Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SC70-5 MARKING G2 Search Results

    SC70-5 MARKING G2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    SC70-5 MARKING G2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 15hay 11-Mar-11

    S101-05

    Abstract: AN816 SI1912EDH-T1
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC S101-05 AN816 SI1912EDH-T1

    Untitled

    Abstract: No abstract text available
    Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1913EDH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1917EDH SC-70 2002/95/EC OT-363 SC-70 Si1917EDH-T1-E3 Si1917EDH-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 11-Mar-11

    marking 6pin

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 11-Mar-11 marking 6pin

    MARKING 518c

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. MARKING 518c

    Untitled

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    AN814

    Abstract: No abstract text available
    Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 15trademarks 2011/65/EU 2002/95/EC. 2002/95/EC AN814

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1900DL 2002/95/EC OT-363 SC-70 Si1900DL-T1-E3 Si1900DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1900DL 2002/95/EC OT-363 SC-70 Si1900DL-T1-E3 Si1900DL-T1-GE3 11-Mar-11

    SI1926DL-T1-E3

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GEemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a


    Original     		PDF Si1867DL 2002/95/EC SC70-6 11-Mar-11

    marking WE SC70-6

    Abstract: No abstract text available
    Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 Si1913DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking WE SC70-6

    Untitled

    Abstract: No abstract text available
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    marking 6pin

    Abstract: No abstract text available
    Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 11-Mar-11 marking 6pin

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN816

    Abstract: No abstract text available
    Text: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1913EDH SC-70 2002/95/EC OT-363 SC-70 Si1913EDH-T1-E3 Si1913EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC AN816

    SQ1902EL

    Abstract: No abstract text available
    Text: SQ1902EL Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 20 RDS(on) () at VGS = 4.5 V


    Original     		PDF SQ1902EL 2002/95/EC OT-363 SC-70 SQ1902EL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A SQ1902EL

    Untitled

    Abstract: No abstract text available
    Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1913EDH SC-70 2002/95/EC OT-363 SC-70 Si1913EDH-T1-E3 Si1913EDH-T1-GE3 11-Mar-11