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    SI1900DL Price and Stock

    Vishay Siliconix SI1900DL-T1-E3

    MOSFET 2N-CH 30V 0.59A SC70-6
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    DigiKey SI1900DL-T1-E3 Reel 27,000 3,000
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    SI1900DL-T1-E3 Cut Tape 1,440 1
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    • 10 $0.491
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    • 1000 $0.21664
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    SI1900DL-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI1900DL-T1-GE3

    MOSFET 2N-CH 30V 0.63A SC70-6
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    DigiKey SI1900DL-T1-GE3 Reel 3,000 3,000
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    SI1900DL-T1-GE3 Digi-Reel 1
    • 1 $0.59
    • 10 $0.502
    • 100 $0.3493
    • 1000 $0.22164
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    SI1900DL-T1-GE3 Cut Tape 1
    • 1 $0.59
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    Vishay Intertechnologies SI1900DL-T1-GE3

    Trans MOSFET Array Dual N-CH 30V 0.59A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1900DL-T1-GE3)
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    Avnet Americas SI1900DL-T1-GE3 Reel 6 Weeks 3,000
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    Mouser Electronics SI1900DL-T1-GE3 8,670
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    TTI SI1900DL-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI1900DL-T1-E3

    Transistor MOSFET Array Dual N-CH 30V 0.59A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1900DL-T1-E3)
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    Avnet Americas SI1900DL-T1-E3 Reel 3,000
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    SI1900DL-T1-E3 Reel 9 Weeks 3,000
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    Mouser Electronics SI1900DL-T1-E3 40,822
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    • 1000 $0.203
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    Verical SI1900DL-T1-E3 3,000 3,000
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    SI1900DL-T1-E3 2,625 36
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    Arrow Electronics SI1900DL-T1-E3 3,000 9 Weeks 3,000
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    SI1900DL-T1-E3 Cut Strips 2,625 9 Weeks 1
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    • 100 $0.2508
    • 1000 $0.1667
    • 10000 $0.1667
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    TTI SI1900DL-T1-E3 Reel 33,000 3,000
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    Avnet Asia SI1900DL-T1-E3 32 Weeks 3,000
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    SILI SI1900DL-T1-E3

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    Bristol Electronics SI1900DL-T1-E3 2,503
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    Quest Components SI1900DL-T1-E3 2,002
    • 1 $0.6115
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    • 1000 $0.2446
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    SI1900DL Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si1900DL Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI1900DL-DS Vishay Telefunken DS-Spice Model for Si1900DL Original PDF
    Si1900DL SPICE Device Model Vishay Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI1900DL-T1 Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI1900DL-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 590MA SC70-6 Original PDF
    SI1900DL-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 30V SC70-6 Original PDF

    SI1900DL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code PB

    Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51614--Rev. 05-Sep-05 marking code PB SI1900DL-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original     		PDF Si1900DL OT-363 SC-70 S-01458--Rev. 10-Jul-00

    Si1900DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1900DL 25-Apr-04

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code


    Original     		PDF Si1900DL OT-363 SC-70 S-21374--Rev. 12-Aug-02

    Si1900DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1900DL Dual N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si1900DL

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1900DL 2002/95/EC OT-363 SC-70 Si1900DL-T1-E3 Si1900DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1900DL 2002/95/EC OT-363 SC-70 Si1900DL-T1-E3 Si1900DL-T1-GE3 11-Mar-11

    Si1900DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1900DL 18-Jul-08

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 18-Jul-08

    Si1900DL

    Abstract: Si1900DL-T1-E3
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1900DL 2002/95/EC OT-363 SC-70 Si1900DL-T1-E3 Si1900DL-T1-GE3 18-Jul-08

    Si1900DL

    Abstract: Si1900DL-T1
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 08-Apr-05

    Si1900DL

    Abstract: Si1900DL-T1-E3
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1900DL 2002/95/EC OT-363 SC-70 Si1900DL-T1-E3 Si1900DL-T1-GE3 11-Mar-11

    Si1900DL

    Abstract: No abstract text available
    Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original     		PDF Si1900DL OT-363 SC-70 S-02367--Rev. 23-Oct-00

    marking WE SC70-6

    Abstract: S101-05 marking G2
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1900DL 2002/95/EC OT-363 SC-70 Si1900DL-T1-E3 Si1900DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. marking WE SC70-6 S101-05 marking G2

    Si1900DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1900DL capa13 28-Jul-00

    Si1900DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1900DL S-50232Rev. 28-Feb-05

    Untitled

    Abstract: No abstract text available
    Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code


    Original     		PDF Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51075--Rev. 13-Jun-05

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    T01A transistor

    Abstract: UNR221200L GRM31CR70J106KA01 philips 3f3 ferrite toroid crcw0603100rj T01A FET l01b sot-363 3f3 core SPDT stacked FET UNR211300L
    Text: Si9122 Vishay Siliconix Evaluation Board for the Vishay Siliconix Si9122 Half-Bridge DCDC Controller IC with Primary-Side Synchronous Rectifier Control INTRODUCTION The Si9122 Evaluation Board "Eval Board" demonstrates the Vishay Siliconix Si9122 controller in a typical DC-to-DC converter application. The module is


    Original     		PDF Si9122 Si9122 10-layer 17-Nov-05 T01A transistor UNR221200L GRM31CR70J106KA01 philips 3f3 ferrite toroid crcw0603100rj T01A FET l01b sot-363 3f3 core SPDT stacked FET UNR211300L

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    Si2343DS

    Abstract: bq2431x bq24080 bq24081 bq24100 Si1900DL SLUA376 BQ24100RHL
    Text: Application Report SLUA437A – September 2007 – Revised September 2009 Extending Single Input Charger to Dual Input Applications Mao Ye. PMP - Portable Power


    Original     		PDF SLUA437A bq24080 bq243xx bq24100 Si2343DS bq2431x bq24081 Si1900DL SLUA376 BQ24100RHL