D3055
Abstract: D3055L
Text: S DU/D3055L2 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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DU/D3055L2
O-252
O-251
O-252AA
300ms
Tube/TO-252
D3055
D3055L
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Untitled
Abstract: No abstract text available
Text: S T U/D3055L S amHop Microelectronics C orp. Arp,20 2005 ver1.2 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.
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U/D3055L
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Untitled
Abstract: No abstract text available
Text: S DU/D3055L2 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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DU/D3055L2
O-252
O-251
O-252AA
300ms
O-252
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D3055L
Abstract: D3055
Text: S T U/D3055L S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max R ugged and reliable.
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U/D3055L
O-252
O-251
O-252AA
Tube/TO-252
O-252
D3055L
D3055
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D3055
Abstract: No abstract text available
Text: S DU/D3055L2 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable. 34 @ V G S = 4.5V
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DU/D3055L2
O-252
O-251
O-252AA
300ms
D3055
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D3055
Abstract: 1S10M
Text: S T U/D3055NL S amHop Microelectronics C orp. P reliminary May.28,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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U/D3055NL
O-252
O-251
O-252AA
300ms
Tube/TO-252
D3055
1S10M
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D3055L
Abstract: D3055
Text: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).
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U/D3055L
O-252
O-251
O-252AA
Tube/TO-252
O-252
D3055L
D3055
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V
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STU/D3055L2
O-252
O-251
O-252AA
U/D3055L2
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D3055L2 S amHop Microelectronics C orp. Nov,26 2004 ver1.2 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.
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U/D3055L2
O-252
O-251
O-252AA
O-252
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
Tube/TO-252
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Untitled
Abstract: No abstract text available
Text: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).
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U/D3055L
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V
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STU/D3055L2
O-252
O-251
O-252AA
U/D3055L2
Tube/TO-252
O-252
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d3055
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
Tube/TO-252
d3055
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V
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STU/D3055L2
O-252
O-251
O-252AA
U/D3055L2
O-252
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
O-252
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C5239
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Co rp. Mar.06, 2007 ver1.4 N-Channel Logic Level Enhancement Mode F ield Effect Transistor PRODUCT V DSS FEA TURES SUMMARY ID R DS ON (mW ) Super high dense cell desig n for low R DS(ON). Max Rugged and reliable. 45 @ VGS = 10V
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STU/D3055L2
O-252
O-251
O-252AA
urrent-C85
U/D3055L2
Tube/TO-252
C5239
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D3055
Abstract: No abstract text available
Text: S T U/D3055L S amHop Microelectronics C orp. MAR ,09 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.
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U/D3055L
O-252
O-251
O-252AA
Tube/TO-252
O-252
D3055
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16644 384-OUTPUT TFT-LCD SOURCE DRIVER 64 GRAY SCALE DESCRIPTION The µPD16644 is a source driver for TFT-LCD 64 gray scale displays. Its logic circuit operates at 3.3 V and the driver circuit operates at 3.3 or 5.0 V (selectable). The input data is digital data at 6 bits x 6 dots, and 260,000 colors can
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PD16644
384-OUTPUT
PD16644
64-value
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16644 384-OUTPUT TFT-LCD SOURCE DRIVER 64 GRAY SCALE DESCRIPTION The µPD16644 is a source driver for TFT-LCD 64 gray scale displays. Its logic circuit operates at 3.3 V and the driver circuit operates at 3.3 or 5.0 V (selectable). The input data is digital data at 6 bits x 3 dots, and 260,000 colors
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PD16644
384-OUTPUT
PD16644
64-value
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D3055
Abstract: v8189 350 466 DX2 computer S114 S380 PLH31 S383
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16644 384-OUTPUT TFT-LCD SOURCE DRIVER 64 GRAY SCALE DESCRIPTION The µPD16644 is a source driver for TFT-LCD 64 gray scale displays. Its logic circuit operates at 3.3 V and the driver circuit operates at 3.3 or 5.0 V (selectable). The input data is digital data at 6 bits x 6 dots, and 260,000 colors can
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PD16644
384-OUTPUT
PD16644
64-value
D3055
v8189
350 466 DX2 computer
S114
S380
PLH31
S383
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Untitled
Abstract: No abstract text available
Text: Evaluation board available. NX2601 DUAL SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER & 5V BIAS REGULATOR PRELIMINARY DATA SHEET Pb Free Product DESCRIPTION The NX2601 controller IC is a triple controller with a dual channel synchronous Buck controller IC and an LDO controller designed for multiple converters such as PCIe
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NX2601
NX2601
200kHz
20REF
00BSC
50BSC
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D55-R
Abstract: 350 466 DX2 computer S380 S1142 d3055
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d3055
Abstract: EK7402 EK7402A EK7402B D-393
Text: ֮ٙټጠ DOC Title Κ ֮ٙᒳᇆ DOC NO ΚTDS7402-0˄ EK7402 Data Sheet REV Κ˄.˄ ठ ء ڻPage Κ ˄/˄ ֮ٙࠫ/ଥૡԫᥦ। Revision History ठء REV. ଥૡֲཚ REV Date سயֲཚ Eff. Date ˄.0 200˄/˄2/˄4 200˄/˄2/25
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EK7402
TDS7402-0
EK7402
384-Channel
EK7402A,
EK7402B
d3055
EK7402A
D-393
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D3055
Abstract: CJD3055 cev code CJD2955
Text: Central CJD2955 PNP D3055 NPN Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CJD2955, CJ D3055types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a
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CJD2955
CJD3055
CJD2955,
D3055types
400mA
500mA,
0gg17m7
0DD174Ã
D3055
cev code
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