SBE Encapsulated Series
Abstract: encapsulated E77014 voltage transformer 3.3 volt E1000WB Transformer 500 volt to 60 volt E050 E500JN SBE 461 E100J
Text: 5 Industrial Control Transformers The SBE - Encapsulated Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance
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E050JN
E100JN
E150JN
E250JN
E500JN
10/NA
54/NA
E77014
SBE Encapsulated Series
encapsulated
E77014
voltage transformer 3.3 volt
E1000WB
Transformer 500 volt to 60 volt
E050
SBE 461
E100J
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E100JN
Abstract: E500EWB E050W E1000WB
Text: 5 Industrial Control Transformers The SBE - Encapsulated Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance of
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E050EWB
Abstract: E1000WB E500JN E075 E500WB
Text: 4 Industrial Control Transformers The SBE - Encapsulated, Copper Wound Series The SBE Encapsulated industrial control transformers are epoxy encapsulated to seal the transformer windings against moisture, dirt and industrial contaminants. Extra deep, molded terminal barriers reduce the chance of
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E050E
Abstract: E150TF 277 volt glass fuse 380 volt
Text: 1020-2012:QuarkCatalogTempNew 8/28/12 2:02 PM Page 1020 11 TEST & MEASUREMENT 120 x 240 Volt Primary, 24 Volt Secondary TRANSFORMERS ENCLOSURES Encapsulated Industrial Control Transformers — SBE Series INTERCONNECT Industrial Control Transformers C ᭤
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E050TH
E500TH
E750TH
CE750MC
CE1000MC
CE1500MC
E050E
E150TF
277 volt glass fuse
380 volt
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E180N
Abstract: E060CK E180N SBE HS19F500B HS5F7.5AS HS20F500B HS5F5AS Sola/transformer 3000 kVA C1047 E180CK
Text: Sola/Hevi-Duty General Purpose and Buck Boost Transformers General Purpose Electrical Transformers c Free Shielding c Fast, Easy Installation Single Phase, 10 KVA Ñ 240 ´ 480 Volt Primary, 120/240 Secondary, 60 Hz c UL-3R Enclosures c Highly Versatile Hevi-Duty General Purpose Transformers are the industryÕs workhorses.
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HS1B50
HS1B100
HS1B150
HS1B250
HS1F500B
HS1F750B
E1100
E060CK
E180CK
E380CK
E180N
E180N SBE
HS19F500B
HS5F7.5AS
HS20F500B
HS5F5AS
Sola/transformer 3000 kVA
C1047
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PDF
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Untitled
Abstract: No abstract text available
Text: SbE D • ^70570 D DD 7D 3ti Eb2 « Z E T B BPW SERIES ZETEX SEMICONDUCTORS SILIC O N PIN PHOTO D IO D ES " F 4 l~ A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection
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7D57fl
BPX25,
BPX29
ZNP100
ZNP102/3
ZMP31
BPW41D
BPW41C/50C
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diode zs104
Abstract: zs102 diode ZS120
Text: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to
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OCR Scan
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G007027
ZS100
ZS101
ZS102
ZS103
ZS104
ZS106
ZS108
ZS120
ZS121
diode zs104
zs102 diode
ZS120
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H2612-12
Abstract: h261 H2612-10 H2612-8
Text: MICROSEMI CORP/ MICRO SbE T> • tllS'lD? G O D I M I 70S m n Q L / T-D t-Ô °l MICRO QUALITY / High Voltage Power Rectifier* SEMICONDUCTOR, INC H2612 s e r ie s High Power Avalanche Grade Silicon Epoxy Encapsulated High Purity Epoxy MAXIMUM RATINGS At TA = 2 5 X unless otherwise noted
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OCR Scan
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h2612
H2612-8
H2612-10
H2612-12
H2612-10
300mA
H2613
h261
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PDF
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ZS150
Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
Text: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to
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OCR Scan
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G007027
ZS100
ZS120
ZS101
ZS102
ZS103
ZS104
ZS106
ZS150
CECC 50001-057
BS9300
ZS151
ZS122
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PH 21 DIODE
Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Text: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o
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OCR Scan
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PLVA400A
DO-35
PLVA459A
PLVA456A
PLVA450A
PLVA453A
250MA
MLA423
PH 21 DIODE
DD40
PLVA453A
PLVA462A
PLVA465A
PLVA468A
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PDF
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plji
Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
Text: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control
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BLF241
711Gfl5ti
00M37bfc.
MSB009'
MBB072-S
BLF24Â
0Q43774
plji
transistor C4 016
LM 2222
2222 kn a
2222-581
AI 757
BLF241
UBB777
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PDF
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ZNP102
Abstract: BPX25
Text: SbE D • ^70576 D D D 7 D 3 7 MTT ■ Z E T B SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF ZETEX PHO TO TRANSISTORS ’T " *4 ^ ^ i Alarm System s, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc.
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ZM100/110,
BPX25/29)
7D57fl
BPX25,
BPX29
ZNP100
ZNP102/3
ZMP31
BPW41C/50C
ZNP102
BPX25
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PDF
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SOT123 Package
Abstract: SOT123 BLF244 International Power Sources SOT-123
Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability
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OCR Scan
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BLF244
711002b
OT123
7110fi5b
T-39-11
SOT123 Package
SOT123
BLF244
International Power Sources
SOT-123
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PDF
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222203028109
Abstract: IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013
Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS BLF547 INTERNATIONAL FEATURES SbE 7110fl2b 00414012 flJ3 BIPHIN T> PIN CONFIGURATION 7 - 3 * ? - ¡ S ' • • • • High power gain Easy power control Good thermal stability
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BLF547
OT262A2
711Gfl2b
T-37-at
MBA379
URB012
222203028109
IR802
transistor PH7n
vogt
44t transistor
2222 kn a
ceramic trimmer capacitor
International Power Sources
ph7n
tl 4013
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PDF
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uA740
Abstract: PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S
Text: Product specification Philips Semiconductors BLF225 VHF power MOS transistor PHILIPS INTERNATIONAL 711005b GG437S7 44G M P H I N 5bE » PIN CONFIGURATION FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. D ESCRIPTIO N
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OCR Scan
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OT123
BLF225
GG437S7
T-31-U
OT123
handlinLF225
110fl2b
0437b5
M8A379
uA740
PHILIPS OQ 2222
SOT123 Package
UA740 8 pin
capacitor polyester philips
2222 311 capacitor philips
International Power Sources
philips Trimmer 60 pf
sot123
437S
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Untitled
Abstract: No abstract text available
Text: R C D COriPONENTS INC SbE D 74flb34h DOOQHSt, 313 ACTIVE DIGITAL DELAY LINES SERIES A0805 5-TAP 8-PIN DIP .SERIES SA0805 5-TAP 8-PIN SIP ’SERIES A1405 5-TAP 14-PIN DIP SERIES A1410 10-TAP 14-PIN DIP Wide selection of sizes! • ■ ■ ■ ■ ■ Economical cost, prompt delivery!
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OCR Scan
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74flb34h
A0805
SA0805
A1405
14-PIN
A1410
10-TAP
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PDF
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MPA92
Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Text: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability
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TBLF245
OT123
-SOT123
711002b
BLF245
T-39-11
7110fl2b
MPA92
68W* transistor
68w transistor
SOT123 Package
BH RV transistor
International Power Sources
P101
sot123
GZ22
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PDF
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znp100
Abstract: ZNP102
Text: 5bE ]> • ^70570 M S SERIES D G D 7 D 3 4 7flD « Z E T B ZETE X s e m i c o n d u c t o r s SILICON M E S A PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use.
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OCR Scan
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850nm
100nm
7D57fl
BPX29
ZNP100
ZNP102/3
ZMP31
BPW41D
znp100
ZNP102
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization
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OCR Scan
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BLF221B
7110fl5b
paM37Sti
MRA910
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PDF
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pw 2222 a
Abstract: PHILIPS 4312 amplifier 55.224 BLF346 VCB223
Text: Philips Semiconductors Product specification VHF power MOS transistor PHILIPS BLF346 INTERNATIONAL FEATURES SbE ]> • 7HGfl2b 0Cm3flqLf ETT PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF346
OT119
VCB223
VCB224-
pw 2222 a
PHILIPS 4312 amplifier
55.224
BLF346
VCB223
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PDF
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2222 kn a
Abstract: 175B BLF277 c17f
Text: Philips Semiconductors Product specification T -3 1 -tS VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES SbE D • BLF277 711002t. GÜHBÖbb 334 ■ PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability
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OCR Scan
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T-37-Ã
BLF277
711002b
OT119
2222 kn a
175B
BLF277
c17f
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PDF
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38478
Abstract: 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A
Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERN A T I O N A L FEATURES 3 SbE m D 711005 b Ü M 4 0 Q3 BLF546 fi'ìD B I P H I N PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability
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OT268
BLF546
00M40Q3
38478
2222 372
Philips 2222 344 capacitors
International Power Sources
Philips 2222 372 capacitor
BLF546
2322 151
12x3
727 Transistor power values
GP 24A
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PDF
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MEAB29
Abstract: BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips
Text: Philips Semiconductora Product «pacification VHF push-pull power MOS transistor T“3 * H 3 PHILIPS INTERNATIONAL FEATURES SbE J> 711GÛ2L, D D M 3 â n BLF245C 51fl « P H I N PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability
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BLF245C
OT161
PINNING-SOT161
MEAB29
BLF245C
philips power CAPACITOR 111
philips power CAPACITOR 157
2322 156 philips
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2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bM27414
QDDB354
T3V-23
NE021
2SC2570
2sc2570 transistor
transistor 2sc2570
NE02103
NE02133
2sc1560
ic 2SC2570
NE02132
NE02100
NE02135
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