AO5800E
Abstract: Qg (nC) 70°C SC-89-6 SC89-6L alpha omega
Text: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
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Original
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PDF
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AO5800E
AO5800E
SC89-6L
AO5800EL
-AO5800EL
SC-89-6
Param0001
Qg (nC)
70°C
SC-89-6
alpha omega
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Untitled
Abstract: No abstract text available
Text: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
|
Original
|
PDF
|
AO5800E
AO5800E
SC89-6L
AO5800EL
-AO5800EL
SC-89-6
|