2n06l35
Abstract: transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a
Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD26N06S2L-35
PG-TO252-3-11
2N06L35
2n06l35
transistor 2N06L35
IPD26N06S2L-35
PG-TO252-3-11
10026a
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2N06L35
Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD26N06S2L-35
PG-TO252-3-11
2N06L35
726-IPD26N06S2L-35
2N06L35
2N06L
v5856
GS6010
PCB REV 3.5
IPD26N06S2L-35
2N06L3
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AO4619
Abstract: IF6 MOSFET
Text: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard
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AO4619
AO4619
IF6 MOSFET
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AO4619
Abstract: No abstract text available
Text: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. AO4619
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AO4619
AO4619/L
AO4619L
-AO4619L
AO4619
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74a diode
Abstract: AO4604A
Text: AO4604A Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard
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AO4604A
74a diode
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IRFP 620
Abstract: SD 621 transistor IRFP 306 transistor irf620 transistor irf b 620 irf 620
Text: r Z 7 SGS-THOMSON ^7# HDlgœitLlKêTOiDÊi IRF 620/FI-621/FI IRF 622/FI-623/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI VDSS 200 V 200 V IRF621 IRF621FI 150 V 150 V IRF622 IRF622FI 200 V 200 V IRF623 IRF623FI 150 V 150 V RdS oii
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620/FI-621/FI
622/FI-623/FI
IRF620
IRF620FI
IRF621
IRF621FI
IRF622
IRF622FI
IRF623
IRF623FI
IRFP 620
SD 621 transistor
IRFP 306
transistor irf620
transistor irf b 620
irf 620
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2SD860
Abstract: 2SD860A TS18
Text: Power Transistors 2SD860, 2SD860A 2SD860, 2SD860A Silicon NPN Triple-Diffused Planar Type Package D im ensions Power A m plifier • Feature • High c o lle c to r-b a s e v o lta g e Vcuo ■ A bsolute M axim um R atings (T c= 25 °C ) Item V a lu e Sym bol
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2SD860,
2SD860A
2SD860
2SD812/A)
2SD860A
TS18
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b
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O-220
C67078-S1321-A2
023SbD5
OOA4471
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 334 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vos Id ^ D S on Package 1) Ordering Code BUZ 334 600 V 12 A 0.5 Q TO -218 AA C67078-S3130-A2 M axim um Ratings Param eter Continuous drain current, Tc = 26 ”C
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C67078-S3130-A2
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diode sy 710
Abstract: sy 710 diode transistor buz 90 transistor buz 350 buz90
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vbs 600 V b 4.5 A ^DS on Package Ordering Code 1 .6 « TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S1321-A2
D5155
diode sy 710
sy 710 diode
transistor buz 90
transistor buz 350
buz90
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VPT05155
Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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VPT05155
O-220
C67078-S1321-A2
VPT05155
buz90
SiEMENS PM 350 98
C67078-S1321-A2
s34 diode
transistor buz 90
GP-051
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STVHD90
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON STVHD90 7 Æ „ HO g (S [iL[i(g¥®(ô)iQ(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA • • • • • • TYPE Voss R DS(on) STVHD90 50 V 0.023 fi •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT
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STVHD90
STVHD90
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4
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Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
A235b05
E35b05
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON STLT30 STLT30FI ¡[iJOT iD gi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STLT30 STLT30FI . . . . . . V dss R D S (o n 60 V 60 V 0 .0 8 n 0 .0 8 n Id 25 15 A A LOW GATE CHARGE HIGH CUR RENT CAPABILITY LOGIC LEVEL COMPATIBLE INPUT
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STLT30
STLT30FI
O-220
ISOWATT220
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DIODE CQ 618
Abstract: D3055 U3055L
Text: PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 3 . 7 A , R ds on =80 itiQ @ V g s =1 0V . Rds(on)=1 10m £1 @ V gs =4.5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handing capability.
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80itiQ
110mC2
O-251
O-252
to-252aa
to-251
CED3055L3/CEU3055L3
DIODE CQ 618
D3055
U3055L
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WT250-S162
Abstract: 2SD150 WT250-N142 WT250-S142 T-25-0 250-N440 WT-250 WT-150
Text: W T ISO Type 1,S D 100 .3 0 0 m m :W T 2 5 0 -S /P /N 142 Type 2, SD 150. 500 m m :W T 2 5 0 -S /P /N 162 i— 19,2- Adjustable Scanning Distance Type 1 . 100 to 300 mm 1 ^ 150 to 500 mm 1 ^ -i1 25,: r h Characteristics: • Background suppression BGS
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WT250
WT250-P142
250-P
WT250-N
250-N
M12-4-pin
WT250-S162
2SD150
WT250-N142
WT250-S142
T-25-0
250-N440
WT-250
WT-150
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T160R
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
SQT404
T160R
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O2SC
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
SQT404
O2SC
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STVHD90
Abstract: ultra low igss pA QG3010
Text: 3ÜE D • 7 ^5^ 537 0 0 3 0 1 0 0 7 ■ r T '* 3 f >H 3 S G S-THOMSON w # S C S -T H O M S O N k 7 # [j^ D ^ © [i[L [i g T r ^ © 1 0 © S _ STVHD90 N T YPE V qss ^D S(on STVHD 90 50 V 0.023 Q CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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7qgq537
STVHD90
STVHD90
O-220
7c15ci237
s-6059
T-39-13
ultra low igss pA
QG3010
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ld33a
Abstract: c3320 D33A STH33N20 STH33N20FI LD33 RC50 STW33N20 D-33A 7W237
Text: 7 T S T E 3 7 DO HSTHS 3G 3 « S Ü T H STH33N20/FI STW33N20 SGS-THOMSON ¡[iJ § «S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 33N20 S TH 33N20FI STW 33N20 • . . . . V d ss Ros(on Id 200 V 200 V 200 V < 0.085 Q < 0.085 £i < 0.085 n
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7TSTE37
STH33N20/FI
STW33N20
STH33N20
STH33N20FI
STW33N20
STH/STW33N20
7TST237
STH33N20/FI-STW33N20
ld33a
c3320
D33A
LD33
RC50
D-33A
7W237
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information applikation
Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Text: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK
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Untitled
Abstract: No abstract text available
Text: _ • 7^237 rr7 Ä 7# ÜOMbOfiT DT3 ■ S G T H _ _ SCS-THOMSON S T K 14N 10 RÆD g^mi(gïï^ iD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK14N 10 V d ss RDS(on Id 100 V < 0 .1 4 n 14 A ■ T Y P IC A L FtDS(on) = 0 .0 9 5 £2
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STK14N
OT-82
OT-194
STK14N10
DD4bD14
004b015
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TM 1621 lcd
Abstract: TRANSISTOR SUBSTITUTION "TRANSISTOR SUBSTITUTION" AX1621 S05402 TPF0410 diode s0540 T 1621 MH
Text: 19-1214; Rev 0; 7/97 D igitally Adjustable LCD Bias Supplies Output voltage can be set to a desired positive or nega tive voltage range with external resistors, and adjusted over that range with the on-board digital-to-analog con verter 0 A C or with a potentiometer. The MAX1620/
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MAX1620/MAX
MAX1620/
MAX1621
X1620/MAXI
CT10NS
MAX162Û
MAX1S21
MAX1621
TM 1621 lcd
TRANSISTOR SUBSTITUTION
"TRANSISTOR SUBSTITUTION"
AX1621
S05402
TPF0410
diode s0540
T 1621 MH
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Untitled
Abstract: No abstract text available
Text: 19-1214; Rev 1; 1/98 jy\JY X A JV \ Digitally Adjustable LCD Bias Supplies The MAX1620/MAX1621 convert a 1.8V to 20V battery voltage to a positive or negative LCD backplane bias voltage. Backplane bias voltage can be automatically disabled when the d isp lay logic voltage is rem oved,
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MAX1620/MAX1621
MAX1620/
MAX1621
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