Reflective Sensor DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1397-001, -002 or photodarlington (HOA1397-031, 032) encased side-by-side on parallel axes in a miniature black thermoplastic housing. The


    OCR Scan     		PDF HOA1397 HOA1397-001, HOA1397-031, SEP8507 SDP8407. HOA1397-002 pic with ir sensor A13970

    teradyne A360

    Abstract: No abstract text available
    Text: Reliability Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged In an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium


    OCR Scan     		PDF SEC450 SE1450 SE1470 SE3453/5453 SE3455/5455 SE34705470 SEP8505 SEP8705 SEP8506 teradyne A360