TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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Untitled
Abstract: No abstract text available
Text: / S 7 S GS-THOM SON ^7 # » M g(M [I[L[I(g¥[M)Rl(gS STVHD90 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS STVHD90 50 V • • • • • • ^DS(on) fi 0.023 •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT
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STVHD90
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STVHD90
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON STVHD90 7 Æ „ HO g (S [iL[i(g¥®(ô)iQ(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA • • • • • • TYPE Voss R DS(on) STVHD90 50 V 0.023 fi •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT
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STVHD90
STVHD90
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STVHD90
Abstract: ultra low igss pA QG3010
Text: 3ÜE D • 7 ^5^ 537 0 0 3 0 1 0 0 7 ■ r T '* 3 f >H 3 S G S-THOMSON w # S C S -T H O M S O N k 7 # [j^ D ^ © [i[L [i g T r ^ © 1 0 © S _ STVHD90 N T YPE V qss ^D S(on STVHD 90 50 V 0.023 Q CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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7qgq537
STVHD90
STVHD90
O-220
7c15ci237
s-6059
T-39-13
ultra low igss pA
QG3010
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Untitled
Abstract: No abstract text available
Text: 3ÜE D • 0030100 7 ■ SCS-THOMSON s 6 S' TH0Í,S0N IIL ir a M lO ! S T V H D 90 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR P R E LIM IN A R Y DATA TYPE STVHD90 • • • • • • V qss 50 V ^DS on 0.023 ß Id 52 A VERY HIGH DENSITY VERY LOW RDS(on)
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STVHD90
00301QM
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n52a
Abstract: STVHD90FI STVHD90
Text: SGSTHOMSON STVHD90 STVHD90FI IL D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STVHD90 STVHD90FI 50 V 50 V R d S ofi 0.023 U 0.023 n Id 52 A 29 A . . . . . . AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STVHD90
STVHD90FI
STVHD90/FI
n52a
STVHD90FI
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ISOWATT220
Abstract: No abstract text available
Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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O-220
ISOWATT220
ISOWATT22Q
STH107N50
STH10N50
STHI10N50
STHI10N50FI
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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P-220
ISOWATT220
O-220
O-220
STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
sgs*P381
ISOWATT218 IGBT
STLT20
MTP3055AFI
SGSP381
IRFP453FI
SGSP579
SGSP591
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L5832
Abstract: buz11 application note buz11 r5 24V, 1W Zener Diode STVHD90
Text: / = 7 SGS-THOMSON APPLICATION NOTE DRIVE CIRCUIT FOR AN ELECTRIC FUEL CUT-OFF VALVE INTRODUCTION CIRCUIT DESCRIPTION The circuit described in this application note has been designed to drive the solenoid of an electric valve. The solenoid has the following characte
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L5832
L5832.
100msec
100msec.
buz11 application note
buz11 r5
24V, 1W Zener Diode
STVHD90
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L5832
Abstract: buz11 application note buz11 r5 STVHD90
Text: r Z J S G S -T H O M ^ 7 # » S O N APPLICATION NOTE R B O M iillC T M lö E i DRIVE CIRCUIT FOR AN ELECTRIC FUEL CUT-OFF VALVE INTRODUCTION CIRCUIT DESCRIPTION The circuit described in this application note has been designed to drive the solenoid of an electric
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L5832
L5832.
GU-1262
GU-1263
buz11 application note
buz11 r5
STVHD90
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TSD45N50V
Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00
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O-220
TSD45N50V
TSD200N05V
TSD40N55V
TSD180N10V
IRF540
TSD135N10V
TSD150N10V
TSD4M450V
TSD17N100
TSD160N05V
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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MOSFET Termination Structure
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands
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STVHD90.
STVHD90
MOSFET Termination Structure
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
O-220
ISOWATT22Û
ISOWATT22Q
ISOWATT220
MTP3055AFI
IRF722FI
IRFP453FI
SGSP579
SGSP591
SGS35MA050D1
SGSP382
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sgs*P381
Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
ISS 355
IRFp150 To3 package
IRFP350FI
MTP3055AFI
SGSP591
SGSP239
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Bow94c
Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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IRFZ20FI
BUZ10
STLT29*
BUZ11A
SGSP382
SGSP482
BUZ11
BUZ11FI
IRFZ42
SGSP492
Bow94c
MTP3055A
IRFZ22 mosfet
b0334
SGSP222
STVHD90
SGS137
SGSD93G
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ISOWATT-220
Abstract: mtp15n05 BU210A ISOWATT220
Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00
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O-220
ISOWATT220
ISOWATT220
STH107N50
STH10N50
STHI10N50
STHI10N50FI
ISOWATT-220
mtp15n05
BU210A
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SGS M114S
Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.
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sgs mosfet
Abstract: buz11 application note FZJ 101
Text: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands
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STVHD90.
STVHD90
sgs mosfet
buz11 application note
FZJ 101
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
IRFp150 To3 package
bu245a
BR 1300
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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TSD45N50V
Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000
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STP30N05
BUZ11A
STP25N05
BUZ10
STLT29
BUZ71
IRFZ20
BUZ71A
STP17N
STLT19
TSD45N50V
TSD40N55V
TSD33N50V
TSD23N50V
TSD30N60V
TSD180N10V
TSD160N05V
TSD14N100V
TSD4M450V
TSD22N80V
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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