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    SAMSUNG CMOS DRAM 4M X 4 Search Results

    SAMSUNG CMOS DRAM 4M X 4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC74HC14AF Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHCT541AFT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC14D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHC541FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC04D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG CMOS DRAM 4M X 4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KMM5364100-7

    Abstract: Ras 1220
    Text: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit


    OCR Scan     		KMM5364100/G KMM5364100 24-pin 20-pin 72-pin KMM5364100-6 KMM5364100-7 KMM5354100-8 Ras 1220 PDF

    KM41C4000A

    Abstract: No abstract text available
    Text: KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584020A consist o f eight KM41C4000ALJ DRAMs


    OCR Scan     		KMM584020A KMM584020A KM41C4000ALJ 20-pin 30-pin 22/xF M584020A-7 KM41C4000A PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5334100A/AG Fast Page Mode 4M x33 DRAM SIM M , 2K Refresh , 5V x / Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5334100A is a 4M bit x 33 Dynamic RAM high density memory module. The Samsung KMM5334100A consists of eight CMOS


    OCR Scan     		KMM5334100A/AG KMM5334100A 24-pin 20-pin 72-pin PDF

    K4S640432C

    Abstract: No abstract text available
    Text: K4S640432C CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S640432C CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432C 64Mbit A10/AP K4S640432C PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432E 64Mbit A10/AP PDF

    K4S280832D

    Abstract: No abstract text available
    Text: K4S280832D CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280832D CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832D 128Mbit K4S280832D A10/AP PDF

    K4S280832M

    Abstract: No abstract text available
    Text: K4S280832M CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832M CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832M 128Mbit K4S280832M A10/AP PDF

    K4S280832B

    Abstract: No abstract text available
    Text: K4S280832B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832B CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832B 128Mbit K4S280832B A10/AP PDF

    K4S640432D

    Abstract: No abstract text available
    Text: K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S640432D CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432D 64Mbit 64mactive A10/AP K4S640432D PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432E 64Mbit 64active A10/AP PDF

    K4S561632A

    Abstract: No abstract text available
    Text: K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S561632A 256Mbit 16bit K4S561632A A10/AP PDF

    K4S280832A

    Abstract: No abstract text available
    Text: K4S280832A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832A CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832A 128Mbit K4S280832A A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5324000AKV/AKVG Fast Page Mode 4M x32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM5324000AKV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AKV consists of eight CMOS


    OCR Scan     		KMM5324000AKV/AKVG KMM5324000AKV 24-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM594000 DRAM MODULES 4M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000 Is a 4M b i t x 9 Dynamic RAM high density memory module. The Samsung KMM594000 consist of nine KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		KMM594000 KMM594000-8 KMM594000-10 100ns 150ns 180ns KMM594000 KM41C4000J 20-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E404BS KMM372E404BK/BS EDO Mode 4M x 72 DRAM DIMM Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAM in


    OCR Scan     		KMM372E404BK/BS 4Mx16 KMM372E404B 4Mx72bits 4Mx16bits 400mil 168-pin KMM372E404BS PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS


    OCR Scan     		KMM53641OOAH 4Mx36 KMM5364100AH 24-pin 72-pin PDF

    KMM594100AN

    Abstract: 44C4100 KMM5941 O1040 4Mx1 44C4100AJ
    Text: DRAM MODULE / 4 Mega Byte KMM594100AN Fast Page Mode 4Mx9 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AN consists of two CMOS


    OCR Scan     		KMM594100AN 24-pin 20-pin 30-pin 44C4100 KMM5941 O1040 4Mx1 44C4100AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5394000AM Fast Page Mode 4Mx39 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package / GENERAL DESCRIPTION FEATURES The Samsung KMM5394000AM is a 4M bit x 39 Dynamic RAM high density memory module. The Samsung KMM5394000AM consists of ten CMOS


    OCR Scan     		KMM5394000AM 4Mx39 24-pin 72-pin PDF

    KM41C4000A

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • 7 ^ 4 1 4 2 00144^4 031 « S A C K KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM584000A KMM584000A KM41C4000AJ 20-pin 30-pin KMM584000A- 130ns 150ns KM41C4000A PDF

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    Original     		KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM584000B KMM584000B KM41C4000BJ 20-pin 30-pin 22/iF KMM584000B-6 110ns M584000B-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    OCR Scan     		KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits 4Mx16bits 72-pin KMM5364005BSW PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364V400AK/AS KMM364V400AK/AS Fast Page Mode 4Mx64 DRAM DIMM, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V400A is a 4M bit x 64 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM364V400A consists of sixteen CMOS


    OCR Scan     		KMM364V400AK/AS KMM364V400AK/AS 4Mx64 KMM364V400A 300mil cycles/64ms 1000mil) KM44V4000AK, PDF

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    Original     		KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG PDF