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    SAMSUNG LRA Search Results

    SAMSUNG LRA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DRV2625YFFR Texas Instruments Advanced ERM & LRA Haptics Driver with Smart Loop and Embedded Effects Library 9-DSBGA -40 to 85 Visit Texas Instruments Buy
    DRV2625YFFT Texas Instruments Advanced ERM & LRA Haptics Driver with Smart Loop and Embedded Effects Library 9-DSBGA -40 to 85 Visit Texas Instruments Buy
    DRV2605YZFT Texas Instruments Haptic Driver for ERM/LRA with Built-In Library and Smart Loop Architecture 9-DSBGA -40 to 85 Visit Texas Instruments Buy
    DRV2605YZFR Texas Instruments Haptic Driver for ERM/LRA with Built-In Library and Smart Loop Architecture 9-DSBGA -40 to 85 Visit Texas Instruments Buy
    DRV2604YZFT Texas Instruments Haptic Driver for ERM/LRA with Waveform Memory and Smart Loop Architecture 9-DSBGA -40 to 85 Visit Texas Instruments Buy

    SAMSUNG LRA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as


    Original     		PDF K4S510832B 512Mbit

    K4S510832C

    Abstract: K4S510832 K4S510832C-KL
    Text: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as


    Original     		PDF K4S510832C 512Mbit K4S510832C K4S510832 K4S510832C-KL

    K4S511632C

    Abstract: No abstract text available
    Text: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S511632C 512Mbit 16bit K4S511632C

    K4S511632D

    Abstract: No abstract text available
    Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S511632D 512Mbit 16bit K4S511632D

    Untitled

    Abstract: No abstract text available
    Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S510832B 512Mbit

    S3C2442

    Abstract: sc32442 Samsung SC32442 S3C2442B SC32442B SC32442A ARM samsung sc32442B SC32442X SC32442B Users Manual sc32442 PROGRAMMING
    Text: SC32442B USER’S MANUAL Revision 1.2 NOTIFICATION OF REVISIONS ORIGINATOR: Samsung Electronics, SOC Development Group, Ki-Heung, South Korea PRODUCT NAME: SC32442B RISC Microcontroller DOCUMENT NAME: SC32442B User's Manual, Revision 1.2 DOCUMENT NUMBER: EFFECTIVE DATE:


    Original     		PDF SC32442B SC32442B 332-FBGA-SC32442B 332-FBGA S3C2442 sc32442 Samsung SC32442 S3C2442B SC32442A ARM samsung sc32442B SC32442X SC32442B Users Manual sc32442 PROGRAMMING

    K4H511638J

    Abstract: K4H510838J K4H510838J-LC K4H511638J-BC K4H511638J-LC K4H510438J K4H511638JLC
    Text: Rev. 1.1, Feb. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K4H510438J K4H510838J K4H511638J 512Mb 60FBGA 66TSOP- K4H511638J K4H510838J-LC K4H511638J-BC K4H511638J-LC K4H511638JLC

    K4H510838J

    Abstract: K4H511638J
    Text: Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K4H510438J K4H510838J K4H511638J 512Mb 60FBGA 66TSOP- K4H511638J

    K4S560432C

    Abstract: RA12
    Text: K4S560432C CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S560432C CMOS SDRAM Revision History


    Original     		PDF K4S560432C 256Mbit 100MHz 10/AP K4S560432C RA12

    K4S281632I

    Abstract: K4S280832I k4s281632 8Mb x 16 K4S280432i
    Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S280432I K4S280832I K4S281632I 128Mb A10/AP K4S281632I K4S280832I k4s281632 8Mb x 16 K4S280432i

    KM416S8030B

    Abstract: No abstract text available
    Text: KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM Revision History


    Original     		PDF KM416S8030B 128Mbit 16Bit A10/AP KM416S8030B

    K4S561632C-TC/L75

    Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C

    KM416S16230

    Abstract: No abstract text available
    Text: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM416S16230A CMOS SDRAM Revision History


    Original     		PDF KM416S16230A 256Mbit 16bit A10/AP KM416S16230

    SAMSUNG TL1L

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM K4S510432M 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510432M Preliminary CMOS SDRAM


    Original     		PDF K4S510432M 512Mbit K4S510432M A10/AP SAMSUNG TL1L

    K4S281632I-UC75

    Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
    Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S280432I K4S280832I K4S281632I 128Mb 215KB K4S281632I-TC75 K4S281632I-UC60 K4S281632I-UC75 K4S281632I-UI75 K4S281632I-UL75 K4S281632I 8MB SDRAM 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75

    K4S511632M

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM


    Original     		PDF K4S511632M 512Mbit 16bit K4S511632M A10/AP

    K4S510832M

    Abstract: RA12
    Text: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM


    Original     		PDF K4S510832M 512Mbit K4S510832M A10/AP RA12

    Untitled

    Abstract: No abstract text available
    Text: K4S281632D CMOS SDRAM 128Mbit SDRAM 3.3V - Super Low Power 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Oct. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Oct. 2001 K4S281632D CMOS SDRAM


    Original     		PDF K4S281632D 128Mbit 16Bit K4S281632D A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S281632D CMOS SDRAM 128Mbit SDRAM Extended Temp Support 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM


    Original     		PDF K4S281632D 128Mbit 16Bit 100MHz A10/AP

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF GG1472D KMM532512W/WG KMM532512W 40-pin 72-pin 22jiF 130ns 150ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • TTbHlMS DD1SSSL 3bT KM44C258C SHGK CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF KM44C258C 144x4 KM44C258C 110ns KM44C258C-7 130ns KM44C258C-8 150ns 20-LEAD

    memory samsung

    Abstract: No abstract text available
    Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


    OCR Scan     		PDF KMM411024/KMM511024 KMM41102 5/KMM511025 KMM411024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 memory samsung

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


    OCR Scan     		PDF KMM411024/KMM511024 KMM411025/KMM511025 4U024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 KMM411025

    8 pin ic lm 745

    Abstract: No abstract text available
    Text: KMM411024/KMM511024 Ï? ? SAM SUNG KMM411025/KMM511025_ M Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025,


    OCR Scan     		PDF KMM411024/KMM511024 KMM411025/KMM511025_ KMM411024, KMM411025, KMM511024 KMM511025, 18-pin KMM411024 KMM411025 8 pin ic lm 745