Untitled
Abstract: No abstract text available
Text: BLF245C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85# Minimum Operating Temp (øC)
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BLF245C
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BLF245C
Abstract: "RF Power"
Text: BLF245C RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range. PACKAGE STYLE .400 8L FLG C D A B F U LL R G FEATURES INCLUDE: O F E .1925 • PG = 16 dB Typical at 175 MHz
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BLF245C
BLF245C
"RF Power"
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Philips TdA3619
Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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MEAB29
Abstract: BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips
Text: Philips Semiconductora Product «pacification VHF push-pull power MOS transistor T“3 * H 3 PHILIPS INTERNATIONAL FEATURES SbE J> 711GÛ2L, D D M 3 â n BLF245C 51fl « P H I N PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability
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OCR Scan
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BLF245C
OT161
PINNING-SOT161
MEAB29
BLF245C
philips power CAPACITOR 111
philips power CAPACITOR 157
2322 156 philips
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C23T
Abstract: transistor T43 tag l9 transistor BLF245C
Text: Philips Semiconductors OOETT?! 525 A P X Product specification VHF push-pull power MOS transistor BLF245C N AMER PHILIPS/DISCRETE FEATURES bTE T> PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF245C
OT161
-SOT161
MBA379
ARA92S
C23T
transistor T43
tag l9 transistor
BLF245C
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Untitled
Abstract: No abstract text available
Text: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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OCR Scan
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bb53T31
BLF245C
OT161
-SOT161
MRA326
RA92S
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Untitled
Abstract: No abstract text available
Text: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121
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OT123
OT121
BLF145
BLF175
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