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    SBE ENCAPSULATED SERIES Search Results

    SBE ENCAPSULATED SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    9004FM/B Rochester Electronics LLC 9004 - NAND Gate, 9004 Series Visit Rochester Electronics LLC Buy
    100183FC Rochester Electronics LLC Multiplier, 100K Series, 8-Bit, ECL, CQFP24, CERPAK-24 Visit Rochester Electronics LLC Buy
    74AC521SC REEL Rochester Electronics LLC 74AC521 - Identity Comparator, AC Series, 8-Bit, Inverted Output, CMOS Visit Rochester Electronics LLC Buy
    MM74HC4538M-G Rochester Electronics LLC 74HC4538 - Monostable Multivibrator, HC/UH Series, 2-Func, CMOS Visit Rochester Electronics LLC Buy

    SBE ENCAPSULATED SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SBE Encapsulated Series

    Abstract: encapsulated E77014 voltage transformer 3.3 volt E1000WB Transformer 500 volt to 60 volt E050 E500JN SBE 461 E100J
    Text: 5 Industrial Control Transformers The SBE - Encapsulated Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance


    Original     		PDF E050JN E100JN E150JN E250JN E500JN 10/NA 54/NA E77014 SBE Encapsulated Series encapsulated E77014 voltage transformer 3.3 volt E1000WB Transformer 500 volt to 60 volt E050 SBE 461 E100J

    E100JN

    Abstract: E500EWB E050W E1000WB
    Text: 5 Industrial Control Transformers The SBE - Encapsulated Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance of


    Original     		PDF

    E050EWB

    Abstract: E1000WB E500JN E075 E500WB
    Text: 4 Industrial Control Transformers The SBE - Encapsulated, Copper Wound Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance of


    Original     		PDF

    E050E

    Abstract: E150TF 277 volt glass fuse 380 volt
    Text: 1020-2012:QuarkCatalogTempNew 8/28/12 2:02 PM Page 1020 11 TEST & MEASUREMENT 120 x 240 Volt Primary, 24 Volt Secondary TRANSFORMERS ENCLOSURES Encapsulated Industrial Control Transformers — SBE Series INTERCONNECT Industrial Control Transformers C ᭤


    Original     		PDF E050TH E500TH E750TH CE750MC CE1000MC CE1500MC E050E E150TF 277 volt glass fuse 380 volt

    E180N

    Abstract: E060CK E180N SBE HS19F500B HS5F7.5AS HS20F500B HS5F5AS Sola/transformer 3000 kVA C1047 E180CK
    Text: Sola/Hevi-Duty General Purpose and Buck Boost Transformers General Purpose Electrical Transformers c Free Shielding c Fast, Easy Installation Single Phase, 10 KVA Ñ 240 ´ 480 Volt Primary, 120/240 Secondary, 60 Hz c UL-3R Enclosures c Highly Versatile Hevi-Duty General Purpose Transformers are the industryÕs workhorses.


    Original     		PDF HS1B50 HS1B100 HS1B150 HS1B250 HS1F500B HS1F750B E1100 E060CK E180CK E380CK E180N E180N SBE HS19F500B HS5F7.5AS HS20F500B HS5F5AS Sola/transformer 3000 kVA C1047

    Untitled

    Abstract: No abstract text available
    Text: SbE D • ^70570 D DD 7D 3ti Eb2 « Z E T B BPW SERIES ZETEX SEMICONDUCTORS SILIC O N PIN PHOTO D IO D ES " F 4 l~ A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection


    OCR Scan     		PDF 7D57fl BPX25, BPX29 ZNP100 ZNP102/3 ZMP31 BPW41D BPW41C/50C

    diode zs104

    Abstract: zs102 diode ZS120
    Text: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS101 ZS102 ZS103 ZS104 ZS106 ZS108 ZS120 ZS121 diode zs104 zs102 diode ZS120

    H2612-12

    Abstract: h261 H2612-10 H2612-8
    Text: MICROSEMI CORP/ MICRO SbE T> • tllS'lD? G O D I M I 70S m n Q L / T-D t-Ô °l MICRO QUALITY / High Voltage Power Rectifier* SEMICONDUCTOR, INC H2612 s e r ie s High Power Avalanche Grade Silicon Epoxy Encapsulated High Purity Epoxy MAXIMUM RATINGS At TA = 2 5 X unless otherwise noted


    OCR Scan     		PDF h2612 H2612-8 H2612-10 H2612-12 H2612-10 300mA H2613 h261

    ZS150

    Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
    Text: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS120 ZS101 ZS102 ZS103 ZS104 ZS106 ZS150 CECC 50001-057 BS9300 ZS151 ZS122

    PH 21 DIODE

    Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
    Text: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o


    OCR Scan     		PDF PLVA400A DO-35 PLVA459A PLVA456A PLVA450A PLVA453A 250MA MLA423 PH 21 DIODE DD40 PLVA453A PLVA462A PLVA465A PLVA468A

    plji

    Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
    Text: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control


    OCR Scan     		PDF BLF241 711Gfl5ti 00M37bfc. MSB009' MBB072-S BLF24Â 0Q43774 plji transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777

    ZNP102

    Abstract: BPX25
    Text: SbE D • ^70576 D D D 7 D 3 7 MTT ■ Z E T B SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF ZETEX PHO TO TRANSISTORS ’T " *4 ^ ^ i Alarm System s, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc.


    OCR Scan     		PDF ZM100/110, BPX25/29) 7D57fl BPX25, BPX29 ZNP100 ZNP102/3 ZMP31 BPW41C/50C ZNP102 BPX25

    SOT123 Package

    Abstract: SOT123 BLF244 International Power Sources SOT-123
    Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability


    OCR Scan     		PDF BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123

    222203028109

    Abstract: IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013
    Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS BLF547 INTERNATIONAL FEATURES SbE 7110fl2b 00414012 flJ3 BIPHIN T> PIN CONFIGURATION 7 - 3 * ? - ¡ S ' • • • • High power gain Easy power control Good thermal stability


    OCR Scan     		PDF BLF547 OT262A2 711Gfl2b T-37-at MBA379 URB012 222203028109 IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013

    uA740

    Abstract: PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S
    Text: Product specification Philips Semiconductors BLF225 VHF power MOS transistor PHILIPS INTERNATIONAL 711005b GG437S7 44G M P H I N 5bE » PIN CONFIGURATION FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. D ESCRIPTIO N


    OCR Scan     		PDF OT123 BLF225 GG437S7 T-31-U OT123 handlinLF225 110fl2b 0437b5 M8A379 uA740 PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S

    Untitled

    Abstract: No abstract text available
    Text: R C D COriPONENTS INC SbE D 74flb34h DOOQHSt, 313 ACTIVE DIGITAL DELAY LINES SERIES A0805 5-TAP 8-PIN DIP .SERIES SA0805 5-TAP 8-PIN SIP ’SERIES A1405 5-TAP 14-PIN DIP SERIES A1410 10-TAP 14-PIN DIP Wide selection of sizes! • ■ ■ ■ ■ ■ Economical cost, prompt delivery!


    OCR Scan     		PDF 74flb34h A0805 SA0805 A1405 14-PIN A1410 10-TAP

    MPA92

    Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
    Text: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability


    OCR Scan     		PDF TBLF245 OT123 -SOT123 711002b BLF245 T-39-11 7110fl2b MPA92 68W* transistor 68w transistor SOT123 Package BH RV transistor International Power Sources P101 sot123 GZ22

    znp100

    Abstract: ZNP102
    Text: 5bE ]> • ^70570 M S SERIES D G D 7 D 3 4 7flD « Z E T B ZETE X s e m i c o n d u c t o r s SILICON M E S A PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use.


    OCR Scan     		PDF 850nm 100nm 7D57fl BPX29 ZNP100 ZNP102/3 ZMP31 BPW41D znp100 ZNP102

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization


    OCR Scan     		PDF BLF221B 7110fl5b paM37Sti MRA910

    pw 2222 a

    Abstract: PHILIPS 4312 amplifier 55.224 BLF346 VCB223
    Text: Philips Semiconductors Product specification VHF power MOS transistor PHILIPS BLF346 INTERNATIONAL FEATURES SbE ]> • 7HGfl2b 0Cm3flqLf ETT PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		PDF BLF346 OT119 VCB223 VCB224- pw 2222 a PHILIPS 4312 amplifier 55.224 BLF346 VCB223

    2222 kn a

    Abstract: 175B BLF277 c17f
    Text: Philips Semiconductors Product specification T -3 1 -tS VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES SbE D • BLF277 711002t. GÜHBÖbb 334 ■ PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability


    OCR Scan     		PDF T-37-Ã BLF277 711002b OT119 2222 kn a 175B BLF277 c17f

    38478

    Abstract: 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A
    Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERN A T I O N A L FEATURES 3 SbE m D 711005 b Ü M 4 0 Q3 BLF546 fi'ìD B I P H I N PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability


    OCR Scan     		PDF OT268 BLF546 00M40Q3 38478 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A

    MEAB29

    Abstract: BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips
    Text: Philips Semiconductora Product «pacification VHF push-pull power MOS transistor T“3 * H 3 PHILIPS INTERNATIONAL FEATURES SbE J> 711GÛ2L, D D M 3 â n BLF245C 51fl « P H I N PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF245C OT161 PINNING-SOT161 MEAB29 BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135