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    SAMSUNG CAPACITANCE MANUFACTURING LOCATION Search Results

    SAMSUNG CAPACITANCE MANUFACTURING LOCATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SAMSUNG CAPACITANCE MANUFACTURING LOCATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung capacitance Manufacturing location

    Abstract: No abstract text available
    Text: PC100/PC133 µSODIMM M463S3254CK1 32Mx64 SDRAM µSODIMM Revision 0.2 Sept. 2001 Rev. 0.2 Sept. 2001 M463S3254CK1 PC100/PC133 µSODIMM Revision History Revision 0.0 July 2001 • First published. Revision 0.1 (Aug. 2001) • SPD correction Revision 0.2 (Sept. 2001)


    Original     		PDF PC100/PC133 M463S3254CK1 32Mx64 100MHz M463Sm samsung capacitance Manufacturing location

    M463S1654CT1-L7A

    Abstract: K4S561632C M463S1654CT1 COMMAND K4S561632C-TC k4s561632 date code samsung capacitors samsung capacitance year code
    Text: PC100/PC133 µSODIMM M463S1654CT1 16Mx64 SDRAM µSODIMM Revision 0.1 Sept. 2001 Rev. 0.1 Sept. 2001 M463S1654CT1 PC100/PC133 µSODIMM Revision History Revision 0.0 Aug. 2001, Preliminary • First published. Revision 0.1 (Sept. 2001) • Reduced IDD1/4 in DC Characteristics.


    Original     		PDF PC100/PC133 M463S1654CT1 16Mx64 100MHz M463S1654CT1 M463S1654CT1-L7A K4S561632C COMMAND K4S561632C-TC k4s561632 date code samsung capacitors samsung capacitance year code

    KMM466S104CT-F0

    Abstract: KM416S1020CT-F10
    Text: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.


    Original     		PDF KMM466S104CT 144pin 200mV. 2K/32ms 4K/64ms. KMM466S104CT 1Mx64 1Mx16, KMM466S104CT-F0 KM416S1020CT-F10

    CDC2509

    Abstract: samsung capacitance year code
    Text: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.


    Original     		PDF M377S0823ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. 100MHz samsung capacitance year code

    KMM466S924T-F0

    Abstract: No abstract text available
    Text: Preliminary 144pin SDRAM SODIMM KMM466S924T KMM466S924T SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S924T is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF 144pin KMM466S924T KMM466S924T 8Mx64 8Mx16, 400mil 144-pin KMM466S924T-F0

    KM48S16030T-F10

    Abstract: KMM466S1723T-F0
    Text: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6 ) is changed. REV. 2 April '98 Preliminary 144pin SDRAM SODIMM KMM466S1723T2 KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM466S1723T2 144pin KMM466S1723T 16Mx64 16Mx8, 400mil KM48S16030T-F10 KMM466S1723T-F0

    CDC2509

    Abstract: samsung capacitance Manufacturing location ALVC162835 CDCF2509 M377S1620ET3 samsung capacitance year code
    Text: M377S1620ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.


    Original     		PDF M377S1620ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. 100MHz samsung capacitance Manufacturing location CDCF2509 M377S1620ET3 samsung capacitance year code

    KM48S8030BT-G10

    Abstract: KM48S8030BT KM48S8030BT-G
    Text: KMM374S823BTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM374S823BTL 200mV. 66MHz KM48S8030BT-G10 KM48S8030BT KM48S8030BT-G

    KM48S2020CT-G10

    Abstract: KMM374S403CTL-G0
    Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM374S403CTL 200mV. KMM374S403CTL 4Mx72 66MHz KM48S2020CT-G10 KMM374S403CTL-G0

    KM48S2020CT-F10

    Abstract: KMM466S203CT-F0 KM48S2020
    Text: KMM466S203CT 144pin SDRAM SODIMM Revision History Revision . 2 Mar. 1998 •Some Parameter values & Charcteristeristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM466S203CT 144pin 200mV. KMM466S203CT 2Mx64 66MHz KM48S2020CT-F10 KMM466S203CT-F0 KM48S2020

    KMM366S204CTL-G0

    Abstract: No abstract text available
    Text: KMM366S204CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S204CTL 200mV. 2K/32ms 4K/64ms. KMM366S204CTL 2Mx64 1Mx16, 66MHz KMM366S204CTL-G0

    KM416S4030BT-F10

    Abstract: KMM466S824BT2
    Text: KMM466S824BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.


    Original     		PDF KMM466S824BT2 144pin 66MHz KM416S4030BT-F10 KMM466S824BT2

    KM416S4020

    Abstract: KM416S4020BT-G10
    Text: KMM366S804BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S804BTL 200mV. 66MHz KM416S4020 KM416S4020BT-G10

    KM48S8020

    Abstract: KMM366S1603BTL-G0
    Text: KMM366S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S1603BTL 200mV. 66MHz KM48S8020 KMM366S1603BTL-G0

    KM48S2020CT-G10

    Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 66MHz KM48S2020CT-G10 KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G

    PC133 133Mhz cl3

    Abstract: intel date code format
    Text: PC100/PC133 µSODIMM M463S3254DK1 M463S3254DK1 SDRAM µ SODIMM 32Mx64 SDRAM µSODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S3254DK1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100/PC133 M463S3254DK1 M463S3254DK1 32Mx64 32Mx16, 400mil 144-pin PC133 133Mhz cl3 intel date code format

    KMM466S1724T-F0

    Abstract: No abstract text available
    Text: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6 ) is changed. REV. 2 April '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM466S1724T2 144pin KMM466S1724T 16Mx64 8Mx16, 400mil KMM466S1724T-F0

    KMM366S104CTL-G0

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 66MHz KMM366S104CTL-G0

    Untitled

    Abstract: No abstract text available
    Text: KMM374S803BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.


    Original     		PDF KMM374S803BTL 200mV. 66MHz

    M464S1654DTS

    Abstract: k4s561632d-tl7
    Text: M464S1654DTS PC133/PC100 SODIMM M464S1654DTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1654DTS consists of four CMOS 16M x 16 bit with


    Original     		PDF M464S1654DTS PC133/PC100 M464S1654DTS 16Mx64 16Mx16, 400mil 144-pin k4s561632d-tl7

    M464S3254DTS

    Abstract: k4s561632d-tl7
    Text: PC133/PC100 SODIMM M464S3254DTS M464S3254DTS SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M464S3254DTS M464S3254DTS 32Mx64 16Mx16, 400mil 144-pin k4s561632d-tl7

    K4S561632D-T

    Abstract: No abstract text available
    Text: PC100/PC133 µSODIMM M463S1654DT1 M463S1654DT1 SDRAM µ SODIMM 16Mx64 SDRAM µSODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S1654DT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M463S1654DT1 consists of four CMOS 16M x 16 bit with


    Original     		PDF PC100/PC133 M463S1654DT1 M463S1654DT1 16Mx64 16Mx16, 400mil 144-pin K4S561632D-T

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 SODIMM M464S3254CTS M464S3254CTS SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254CTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M464S3254CTS M464S3254CTS 32Mx64 16Mx16, 400mil 144-pin

    KM48S8030BT-F10

    Abstract: KMM466S823BT2-F0 KMM466S823BT2
    Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.


    Original     		PDF KMM466S823BT2 144pin 66MHz KM48S8030BT-F10 KMM466S823BT2-F0 KMM466S823BT2